Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5SMH-3 HIGH-SPEED SWITCHING USE FS5SMH-3 OUTLINE DRAWING Dimensions in mm 4 .5 15 .9 M A X . / 3.2 w * 5 .4 5 0.6 o , 2.5V DRIVE V d s s . 150V rD S O N ( M A X ) . 0.35Î2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH1 S64CXJJ-12,-15 67108864-B IT 1048576-W Q RD BY 64-BIT SynchronousDRAM DESCRIPTION The MH1S64CXJJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four industry standard 1Mx16 Synchronous DRAMs in
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S64CXJJ-12
67108864-B
048576-W
64-BIT
MH1S64CXJJ
1048576-word
64-bit
1Mx16
83MHz
67MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is SRAM MODULE 64K X 32 STATIC RAM 2 BIT M a x. Access T y p e na m e Load m em o ry tim e O u tw a rd dim en sio ns D a ta sheet W x H x D (m m ) page (n s ) MH6432NZ-15 15 MH6432NZ-20 20 MH6432NZ-25 25 MH6432NZ-35 35 MH6432NZ-20L 20 MH6432NZ-25L
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MH6432NZ-15
MH6432NZ-20
MH6432NZ-25
MH6432NZ-35
MH6432NZ-20L
MH6432NZ-25L
MH6432NZ-35L
5258B
MH6432NZ-15,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH6404AD1-15 2 6 2 1 4 4 -B IT 6 5 536-W O RD B Y 4-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 6 4 0 4 A D 1 is 65 5 3 6 -w o rd x 4 b it d y n a m ic R A M and consists o f fo u r in d u s try standard 64 K x 1 d y n a m ic R AM s
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MH6404AD1-15
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M H 12808T N A-85,-IO ,-12,-15 1 0 4 8 5 7 6 -B IT 1 3 1 0 7 2 -W 0 RD BY 8 -B IT C M O S STATIC RAM DESCRIPTION The M H 1 2 8 0 8 T N A is a 1 0 4 8 5 7 6 -b its C M OS static R A M PIN CONFIGURATION (TOP VIEW) module organized as 13 1072-w o rd s by 8 -b its . It consists
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1072-w
I2808T
32-pin
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K4164
Abstract: 5k4164 block stsu 536-WORD RAC120 M5K4116P msk4164 M5K4164AND-12 M5K4164AND-15 K4164A
Text: M ITSU B ISH I L S Is M5K4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b ric a te d w ith the high pe rform ance N-channel silicongate
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M5K4164AND-12,
536-BIT
536-WORD
18-pin
M5K4164AND
K4164
5k4164
block stsu
RAC120
M5K4116P
msk4164
M5K4164AND-12
M5K4164AND-15
K4164A
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M5M5178BP
Abstract: A7TA
Text: MITSUBISHI LS Is M5M5178BP, J,FP-15,-20 M5M5178BVP-20 65536-BIT 8192-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This is a fam ily of 8 1 9 2 -w o rd by 8 -b it static RAM s, PIN CONFIGURATION (TOP VIEW) fabricated w ith the high-performance CMOS silicon-gate MOS
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M5M5178BP,
FP-15
M5M5178BVP-20
65536-BIT
8192-WORD
5178BP,
VP-20
M5M5178BP
A7TA
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M5K4164AL-12
Abstract: M5K4164AL-15 CSH120 M5K4164
Text: M ITSUBISHI L SIs M5K4164AL-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1 -b it d y n a m ic RAM s, fa b ric a te d w ith th e high p e rfo rm a n ce N -channel silicongate
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M5K4164AL-12,
536-BIT
536-WORD
16-pin
M5K4164AL
M5K4164AL-12
M5K4164AL-15
CSH120
M5K4164
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U2829
Abstract: m5m4256 30n5
Text: MITSUBISHI LSIs MH25609J-85,-10,-12,-15/ MH25609JA-85,-10,-12,-15 PAGE MODE 262144-W ORD BY 9-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M H 2 5 6 0 9 J , J A is 2 6 2 1 4 4 w o rd x 9 b it d y n a m ic R A M and consists o f nine in d u s try standard 2 5 6 K x 1 d y n a m ic
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MH25609J-85
MH25609JA-85
62144-W
25609J
MH25609J-85,
MH25609JA-85,
U2829
m5m4256
30n5
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M5M4V4169TP20
Abstract: mitsubishi cdram M5M4V4169TP sram 3.3 16bit
Text: MITSUBISHI LSIs M5M4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M 4V4169TP is a 4 M - b it Cached DRAM which integrates input registers, a 262, 1 44-w o rd by 1 6 - bit dynamic memory array and a 1 0 2 4 -word by 1 6 - bit static
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M5M4V4169TP-15
256K-WORD
16-BIT
1024-WORD
4V4169TP
M5M4V4169TP20
mitsubishi cdram
M5M4V4169TP
sram 3.3 16bit
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Untitled
Abstract: No abstract text available
Text: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024
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REV22)
M5M4V16169RT-10
1024K
16-BIT)
024-W
4V16169R
16M-bit
576-word
16-bit
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V4169TP is a 4 M - b it Cached DRAW which integrates input registers, a 262, 1 4 4 - word by 1 6 - bit dynamic memory array and a 1024-w o rd by 1 6 - bit static
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M5M4V4169TP-15
256K-WORD
16-BIT
1024-WORD
M5M4V4169TP
1024-w
4V4169TP-15
4V4169TP-20
D054772
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MH12808TNA-10
Abstract: MH12808TNA-12 DG2B
Text: MITSUBISHI LSIs {SRAM MODULE MH12808TNA-85,-10,-12,-15/ MH12808TNA-85H,-10H,-12H,-15H 1048576-BIT 131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Both side] The M H 12 808 T N A is a 1 0 4 8 5 7 6 -bits CMOS static RAM module organized as 13 1072 -w o rd s by 8 - bits. It consists
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MH12808TNA-85
MH12808TNA-85H
1048576-BIT
131072-WORD
100ns
120ns
150ns
12808TN
12808TNA-10H
MH12808TNA-10
MH12808TNA-12
DG2B
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Untitled
Abstract: No abstract text available
Text: REV22 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169TP is a 16M -bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynam ic m em ory array and a
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REV22)
M5M4V16169TP-10
1024K
16-BIT)
024-W
4V16169TP
576-word
16-bit
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH25616RN A, -15,-2 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 - WORD BY 1 6-B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 1 6 R N A is 262144-w o rd x 16-bit EPROM and 'v , consists o f four industry standard 128K x 8 EPROMs and
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MH25616RN
262144-w
16-bit
150ns
200ns
250ns
MH25616RNA,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH51208UNA-85,-10,-12,-15,-85L,-10L,-12L,-15L 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM MODULE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 5 1 2 0 8 U N A is a 4 1 9 4 3 0 4 bits CM O S static RAM m odule organized as 5 2 4 2 8 8 -w o rd s by 8 -b its . It consists
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MH51208UNA-85
4194304-BIT
524288-WORD
32-pin
51208U
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Untitled
Abstract: No abstract text available
Text: ETE D • b^MTfl aS OGISSTO 3 ■ MITSUBISHI LSIs M5M41001AP, J, L-8P-10, -12 T-46-23-15 NIBBLE MODE 1 0 4 8 5 7 6 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 1-BIT DYNAMIC RAM MITSUBISHI DESC RIPTIO N This is a fa m ily o f 1 0 4857 6-w o rd by 1-bit dynam ic RAMs,
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M5M41001AP,
T-46-23-15
41001AP,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Pmhmmarw Some of contents are subject MH2V645DZJJ-5,-6,-7,-5S,-6S,-7S to change without notice. H Y P E R PAGE M O D E 134217728-B IT 2097152-W O R D BY 64-B IT D Y N A M IC RAM DESCRIPTION T he M H 2 V 64 5D Z JJ is 2 0 97 15 2 - w o rd by 64 - bit dyn am ic
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MH2V645DZJJ-5
134217728-B
097152-W
MIT-DS-0229-0
17/Jul
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M5M5178BP
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5178BP,J,FP-15,-20 F 65336-BIT 8192-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 8 1 9 2 w o rd b y 8 -b it static R A M s , fa b r i cated w ith th e high p e rfo rm a n c e C M O S sillicon gate M O S
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M5M5178BP
FP-15
65336-BIT
8192-WORD
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is MH25608S1N-70, -85,-10,-12,-15 2 0 9 7 1 S 2 -B IT 2 6 2 1 4 4 -WORD BY 8-B IT C M O S STATIC RAM MODULE DESCRIPTION The M H 25 608 S 1 N is a 2 0 9 7 1 5 2 bits CMOS static R A M PIN CONFIGURATION (TOP VIEW) module organized as 26 2144 -w o rd s by 8-bits. It consists
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MH25608S1N-70,
35-pin
100ns
120ns
150ns
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M4164
Abstract: No abstract text available
Text: MITSUBISHI LS Is <DRAM MODULE FAST PAGE MODE DYNAMIC RAM 8M X 40 320 M BIT M ax. A ccess Type O u tw a rd Load nam e d im e n s io n s D a ta sheet m e m o ry tim e W X H X D m m ) page 8 6 .2 6 X 2 3 .3 9 X 15 3 /1 9 (n s ) MH8M40AJD-6 * 60 MH8M40AJD-7
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MH8M40AJD-6
MH8M40AJD-7
16400A
335544320-BIT
8388608-WORD
40-BIT)
40-bit
MH8M40AJD
335544320-BfT
M4164
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25608
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH25608S1N-70, -85, -10, -12,-15 2 0 9 7 152-BIT 262144-W O RD BY 8-BIT CMOS STATIC RAM MODULE DESCRIPTION The M H 25 6 0 8S 1 N is a 2 0 9 7 1 5 2 bits C M O S s tatic R A M PIN CONFIGURATION (TOP VIEW) m o d u le organized as 2 6 2 1 4 4 -w o r d s by 8 -b its . I t consists
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MH25608S1N-70,
152-BIT
62144-W
MH25608S1N-70
MH25608S1N-85
25608
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M5M5257CP
Abstract: M5M5257C-35-35L
Text: MITSUBISHI LS Is M5M5257CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 5 M 5 2 5 7 C is a fa m ily o f 2 6 2 1 4 4 -w o rd b y 1-bit s ta tic R A M s, fa b rica te d w ith th e hig h -p erform a n ce CMOS silicongate
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M5M5257CP,
262144-BIT
262144-WORD
M5M5257CP
M5M5257C-35-35L
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51004BP,J-15,-20,-25,-20L,-25L 1048576-BIT 262144-WORD BY 4-BIT CM0S STATIC RAM DESCRIPTION T h e M 5 M 5 1 0 0 4 B P .J a re a fam ily of 2 6 2 1 4 4 -w o rd by 4-b it static PIN CONFIGURATION (TOP VIEW) R A M s , fab ric ate d w ith the high p erfo rm an ce C M O S silicon g a te
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M5M51004BP
1048576-BIT
262144-WORD
28-pin
M5M51004BP,
J-20L,
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