zener diode power
Abstract: DIODE C155 PU7457 D 1652 transistor C155S
Text: Power Transistor Arrays F-MOS FETs PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
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PU7457
zener diode power
DIODE C155
PU7457
D 1652 transistor
C155S
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PU7457
Abstract: PUB4757
Text: Power Transistor Arrays F-MOS FETs PUB4757 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
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PUB4757
PU7457)
PU7457
PUB4757
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2SK3585
Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)
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PUB4753
PU7457)
PUB4701
PUB4702
450/600o
380/680o
SIP10-A1
2SK0301
2SK663)
2SK301)
2SK3585
Infrared-Sensor
2SK3578
2SK3584
2SK3583
PUB4701
2SK1104
2SK1860
2SK3585 equivalent
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PU7457
Abstract: PUB4753
Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
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PUB4753
PU7457)
PU7457
PUB4753
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PUB4753
Abstract: PU7457
Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
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Original
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PDF
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PUB4753
PU7457)
PUB4753
PU7457
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PU7457
Abstract: No abstract text available
Text: Panasonic P ow er Transistor Arrays F -M O S FETs PU7457 S ilic o n N - C h a n n e l P o w e r F - M O S (w ith b u ilt - i n z e n e r d io d e ) I Features High avalanche energy capability Withstanding high electrostatic voltage No secondary breakdown
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OCR Scan
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PU7457
10-Lead
PU7457
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Untitled
Abstract: No abstract text available
Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N-Channel Power F-M OS (with built-in zener diode) • Features • High avalanche energy capability • Withstanding high electrostatic voltage • No secondary breakdown • High breakdown voltage, large allowable power dissipation
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OCR Scan
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PDF
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PU7457
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Untitled
Abstract: No abstract text available
Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N -C hannel P ow er F-M O S FET (with b u ilt-in zener d io d e ) • • • 9 • 9 Features High avalanche energy capacity High electrostatic breakdown voltage No secondary breakdown High breakdown voltage, large allowable power dissipation
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OCR Scan
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PDF
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PU7457
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