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    Vicor Corporation VE-JWB-EW-F2

    DC DC CONVERTER 95V 100W
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    Vicor Corporation VI-J6B-EW-F3

    DC DC CONVERTER 95V 100W
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    Vicor Corporation VI-B1B-EW-F3

    DC DC CONVERTER 95V 100W
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    Vicor Corporation VI-JWB-EW-F3

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    Vicor Corporation VI-B5B-EW-F3

    DC DC CONVERTER 95V 100W
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    BEWF Datasheets Context Search

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    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    2N2222 pinout

    Abstract: 2N2222 2N2222 circuit
    Text: PLED Open LED Protectors PLED5 QFN Series PLED5 QFN Series RoHS Description    *GPOFPGUIF-&%TJOBOBSSBZGBJMTPQFO UIJTEFWJDF 


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    PDF

    T4503

    Abstract: No abstract text available
    Text: PLED Open LED Protectors PLED5HT SOT 89 Series PLED5HT SOT 89 Series  Description    *GPOFPGUIF-&%TJOBOBSSBZGBJMTPQFO UIJTEFWJDF


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    PDF 50QFO-& OT-89 T4503

    2N2222 pinout

    Abstract: sot 163 Package 0 A B C sot-89 KV SOT89 sot 89 89 series 5 LED DRIVER pled5ht
    Text: PLED Open LED Protectors PLED5HT SOT 89 Series PLED5HT SOT 89 Series RoHS Description    *GPOFPGUIF-&%TJOBOBSSBZGBJMTPQFO UIJTEFWJDF 


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    PDF OT-89 OT-89 2N2222 pinout sot 163 Package 0 A B C sot-89 KV SOT89 sot 89 89 series 5 LED DRIVER pled5ht

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    2N2222

    Abstract: 2N2222 circuit Q2 2N2222 MA150A
    Text: PLED Open LED Protectors PLED5 QFN Series PLED5 QFN Series  Description    *GPOFPGUIF-&%TJOBOBSSBZGBJMTPQFO UIJTEFWJDF 


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    PDF IEC61000-4-2 2N2222 2N2222 circuit Q2 2N2222 MA150A

    Untitled

    Abstract: No abstract text available
    Text: PLED Open LED Protectors PLED5HT SOT 89 Series PLED5HT SOT 89 Series RoHS Description    *GPOFPGUIF-&%TJOBOBSSBZGBJMTPQFO UIJTEFWJDF


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    PDF 50QFO-& QPXFSDJSDVJUTUIBUDBOBMTP50 OT-89

    se617

    Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
    Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents


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    PDF A13052EJ6V0BL00 A13052EJ6V0BL se617 SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442

    Untitled

    Abstract: No abstract text available
    Text: PLED Open LED Protectors PLED5HT SOT 89 Series PLED5HT SOT 89 Series RoHS Description    *GPOFPGUIF-&%TJOBOBSSBZGBJMTPQFO UIJTEFWJDF 


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    PDF OT-89 OT-89

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
    Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358

    se617

    Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883
    Text: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the


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    PDF A13826EJ7V0DM00 A13826EJ7V0DM se617 vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


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    PDF iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK

    1v17

    Abstract: No abstract text available
    Text: P U M A 2 U2 0 0 0 m o i a i c PUMA 2U2000-12/15/17/20 Issue 12 .: February 1990 ADVANCE PRODUCT INFORMATION Semiconductor Inc. Pin Definition 1.048.576 bit CMOS High Speed UV EPROM FMtures User Configurable as 8,16 or 32 bit wide. Very Fast access times of 120/150/170/200 ns.


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    PDF U2000- 1000mW 530mW 295mW BS9400 MIL-STD-883C. 2U2000MB-20 1v17

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


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    PDF b4E75S5 QQ3T701 nPD658xx bv0T 658X

    transistor f422

    Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
    Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high


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    PDF xPD658xx transistor f422 transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f

    diode ru4d

    Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
    Text: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r


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    PDF aPD658xx diode ru4d ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


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    PDF jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys

    Untitled

    Abstract: No abstract text available
    Text: 52MEb0a OOOQlll 1 S5E D KODENSHI CORP T - H - l- s * ! L \ A PHOTODIODES BP-5BCB»-b7 5 ' n y •7 * h l« « -a E 4 rS !3 ftL-ri'*-ro DIMENSIONS Unit: mm) K T 'fo The BP-5BC is a high-output, very low dark current silicon photodiode mounted in a low-cost ceramic package for


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    PDF 52MEb0a 600nm) 2856KflRit S242b0fl

    D65806

    Abstract: No abstract text available
    Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


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    PDF 65-micron D65806