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    D05S60 Price and Stock

    Samtec Inc IDSD-05-S-60.00

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-05-S-60.00 Bulk 1
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    Mouser Electronics IDSD-05-S-60.00
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    Newark IDSD-05-S-60.00 Bulk 1
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    Master Electronics IDSD-05-S-60.00
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    Sager IDSD-05-S-60.00 1
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    Samtec Inc HCMD-05-S-60.00-01

    IDC SOCKET AND TERMINAL CABLE AS
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    DigiKey HCMD-05-S-60.00-01 Bulk 1
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    Avnet Americas HCMD-05-S-60.00-01 Bulk 1
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    Mouser Electronics HCMD-05-S-60.00-01
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    Master Electronics HCMD-05-S-60.00-01
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    Sager HCMD-05-S-60.00-01 1
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    Samtec Inc TCMD-05-S-60.00-01

    2MM DOUBLE ROW MALE IDC ASSEMBLY
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    DigiKey TCMD-05-S-60.00-01 Bulk 1
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    Avnet Americas TCMD-05-S-60.00-01 Bulk 1
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    Mouser Electronics TCMD-05-S-60.00-01
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    Newark TCMD-05-S-60.00-01 Bulk 1
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    Master Electronics TCMD-05-S-60.00-01
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    Sager TCMD-05-S-60.00-01 1
    • 1 $14.24
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    Samtec Inc TCSD-05-S-60.00-01

    2MM DOUBLE ROW FEMALE IDC ASSEMB
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    DigiKey TCSD-05-S-60.00-01 Bulk 1
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    Mouser Electronics TCSD-05-S-60.00-01
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    Newark TCSD-05-S-60.00-01 Bulk 1
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    Samtec Inc IDSD-05-S-60.00-P01

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-05-S-60.00-P01 Bulk 1
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    Avnet Americas IDSD-05-S-60.00-P01 Bulk 1
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    Mouser Electronics IDSD-05-S-60.00-P01
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    Newark IDSD-05-S-60.00-P01 Bulk 1
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    Master Electronics IDSD-05-S-60.00-P01
    • 1 $18.31
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    Sager IDSD-05-S-60.00-P01 1
    • 1 $14.93
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    Find more D05S60 price and stock on Findchips.com

    D05S60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d05s60c

    Abstract: IDT05S60C JESD22
    Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT05S60C PG-TO220-2-2 D05S60C d05s60c IDT05S60C JESD22

    D05S60C

    Abstract: No abstract text available
    Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT05S60C PG-TO220-2-2 IDT05S60C PG-TO220-2-2 D05S60C

    D05S60

    Abstract: schottky 400v Q67040S4644 SDT05S60
    Text: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery


    Original     		PDF SDT05S60 PG-TO220-2-2. D05S60 Q67040S4644 PG-TO-220-2-2 D05S60 schottky 400v Q67040S4644 SDT05S60

    D05S60

    Abstract: Q67040S4644 SDT05S60
    Text: SDT05S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery


    Original     		PDF SDT05S60 P-TO220-2-2. D05S60 Q67040S4644 D05S60 Q67040S4644 SDT05S60

    Schottky diode TO220

    Abstract: DIODE 200A 600V schottky D05S60 diode schottky 600v Q67040S4644 SDT05S60 D05S
    Text: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery


    Original     		PDF SDT05S60 PG-TO220-2-2. D05S60 Q67040S4644 Schottky diode TO220 DIODE 200A 600V schottky D05S60 diode schottky 600v Q67040S4644 SDT05S60 D05S

    D05S60C

    Abstract: IDV05S60C
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV05S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV05S60C Description


    Original     		PDF IDV05S60C IDVxxS60C O220FullPAK D05S60C IDV05S60C

    Untitled

    Abstract: No abstract text available
    Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 12 nC IF 5 A • No temperature influence on the switching behavior


    Original     		PDF IDH05S60C PG-TO220-2 D05S60C

    D05S60C

    Abstract: No abstract text available
    Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 12 nC IF 5 A • No temperature influence on the switching behavior


    Original     		PDF IDH05S60C IDH05S60C PG-TO220-2 D05S60C

    Infineon power diffusion process

    Abstract: D05S60C Schottky diode TO220 JESD22
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV05S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV05S60C Description


    Original     		PDF IDV05S60C IDVxxS60C O220FullPAK Infineon power diffusion process D05S60C Schottky diode TO220 JESD22

    D05S60C

    Abstract: d05s IDH05S60C PG-TO22
    Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 12 nC IF 5 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH05S60C IDH05S60C PG-TO220-2 D05S60C 726-IDH05S60C d05s PG-TO22

    IDH05S60C

    Abstract: D05S60C JESD22
    Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 12 nC IF 5 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH05S60C PG-TO220-2 D05S60C IDH05S60C D05S60C JESD22

    D05S60C

    Abstract: IDT05S60C JESD22 Tj-102
    Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT05S60C PG-TO220-2-2 D05S60C PG-TO220-2-2: D05S60C IDT05S60C JESD22 Tj-102

    D05S60

    Abstract: pg-to220-2-2
    Text: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery


    Original     		PDF SDT05S60 PG-TO220-2-2. Q67040S4644 D05S60 D05S60 pg-to220-2-2

    Untitled

    Abstract: No abstract text available
    Text: IDT05S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 12 nC • No reverse recovery / No forward recovery I F @ T C < 140°C 5 A • Temperature independent switching behavior I F @ T C < 100°C


    Original     		PDF IDT05S60C PG-TO220-2-2 20mA2)