Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PUB4753 Search Results

    PUB4753 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PUB4753 Unknown Original PDF
    PUB4753 Panasonic N-Channel Power F-MOS FET (with built-in zener diode) Original PDF
    PUB4753 Panasonic Silicon N-Channel Power F-MOS FET (with Built-in Zener Diode) Original PDF

    PUB4753 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original     		PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    PU7457

    Abstract: PUB4753
    Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation


    Original     		PDF PUB4753 PU7457) PU7457 PUB4753

    PUB4753

    Abstract: PU7457
    Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation


    Original     		PDF PUB4753 PU7457) PUB4753 PU7457