ST7038
Abstract: COM16 SEG80 Sitronix LCD common driver 6800-4bit LCD display intel 8080
Text: ST Sitronix ST7038 Dot Matrix LCD Controller/Driver FEATURES 5 x 8 dot matrix possible Support low voltage single power operation: 64 x 8-bit Character Generator RAM CGRAM 80 x 8-bit Display RAM (80 characters max.) 16 x 5 bit ICON RAM Variable instruction functions:
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ST7038
ST7038
COM16
SEG80
Sitronix LCD common driver
6800-4bit
LCD display intel 8080
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34992
Abstract: No abstract text available
Text: Reference Virtex Virtex and XC4000X Series FPGAs Each Virtex family has its own unique features to meet different application requirements. All devices have both distributed RAM and block RAM, and between four and eight DLLs for efficient clock management.
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XC4000X
tar8816
146K-1
628K-2
1062K
72x108
857K-2
1240K
80x120
221K-3
34992
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34992
Abstract: 33K-100 141-4K 504k 33K100
Text: Reference Virtex Virtex and XC4000X Series FPGAs Each Virtex family has its own unique features to meet different application requirements. All devices have both distributed RAM and block RAM, and between four and eight DLLs for efficient clock management.
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XC4000X
tar16
146K-1
628K-2
1062K
72x108
857K-2
1240K
80x120
221K-3
34992
33K-100
141-4K
504k
33K100
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CY62157DV30LL
Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features
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CY62157DV30
CY62157DV30
I/O15)
C3115
CY62157DV
45-ns
70-ns
CY62157DV30LL
CY62157CV25
CY62157CV30
CY62157CV33
CY62157DV30L
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CY62157
Abstract: CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features •Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features
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CY62157DV30
CY62157CV25,
CY62157CV30,
CY62157CV33
48-ball
48-pin
44-pin
CY62157DV
CY62157
CY62157DV30LL-45ZSXI
CY62157DV30LL-45BVI
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CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62157DV30
I/O15)
45-ns
70-ns
CY62157CV25
CY62157CV30
CY62157CV33
CY62157DV30L
CY62157DV30LL
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CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62157DV30
I/O15)
45-ns
70-ns
CY62157CV25
CY62157CV30
CY62157CV33
CY62157DV30L
CY62157DV30LL
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Untitled
Abstract: No abstract text available
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62157DV30
CY62157CV25,
CY62157CV30,
CY62157CV33
48-ball
48-pin
44-pin
512Kodified
45-ns
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KDS 4.000 Crystal
Abstract: KDS 4B 12 MHZ crystal KDS crystal 20.000
Text: SH67L19A 4K 4-bit Micro-controller with LCD Driver Features SH6610C-Based Single-Chip 4-bit Micro-Controller With LCD Driver ROM: 4K X 16bits RAM: 303X 4bits - 47 System control register - 256 Data memory - 228 bits LCD RAM Operation voltage: 1.2V - 1.7V 24 CMOS Bi-directional I/O pads
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SH67L19A
SH6610C-Based
16bits
768kHz
32kHz
131kHz.
455kHz
SEG10
SEG11
SEG12
KDS 4.000 Crystal
KDS 4B 12 MHZ crystal
KDS crystal 20.000
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in
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CY62158DV30
1024K
CY62158DV30
CY62158DV
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05392 Spec Title: CY62157DV30 MOBL R 8-MBIT (512K X 16) MOBL(R) STATIC RAM Sunset Owner: Ramesh Raghavan (rame) Replaced by: NONE CY62157DV30 MoBL 8-Mbit (512K x 16) MoBL Static RAM This is ideal for providing More Battery Life (MoBL®) in
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CY62157DV30
CY62157CV25,
CY62157CV30,
CY62157CV33
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d1667
Abstract: PD16675A w0350 40938 memory128 S1119-5 ic 6616 D-1667
Text: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD16675A 1/34，1/36 デューティ RAM 内蔵ドライバ µPD16675A は，フルドット LCD の表示が可能な RAM 内蔵のドライバです。この IC は 1 チップで 128x32 ドッ
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PD16675A
RAM128
PD16675AW/P
PD16675AN-051
PD16675AN-XXX
S11195JJ1V0DS00
COM32
SEG1SEG128
Memory128
d1667
PD16675A
w0350
40938
S1119-5
ic 6616
D-1667
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Untitled
Abstract: No abstract text available
Text: inte« 2104A 4096 x 1 BIT DYNAMIC RAM RAM 2104A Max. A ccess Tim e ns 350 Read, W rite Cycle (ns) 500 Max. IDD (mA) 35 • Highest Density 4K RAM Industry Stan dard 16 Pin Package ■ Low Power 4K RAM ■ All Inputs Including Clocks TTL Compatible ■ Refresh Period: 2 ms
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STATIC RAM 2114
Abstract: RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116
Text: EDI8M32512CA ^EtECTBOMC E D L DEStGNS WC. m 512Kx32 Static Ram 512Kx32 CMOS, High Speed Static RAM Features The EDI8M32512CA, a high speed, high performance, 16 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs.
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EDI8M32512CA
512Kx32
EDI8M32512CA,
512Kx8
EDI8M32512LPA20GB
EDI8M32512LPA20GI
10x100=
STATIC RAM 2114
RAM 2114
2114 static ram ic
EDI8M32512CA
RAM 2116
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits
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XL24410
XL24810
XL2441ODS
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Untitled
Abstract: No abstract text available
Text: 8K x 8 Static RAM W i t h Flash Clear Low L7C186/L7CL186 Pow er DESCRIPTION FEATURES U 8K x 8 CMOS Static RAM with I ligh Speed Flash Clear The L7C186 and L7CL186 are high performance, low pow er CMOS static RAM with a high speed Flash Clear feature. The storage circuitry is organ
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L7C186)
L7CL186)
IDT7165
28-pin
32-pin
L7C186/L7CL186
28-pln
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sram 2112
Abstract: 2114 static ram STATIC RAM 2114
Text: S-22S10R/I 64-word X4-bit parallel NON-VOLATILE RAM The S-22S10R/I is a non-volatile CM OS RAM, co m p o se d of a CM OS static RAM and a non-volatile e le ctrically erasable p ro gram m ab le m em ory E2PROM to backup the SRAM. The organization is 64-w ord x 4-bit (total 256 bits) and the
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S-22S10R/I
64-word
S-22S10R/I
X2210
D01fifi4
sram 2112
2114 static ram
STATIC RAM 2114
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mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories
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MS800MM0S
MC3870
MC14S00B,
MC141000/1206
M2900
M10800
M6800
MC14500B,
MC141000/1200
mcm6830
EXORCISER motorola M68MM01A
7642T
MC68B54
transistor bf 175
motorola application note 6809 6844
MMS1117
EXORCISER motorola M68MM01A2
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Untitled
Abstract: No abstract text available
Text: CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese lected (CY7C168A The CY7C168A and CY7C169A are highperform ance CM OS static RAM s orga nized as 4096 by 4 bits. Easy memory ex
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CY7C168A)
CY7C169A)
CY7C168A
CY7C169A
7C169A
--25PC
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MN 2114 static ram
Abstract: a12t 2116 static ram LA12T
Text: LOGIC DEVICES INC BhE D • S S b S T Q S OOOlOafi M ■ _ 8K x 8 Static RAM with Flash Clear Low FEATURES; L7C186/L7CL186 power O iS G R IP T lO N □ 8K x 8 CMOS Static RAM with High Speed Flash Clear □ Auto-Powerdown Design
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L7CI86)
L7CL186)
1DT7165
28-pin
32-pin
L7C186/L7CL186
MN 2114 static ram
a12t
2116 static ram
LA12T
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Untitled
Abstract: No abstract text available
Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Order this docum ent by MCM69P618A/D MCM69P618A Product Preview 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM The MCM69P618A is a 1M bit synchronous fast static RAM designed to pro vide a burstable, high performance, secondary cache for the 68K Family, Pow
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MCM69P618A/D
MCM69P618A
MCM69P618A
i960TM
with03
1ATX35175-0
69P618A/D
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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intel 2116
Abstract: 2104 RAM intel 2104a SH 2104 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE MZ710 intel 2104
Text: in t e i" 2104A 4096 x 1 BIT DYNAMIC RAM 2104A M ax. A ccess T im e ns 350 Read, W rite C ycle (ns) 500 35 Max. IDD (m A ) • Refresh Period: 2 ms ■ Highest Density 4K RAM Industry Stan dard 16 Pin Package ■ O n -C h ip Latches for Addresses, Chip
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Untitled
Abstract: No abstract text available
Text: M O TO R O LA SE M IC O N D U C T O R T E C H N IC A L DATA Product Preview O rder this docum ent by M CM69F618A/D MCM69F618A 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM The MCM69F618A is a 1M bit synchronous fast static RAM designed to pro
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CM69F618A/D
MCM69F618A
MCM69F618A
i960TM
1ATX3517
MCM69F618A/D
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