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    40938 Search Results

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    10140938-101LF Amphenol Communications Solutions VerIO™ Connector, Input Output Connectors, Plug kit suitable w/o RJ45 jack Visit Amphenol Communications Solutions
    SF Impression Pixel

    40938 Price and Stock

    TE Connectivity 284093-8

    TERM BLK 8POS TOP ENTRY 5MM PCB
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    SICK AG 1040938

    SENSOR PROX INDUCTIVE 5MM CYLIND
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    Desco Industries Inc 40938

    FLOOR RUNNER RUBBER BLACK 20'
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    SICK AG 6040938

    SENSOR LEVEL ANALOG
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    Phoenix Contact 3240938

    CABLE GLAND 10MM POLYAMIDE
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    40938 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    40938 Desco Static Control, ESD, Clean Room Products - Static Control Grounding Mats - FLOOR RUNNER RUBBER BLACK 20"X3" Original PDF
    40938 Unknown Shortform Electronic Component Datasheets Short Form PDF
    4093-832-AL RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF
    4093-832-B RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF
    4093-832-N RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFNO FIN Original PDF
    4093-832-S RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF
    4093-832-SS RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF

    40938 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    High Power GaAs FET

    Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
    Text: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4 17Network High Power GaAs FET Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 High voltage GaAs FET FLC31

    Bond

    Abstract: power amplifier mmic
    Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four


    Original     		PDF FMM5829X 39dBm FMM5829X Bond power amplifier mmic

    EMM5832

    Abstract: No abstract text available
    Text: EMM5832VU Preliminary K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=31.0dBm typ. ・High Linear Gain: GL=20.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION


    Original     		PDF EMM5832VU EMM5832VU EMM5832

    38816

    Abstract: ED-4701 FLM1414-15F
    Text: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM1414-15F FLM1414-15F 38816 ED-4701

    FLL21E010MK

    Abstract: r1045
    Text: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		PDF FLL21E010MK 40dBm 17GHz 2200MHz FLL21E010MK r1045

    FMM5826X

    Abstract: Ka-band ED-4701
    Text: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications


    Original     		PDF FMM5826X 37dBm FMM5826X 1906B, Ka-band ED-4701

    FMM5820QH

    Abstract: power amplifier mmic
    Text: FMM5820QH Ka-Band Power Amplifier MMIC FEATURES •High Output Power: P1dB = 36.0 dBm Typ. •High Linear Gain: GL = 23.0 dB(Typ.) •Frequency Band: 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820QH is a power amplifier MMIC that contains a fourstage amplifier, internally matched, for standard communications


    Original     		PDF FMM5820QH FMM5820QH 1906B, power amplifier mmic

    Untitled

    Abstract: No abstract text available
    Text: FMM5059VU Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=30dB (typ.) Impedance Matched Zin/Zout=50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The FMM5059VU is a MMIC amplifier that contains a three-stages


    Original     		PDF FMM5059VU FMM5059VU 1906B,

    gl 9608

    Abstract: No abstract text available
    Text: FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm Typ. •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications


    Original     		PDF FMM5820X FMM5820X 1906B, gl 9608

    Bach

    Abstract: Eudyna Devices X BAND power amplifiers power amplifier 800mA ED-4701 FMM5829X UF 600m power amplifier mmic
    Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four


    Original     		PDF FMM5829X 39dBm FMM5829X 1906B, Bach Eudyna Devices X BAND power amplifiers power amplifier 800mA ED-4701 UF 600m power amplifier mmic

    S465A

    Abstract: FLM1314-18F ED-4701
    Text: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM1314-18F FLM1314-18F 25ong, S465A ED-4701

    FLM4450-45F

    Abstract: ED-4701 ds 6930
    Text: FLM4450-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: ηadd=41%(Typ.) ・Broad Band: 4.4~5.0GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM4450-45F FLM4450-45F ED-4701 ds 6930

    Untitled

    Abstract: No abstract text available
    Text: FMM5714X 37-42GHz Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 3dB Typ. High Associated Gain : Gas = 22dB ( Typ.) Wide Frequency Band : 37-42GHz High Output Power : P1dB = 20dBm ( Typ. ) @f=42GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION


    Original     		PDF FMM5714X 37-42GHz 37-42GHz 20dBm 42GHz FMM5714X

    Untitled

    Abstract: No abstract text available
    Text: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION


    Original     		PDF EMM5840X 39dBm EMM5840X

    GHzS11

    Abstract: 7824 TO-3 package
    Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers


    Original     		PDF FLL21E040IK 40dBm 2200MHz FLL21E040IK GHzS11 7824 TO-3 package

    22N19

    Abstract: BC548c PHILIPS philips resistors philips crt Jinn TDA4882 48106 7 segment display 5612 AN9401 diagram tv Philips 14
    Text: Application Note Improved Brightness Uniformity Ir. J.J. Hekker Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Parabola generator Brightness uniformity Brightness decrease Contrast modulation Wide-screen Report No Date Pages


    Original     		PDF ETV/AN94012 TDA4882) 22N19 BC548c PHILIPS philips resistors philips crt Jinn TDA4882 48106 7 segment display 5612 AN9401 diagram tv Philips 14

    FET MARKING

    Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
    Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for


    Original     		PDF ELM5964-4PS ELM5964-4PS FET MARKING ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4

    ED-4701

    Abstract: FLM1314-18F RM-1101
    Text: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: add=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50 ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM1314-18F FLM1314-18F ED-4701 RM-1101

    FLM1415-8F

    Abstract: FLM1415-8 ED-4701
    Text: FLM1415-8F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=39.0dBm Typ. ・High Gain: G1dB=5.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 14.5~15.3GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM1415-8F FLM1415-8F 1906B, FLM1415-8 ED-4701

    elm7179

    Abstract: ELM7179-4PS sumit
    Text: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for


    Original     		PDF ELM7179-4PS ELM7179-4PS elm7179 sumit

    EMM5822VU

    Abstract: FMM5822VU emm5822 FMM5822 k-band amplifier RO4003 power amplifier mmic
    Text: FMM5822VU K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=32.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band: 17.7~19.7GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The FMM5822VU is a MMIC amplifier that contains a three-stage


    Original     		PDF FMM5822VU FMM5822VU 1906B, EMM5822VU emm5822 FMM5822 k-band amplifier RO4003 power amplifier mmic

    FMM5804YD

    Abstract: YC 27000 JESD22-A114-C J-STD-020B RO4003 rogers laminate materials
    Text: FMM5804YD K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 24.5 dBm Typ. •High Linear Gain; GL = 17 dB(Typ.) •Frequency Band ; 17.5 – 26.5 GHz •SMT Laminate Package (YD Package) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5804YD is a power amplifier MMIC that contains a four


    Original     		PDF FMM5804YD FMM5804YD YC 27000 JESD22-A114-C J-STD-020B RO4003 rogers laminate materials

    EMM5840X

    Abstract: Harbour Industries UTC 393
    Text: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION


    Original     		PDF EMM5840X 39dBm EMM5840X Harbour Industries UTC 393

    Untitled

    Abstract: No abstract text available
    Text: Product spécification Philips Semiconductors CATV Amplifier Module BGN584A DESCRIPTION Excellent linearity • Extremely low noise 1 input Optimal reliability ensured by TiPtAu metallized crystals, silicon nitride passivation and rugged construction. 2 common


    OCR Scan     		PDF BGN584A MSB047 ADS88