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    NIC Components Corp NSPU154M16TRB4F

    Cap Film 0.15uF 16V 20% (3.2 X 1.6 X 0.8mm) SMD 85°C T/R - Tape and Reel (Alt: NSPU154M16TRB4F)
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    Avnet Americas NSPU154M16TRB4F Reel 3,000
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    NIC Components Corp NSPU224M16TRB4F

    Cap Film 0.22uF 16V 20% (3.2 X 1.6 X 0.8mm) SMD 85°C T/R - Tape and Reel (Alt: NSPU224M16TRB4F)
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    Avnet Americas NSPU224M16TRB4F Reel 3,000
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    Chip1Stop NSPU224M16TRB4F 1,134
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    Ohmite Mfg Co WLRB4F2E

    Planar Resistors - Chassis Mount 8.5 Ohms 8.2A 10% HEXOHM HELICAL WOUND
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    Mouser Electronics WLRB4F2E
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    ABB Low Voltage Products and Systems RB4F

    Fork Terminal Blue
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    Verical RB4F 875 35
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    Arrow Electronics RB4F 900 7 Weeks 1
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    Thomas & Betts RB4F

    Blue Polycarb Insul Fork Terminal |Abb Thomas & Betts RB4F
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    Newark RB4F Bulk 100
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    Onlinecomponents.com RB4F
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    Master Electronics RB4F
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    RB4F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RB4F Sino-American Silicon Products Fast Recovery Bridge Rectifiers Scan PDF

    RB4F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    A12212

    Abstract: 702 sot 23 74284 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 364-pin A12-212 circuit diagram for simple IR robots marking h02 sot 363 RBHB RSB 7900
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF d588-6130 A12212 702 sot 23 74284 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 364-pin A12-212 circuit diagram for simple IR robots marking h02 sot 363 RBHB RSB 7900

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    Untitled

    Abstract: No abstract text available
    Text: Sta-Kon Termination Products Polycarbonate Insulated Fork Terminals Technical Information Material Electrolytic copper Plating Tin-plated Marking Wire size and bolt size stamped on the tongue Metal barrel Brazed seam to prevent barrel separation Insulation


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    PDF RA35F RC10F g/100) ERG2510 ERG2001A WT2124Y

    tcsl 1009

    Abstract: K249 R94S REB 670 RSB 7900 K28F 35954 DMN 43-1 RB4B 223-28
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: RB4-Series High Amperage Illuminated Water Protection High Temperature Front Panel Mount The RB4-Series is the dual actuator version of the RB1-Series. This industry standard 22mm x 30mm rocker switch features crisp and clean actuation as well as various terminal, actuator, and


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    PDF 125VAC 250VAC 500VAC 500VAC 50VAC 125/250V

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
    Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358

    se617

    Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883
    Text: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the


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    PDF A13826EJ7V0DM00 A13826EJ7V0DM se617 vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


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    PDF iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


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    PDF b4E75S5 QQ3T701 nPD658xx bv0T 658X

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


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    PDF 65-MICRON xPD65800 D65806 9215K1

    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


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    PDF

    transistor f422

    Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
    Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high


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    PDF xPD658xx transistor f422 transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    PDF IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425

    SRS22F

    Abstract: RB4F L74B RB6F RB05F RB10F SBR805DF SRS205F SRS210F SRS21F
    Text: S I N O - AMERICAN SILICON F A S T R E C O V E R Y B R ID G E R E C T IFIE R S ~V22-OS OPERATING TEMPERATURE RANGE: -5 5° C to +125°C STORAGE TEMPERATURE RANGE: -5 5 °C to + 150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current Half-Wav»


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    PDF G0DQ031 RB05F SRS28F SRS210F SBR805DF SBR81DF SBR82DF SBR84DF SBR86DF SBR88DF SRS22F RB4F L74B RB6F RB10F SRS205F SRS21F

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


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    PDF jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys

    D65806

    Abstract: No abstract text available
    Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


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    PDF 65-micron D65806

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    PDF IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442

    RB05F

    Abstract: RB10F SBR805DF SRS205F SRS210F SRS21F SRS22F SRS24F SRS26F SRS28F
    Text: SINO-AMERICAN SILICON EME 2? • 020174b □□□□ □3 1 5 ■ F A S T R E C O V E R Y B R ID G E R E C T IF IE R S ~ V 2 2 - O S OPERATING TEM PERATURE RANGE: - 5 5 °C to +125°C STORAGE TEM PERATURE RANGE: - 5 5 °C to + 150°C TYPE Maximum Peak Reverse


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    PDF G0DQ031 RB05F DO-41 350x350x345 DO-15 D0-201AD RB10F SBR805DF SRS205F SRS210F SRS21F SRS22F SRS24F SRS26F SRS28F