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    Infineon Technologies AG SDP10S30

    DIODE SIL CARB 300V 10A TO220-3
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    SDP10S30 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SDP10S30 Infineon Technologies Silicon Carbide Schottky Diode Original PDF
    SDP10S30 Infineon Technologies 10A diode in TO-220 package Original PDF
    SDP10S30 Infineon Technologies Schottky Diode, 300V, 10A, Silicon Diode, Stamping Code:D10S30 Original PDF

    SDP10S30 Datasheets Context Search

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    D10S30

    Abstract: SDB10S30 SDP10S30 SDT10S30 Q67040-S4372 Q67040-S4373 Q67040-S4447 P-TO220-2-2
    Text: SDP10S30, SDB10S30 SDT10S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary V VRRM 300 material - Silicon Carbide  Switching behavior benchmark  No reverse recovery  No temperature influence on P-TO220-2-2.


    Original     		PDF SDP10S30, SDB10S30 SDT10S30 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 SDB10S30 SDP10S30 SDT10S30 Q67040-S4372 Q67040-S4373 Q67040-S4447 P-TO220-2-2

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. PG-TO220-3-1. Q67040-S4372 Q67040-S4447

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. P-TO220-3 P-TO220-3 Q67040-S4372 Q67040-S4447

    D10S30

    Abstract: Q67040-S4372 Schottky diode TO220 Q67040-S4447 SDP10S30 SDT10S30
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4372 D10S30 D10S30 Q67040-S4372 Schottky diode TO220 Q67040-S4447 SDP10S30 SDT10S30

    Schottky diode TO220

    Abstract: d 1398 infineon 6260 PG-TO220 power Diode 200V 10A D10S30 Q67040-S4372 Q67040-S4447 SDP10S30 SDT10S30
    Text: SDP10S30 SDT10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. PG-TO220-3-1. Q67040-S4372 D10S30 Schottky diode TO220 d 1398 infineon 6260 PG-TO220 power Diode 200V 10A D10S30 Q67040-S4372 Q67040-S4447 SDP10S30 SDT10S30

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4372 Q67040-S4447

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDB10S30 Preliminary data Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 • Switching behavior benchmark VRRM • No reverse recovery Qc 23 nC • No temperature influence on IF 10


    Original     		PDF SDP10S30 SDB10S30 P-TO220-3 P-TO220-3-1 Q67040-S4372 D10S30

    D10S30

    Abstract: Q67040-S4372 Q67040-S4373 SDB10S30 SDP10S30 SDT10S30
    Text: SDP10S30, SDB10S30 SDT10S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM  Switching behavior benchmark  No reverse recovery Qc 23 nC  No temperature influence on IF 10


    Original     		PDF SDP10S30, SDB10S30 SDT10S30 P-TO220-2-21. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 Q67040-S4372 Q67040-S4373 SDB10S30 SDP10S30 SDT10S30

    D10S30

    Abstract: diode smd marking code 435 Q67040-S4372 Q67040-S4373 Q67040-S4447 SDB10S30 SDP10S30 SDT10S30 P-TO220-3-1
    Text: SDP10S30, SDB10S30 SDT10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on P-TO220-2-2. the switching behavior V


    Original     		PDF SDP10S30, SDB10S30 SDT10S30 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 diode smd marking code 435 Q67040-S4372 Q67040-S4373 Q67040-S4447 SDB10S30 SDP10S30 SDT10S30 P-TO220-3-1

    P-TO220SMD

    Abstract: No abstract text available
    Text: SDB10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF


    Original     		PDF SDB10S30 P-TO220-3 Q67040-S4373 D10S30 P-TO220SMD

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    TCA 700 y

    Abstract: BTS 7930 ICE1PS02 igbt eupec TDA16846 equivalent tda16846 TLE72xx ICE1PS01 tda16846 p tca 765
    Text: ООО «ЭФО» ОФИЦИАЛЬНЫЙ ДИСТРИБЬЮТОР Infineon Technologies Силовые полупроводниковые компоненты Инфинеон от производителя №1 в мире w w w. i n f i n e o n . c o m


    Original     		PDF SDB06S60 SDB02S60 SDB04S60 SDB05S60 SDB12S60 SDB08S60 SDB10S60 TCA 700 y BTS 7930 ICE1PS02 igbt eupec TDA16846 equivalent tda16846 TLE72xx ICE1PS01 tda16846 p tca 765

    D10S30

    Abstract: 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd
    Text: SDB10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF 10


    Original     		PDF SDB10S30 P-TO220-3 Q67040-S4373 D10S30 D10S30 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    SDP10S30

    Abstract: SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS
    Text: SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery


    Original     		PDF SIDC24D30SIC3 Q67050-A4163A103 SDP10S30 SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    Buck-Boost Converter advantages

    Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
    Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.


    Original     		PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor