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    PU7457 Search Results

    PU7457 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PU7457 Unknown N-Channel Enhancement Mode MOSFET Array Original PDF
    PU7457 Panasonic N-Channel Power F-MOS FET (with built-in zener diode) Original PDF
    PU7457 Panasonic TRANS MOSFET N-CH 100±15V 3A 10Plastic SIL Original PDF
    PU7457 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    PU7457 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener diode power

    Abstract: DIODE C155 PU7457 D 1652 transistor C155S
    Text: Power Transistor Arrays F-MOS FETs PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation


    Original
    PDF PU7457 zener diode power DIODE C155 PU7457 D 1652 transistor C155S

    PU7457

    Abstract: PUB4757
    Text: Power Transistor Arrays F-MOS FETs PUB4757 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation


    Original
    PDF PUB4757 PU7457) PU7457 PUB4757

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original
    PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    PU7457

    Abstract: PUB4753
    Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation


    Original
    PDF PUB4753 PU7457) PU7457 PUB4753

    PUB4753

    Abstract: PU7457
    Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation


    Original
    PDF PUB4753 PU7457) PUB4753 PU7457

    PU7457

    Abstract: No abstract text available
    Text: Panasonic P ow er Transistor Arrays F -M O S FETs PU7457 S ilic o n N - C h a n n e l P o w e r F - M O S (w ith b u ilt - i n z e n e r d io d e ) I Features High avalanche energy capability Withstanding high electrostatic voltage No secondary breakdown


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    PDF PU7457 10-Lead PU7457

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N-Channel Power F-M OS (with built-in zener diode) • Features • High avalanche energy capability • Withstanding high electrostatic voltage • No secondary breakdown • High breakdown voltage, large allowable power dissipation


    OCR Scan
    PDF PU7457

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N -C hannel P ow er F-M O S FET (with b u ilt-in zener d io d e ) • • • 9 • 9 Features High avalanche energy capacity High electrostatic breakdown voltage No secondary breakdown High breakdown voltage, large allowable power dissipation


    OCR Scan
    PDF PU7457