MS27212
Abstract: MIL-T-55155 D1277B MS25036-102 MS25435 MS27429 MS20659-126 MIL-T-16366 M81824 MIL-T-15659
Text: MIL-STD-l277B 28 December 1983 SUPERSEDING MIL-S- D-1277A 22 Ju’y 1970 MILITARY STANDARD SPLICES, TERMINALS, TERMINAL BINDING POSTS, TERMINAL JUNCTION SYSTEMS, WIRE CAPS; ELECTRICAL BOARDS, MIL-STD-1277B I EPARTMENTOF I)EF13NSI: WASI{INGTON. D.C. ‘20301
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MIL-STD-l277B
D-1277A
MIL-STD-1277B
EF13NSI:
MIL-STD-12773
MIL-T-7928"
277r3
MS25274
MS27212
MIL-T-55155
D1277B
MS25036-102
MS25435
MS27429
MS20659-126
MIL-T-16366
M81824
MIL-T-15659
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TCM8230MD I2C
Abstract: TCM8230MD TCM8230MDA TCM8230 color tv block diagram sensor photo QCIF* tcm8230md toshiba filtering "average pixel value" ITU656 RGB565
Text: TCM8230MD A Ver. 1.20 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8230MD (A) TENTATIVE VGA CAMERA MODULE The TCM8230MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image
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TCM8230MD
TCM8230MD
TCM8230MD I2C
TCM8230MDA
TCM8230
color tv block diagram
sensor photo
QCIF* tcm8230md
toshiba filtering "average pixel value"
ITU656
RGB565
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rb57
Abstract: No abstract text available
Text: Precision Wirewound Resistors A X IA L LEAD Series 100 LEAD LENGTH LENG TH L MO STYLE 133 139 144 115 156 143 137 136 132 138 134 170 146 180 190 M il R-93 EQUIV. RB56 RB55 RB54 RB53 RB52 RB57 RB58 RB59 INCH ± .0 3 2 .500 .700 .250 .340 .375 .500 .750 .610
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R143018
Abstract: R 143 018 000 R 143 156 000 R143008 R143
Text: TNC CABLE CLAMP TYPE FOR FLEXIBLE CABLE Straight plug CABLE GROUP .102 2.6 /5 0 + 75 R 143 004 000 PART NUMBER .4 3 3 (1 1 )/flats • 4 3 3 (ll)/flats _ Captive contact YES Assem bly instructions M04 page 29 Straight plugs CABLE GROUP .197 (5 )/5 0 .236 (6) / 75 + 93
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13001 6D 331
Abstract: 13001 8D 331 13001 s 8d
Text: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e
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Untitled
Abstract: No abstract text available
Text: SCIENTIFIC/ MINI-CIRCUITS 4TE ]> • flObflflll 0001M57 b51 « S C C very low distortion Frequency Mixers LEVEL 17S -H7dBm LO, up to + 14dBm RF LRMS-2H computer-automated performance data typical production unit / for data of other models consult factory
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0D01457
17dBm
14dBm
71X18
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Untitled
Abstract: No abstract text available
Text: SCIENTIFIC/ MINI-CIRCUITS iHE T> • flObflflll 0001M57 b51 « S C C very low distortion Frequency Mixers LEVEL 17S + ^ d B m ^ LO, up to + 14dBm RF LRMS-2H computer-automated performance data typical production unit / for data of other models consult factory
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0001M57
14dBm
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ATF-26100
Abstract: AT-10600 4sut ATF26100 ATF26100-GP3
Text: HEWLETT-PACKARD/ m CPIPNTS b lE ]> • 4447SA4 PACKARD 73b ■HPA Chip Outline Features • • • 000^32 ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET HEW LETT Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz
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4447SA4
ATF-26100
AT-10600)
ATF-26100
AT-10600
4sut
ATF26100
ATF26100-GP3
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2SC1600
Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is
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b4S7414
NE57500
NE57510
NE57520
NE575
2SC1600
2SC1042
2SC1642
NE57520
321E
S21E
2SC164
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ASSEMBLY INSTRUCTIONS Radiall
Abstract: R143018 Radiall 321 007 000 ASSEMBLY INSTRUCTIONS Radiall crimp 02 Radiall 161 256 000 RRU 32 ASSEMBLY INSTRUCTIONS Radiall solder 02 R 143 018 000 R 143 156 000 3549B
Text: ASSEMBLY INSTRUCTIONS W asher M01 B ack n u t I T Body réducteur ▼ & C e n te r C o n ta c t G asket B ra id c la m p ▼ D C O NNECTO RS R 143 052 000 R 143 337 000 1-1 2-1 2-2 Strip cable. .205 5,2 Fit back nut, washer, gasket and braid clam p, reducing adaptor.
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Untitled
Abstract: No abstract text available
Text: SCIENTIFIC/ MINI-CIRCUITS HTE D • BDbaail 0001353 Q2S HISCC plug-in, surface-mount Frequency Mixers mo^ I CV/CI "7 TUF' 5 TUF-5SM LbVbL / +7 dBm LO, up to +1 dBm RF ^7 computer-automated performance data typical production unit / for data of other models consult factory
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758889
Abstract: ci 3842 4833 TUF-2SM CI 4940 CI 4066
Text: SCIEN TIFIC / M IN I-CIRCU ITS MTE ] • fiObflflll 00013m 303 B S C C plug-in, surface-m ount Frequency Mixers M odels t-74-09-0i I C \ / C I -7 LEVEL 7 +7 dBm LO, up to TUF' 2 +^ dBm RF) TUF-2SM computer-automated performance data typical production unit / for data of other models consult factory
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QQ01341
3X000
460l01
-20l78
-5X13
758889
ci 3842
4833
TUF-2SM
CI 4940
CI 4066
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2SC1593
Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is
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b427414
NE64300
NE64310
NE64320
NE643
NE64300)
NE64310)
NE64320)
2SC1593
2SC1041
GE-64
NEC k 2134 transistor
NE64320
V020
transistor BU 189
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Untitled
Abstract: No abstract text available
Text: SSMC Bulkhead Mounted Receptacles S tr a ig h t B u lk h e a d J a c k R e c e p ta c le s .093" max panel thickness F ro n t m o u n t R e ar m o u n t -.080 I*-. 126* .036 dia. PI "f .020 dia. Hex 5/32 A. F. Hex 3/16 A. F. tolerance +.003, -.000 7004-1512-000
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5059 mixer
Abstract: 35X14 23128 E 70 5059
Text: SC IEN TIFIC/ M IN I-CIR CUITS ^C^Z D • flObflfill 0001431 345 * S C C surface-m ount T-74-09-0] Frequency Mixers Models LEVEL 7 + 7dBm LO, up to + 1dBm RF LRMS-2D computer-automated performance data typical production unit / for data of other models consult factory
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T-74-09-0I
RHS-20
5059 mixer
35X14
23128
E 70 5059
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WJ-A59
Abstract: WJ-CA59-1 WJA59 WJ-A59-1 WJA5
Text: WJ-A59-1 / SMA59-1 10 to 700 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH DYNAMIC RANGE: +117 dBm 1 MHz BAND ♦ HIGH OUTPUT POWER: +22 dBm (TYP.) ♦ HIGH THIRD ORDER I.P.: +36 dBm (TYP.) ♦ WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS
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WJ-A59-1
SMA59-1
A59-1
50-ohm
WJ-A59
WJ-CA59-1
WJA59
WJA5
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TRANSISTOR BC 136
Abstract: TRANSISTOR SOT-23 marking JE
Text: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain
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JEDECTO50
569-GS
TRANSISTOR BC 136
TRANSISTOR SOT-23 marking JE
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PT 2102 ic
Abstract: 2N6679 HXTR-2101TXV HXTR-4101 HPAC-70GT HXTR-6106 6105T HXTR-2101 HXTR-6105 HXTR-2001
Text: HEWLETT-PACKARD-. CMPNTS EOE t C3 M4M7SflM 0005512 2 □ 181 t S S ä S General Purpose Transistors HXTR-2001 Chip Technical Data • High Gain 11 dB Typical at 4 GHz • Low Noise Figure 3.8 dB Typical at 4 GHz • High O utput Pow er 20 dBm Typical PldB at
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44475A4
Q0551S
HXTR-2001
2N6679,
HXTR-2101,
HXTR-2102,
HXTR-4101,
HXTR-6105,
HXTR-6106,
at-2102
PT 2102 ic
2N6679
HXTR-2101TXV
HXTR-4101
HPAC-70GT
HXTR-6106
6105T
HXTR-2101
HXTR-6105
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transistor BC 236
Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
Text: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation
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BC635
15A3DIN
transistor BC 236
bc 106 transistor
transistors marking HK
transistor C 639 W
transistors BC 23
bc 569
A27 637
transistor BC 639
A27 639
marking code transistor HK
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Untitled
Abstract: No abstract text available
Text: RECTANGULAR TONGUE TERM INALS/M IL-T-7928 Rectangular tongue insulated terminals are covered by MS-17143 ships . rr\. m o le x Molex-ETC Military Specifications M S -1 7 1 4 3 Type II Insulated •i Molex-ETC Order No. 19102-0001 1 and 2 -2 19102-0002
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IL-T-7928
MS-17143
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2SC2407 equivalent
Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The
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L4H7414
NE416
for23
2SC2407 equivalent
2SC2407
NC921
nec 2561 equivalent
2SC1592
NE41607
2sc1949
2SC1426 equivalent
nec 2561 le
NE41600
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BZWO4
Abstract: No abstract text available
Text: GENERAL INSTRUMENT CORP/ DSE D | BÛTOIB? 0003271 ? T-n-23 • v^> g l a s s p a s s iv a t e d GENERAL INSTRUMENT V O LT A G E R A N G E 6.6 to 440 Volts 400 Watt Peak Power 1.0 Watt Steady State m D O -41 FEATURES • Plastic package has Underwriters Laboratory
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T-n-23
DO-41
of-1500
BZWO4
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Avantek UA-152
Abstract: No abstract text available
Text: AVANTEK INC 50E D Q avantek • 1141%h 0GQb73M MSF-86 Series Silicon Bipolar MMIC Frequency Converter 3 “ T-74 -OÖ \ Functional Block Diagrams Features • Up or Down Frequency Conversion with up to 12 dB Conversion Gain • RF input from 0.1 to 2.0 GHz
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0GQb73M
MSF-86
SF-86
MSF-8685
MSF-8670
8717cr
Avantek UA-152
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2SC2407
Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli
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L4H7414
NE416
T-33-Ã
2SC2407
nec 2561 equivalent
2SC1255
NE41607
2sc1949
NE41632B
NC921
NE41635
2SC2407 equivalent
2SC1592
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