Untitled
Abstract: No abstract text available
Text: C3D06065E VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 9.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 15 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D06065E
650-Volt
O-252-2
C3D06065E
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Untitled
Abstract: No abstract text available
Text: C3D06065A VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 8.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 16 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D06065A
650-Volt
O-220-2
C3D06065A
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C2D10120A
Abstract: No abstract text available
Text: C2D10120A VRRM VRRM= 1200 = 1200 V V Silicon Carbide Schottky Diode Zero R ecovery Rectifier Features • • • • • • • IF TC=135˚C = 14.5 A IF = 10 A Qc nC 61 nC Qc = 61 Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C2D10120A
O-220-2
C2D10120
C2D10120A
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Untitled
Abstract: No abstract text available
Text: C3D04065A VRRM = VRRM = 650650 V V Silicon Carbide Schottky Diode IF ITF;C=135˚C 7.5 TC<135˚C= 7.6AA Z-Rec Rectifier Qc Qc = 8.5 = 8.5 nC nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application
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C3D04065A
650-Volt
O-220-2
C3D04065A
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified
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TA1062-QC-EC
GFTM043IA480272-S_
886-2-2668-8y
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified
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TA1062-QC-EC
GFTM043HA480272-S_
886-2-2668-8y
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SDP20S120D
Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature
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SDP20S120D
O-247
SDP20S120D
C4692
SEMISOUTH
sdp20s120
solar inverter
SemiSouth Laboratories
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SEMISOUTH
Abstract: SDP60S120D SemiSouth Laboratories sdp60s
Text: Silicon Carbide SDP60S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current
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SDP60S120D
O-247
SDP60S120D
SEMISOUTH
SemiSouth Laboratories
sdp60s
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Untitled
Abstract: No abstract text available
Text: C4D10120E VRRM Silicon Carbide Schottky Diode Qc Features = 52 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • •
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C4D10120E
1200-Volt
O-252-2
C4D10120E
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SEMISOUTH
Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current
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SDP10S120D
O-247
SEMISOUTH
SDP10S120D
C2652
induction heating schematic
silicon carbide
"silicon carbide" device
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SEMISOUTH
Abstract: SDA10S120 C-183 silicon carbide
Text: Silicon Carbide PRELIMINARY SDA10S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current
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SDA10S120
O-220
SEMISOUTH
SDA10S120
C-183
silicon carbide
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SEMISOUTH
Abstract: SDA05S120 sine wave ups SCHEMATIC silicon carbide C15600 solar inverter SemiSouth Laboratories
Text: Silicon Carbide PRELIMINARY SDA05S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current
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SDA05S120
O-220
SEMISOUTH
SDA05S120
sine wave ups SCHEMATIC
silicon carbide
C15600
solar inverter
SemiSouth Laboratories
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d06s60
Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
Text: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary V VRRM 600 Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark Qc 21 nC No reverse recovery
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SDP06S60,
SDB06S60
SDT06S60
P-TO220-2-2.
P-TO220-3
P-TO220-3-1.
SDP06S60
Q67040-S4371
D06S60
d06s60
D06S60C
smd diode marking code UJ
T-1228
SDB06S60
SDP06S60
SDT06S60
d 132 smd diode
diode smd marking code 435
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c4d30120d
Abstract: No abstract text available
Text: C4D30120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 43A* Z-Rec Rectifier Qc Features • • • • • = 155nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D30120D
155nC*
O-247-3
C4D30120D
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|
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Untitled
Abstract: No abstract text available
Text: SDP04S60 SDD04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF
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SDP04S60
SDD04S60
P-TO252-3-1
P-TO220-3-1
Q67040-S4369
D04S60
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Untitled
Abstract: No abstract text available
Text: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D40120D
198nC*
O-247-3
O-24planted
C4D40120D
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Untitled
Abstract: No abstract text available
Text: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D40120D
198nC*
O-247-3
O-24planted
C4D40120D
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Q67040-S4370
Abstract: No abstract text available
Text: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF
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SDP06S60
SDB06S60
P-TO220-3
P-TO220-3-1
Q67040-S4371
D06S60
Q67040-S4370
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P-TO252
Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60
Text: SDP04S60, SDD04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary Revolutionary semiconductor V 600 VRRM material - Silicon Carbide Switching behavior benchmark Qc 13 nC No reverse recovery
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SDP04S60,
SDD04S60
SDT04S60
P-TO220-2-21.
P-TO252-3-1.
P-TO220-3-1.
SDP04S60
Q67040-S4369
D04S60
P-TO252
D04S60
diode schottky 600v
TO252 rthjc
Q67040-S4368
Q67040-S4369
SDD04S60
SDP04S60
SDT04S60
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to220 pcb footprint
Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445
Text: SDP04S60, SDD04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery
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SDP04S60,
SDD04S60
SDT04S60
P-TO220-2-2.
P-TO252-3-1.
P-TO220-3-1.
SDP04S60
Q67040-S4369
D04S60
to220 pcb footprint
D04S60
P-TO252
Schottky diode TO220
d 1398
infineon 6260
TO252-3 rthjc
Q67040-S4368
Q67040-S4369
Q67040-S4445
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d12s60
Abstract: SDT12S60 diode schottky code 03 Schottky diode TO220 Q67040-S4470 US180
Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery
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SDT12S60
PG-TO220-2-2.
Q67040-S4470
D12S60
PG-TO-220-2-2
d12s60
SDT12S60
diode schottky code 03
Schottky diode TO220
Q67040-S4470
US180
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D05S60
Abstract: schottky 400v Q67040S4644 SDT05S60
Text: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery
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SDT05S60
PG-TO220-2-2.
D05S60
Q67040S4644
PG-TO-220-2-2
D05S60
schottky 400v
Q67040S4644
SDT05S60
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D05S60
Abstract: Q67040S4644 SDT05S60
Text: SDT05S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery
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SDT05S60
P-TO220-2-2.
D05S60
Q67040S4644
D05S60
Q67040S4644
SDT05S60
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Untitled
Abstract: No abstract text available
Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on
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SDP10S30
SDT10S30
PG-TO220-2-2.
P-TO220-3
P-TO220-3
Q67040-S4372
Q67040-S4447
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