PU7457 Search Results

PU7457 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
PU7457		Unknown	N-Channel Enhancement Mode MOSFET Array		Original	PDF
PU7457		Panasonic	N-Channel Power F-MOS FET (with built-in zener diode)		Original	PDF
PU7457		Panasonic	TRANS MOSFET N-CH 100±15V 3A 10Plastic SIL		Original	PDF
PU7457		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

PU7457 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
zener diode power Abstract: DIODE C155 PU7457 D 1652 transistor C155S Text: Power Transistor Arrays F-MOS FETs PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PDF	PU7457 zener diode power DIODE C155 PU7457 D 1652 transistor C155S
PU7457 Abstract: PUB4757 Text: Power Transistor Arrays F-MOS FETs PUB4757 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PDF	PUB4757 PU7457) PU7457 PUB4757
2SK3585 Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)	Original	PDF	PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
PU7457 Abstract: PUB4753 Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PDF	PUB4753 PU7457) PU7457 PUB4753
PUB4753 Abstract: PU7457 Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PDF	PUB4753 PU7457) PUB4753 PU7457
PU7457 Abstract: No abstract text available Text: Panasonic P ow er Transistor Arrays F -M O S FETs PU7457 S ilic o n N - C h a n n e l P o w e r F - M O S (w ith b u ilt - i n z e n e r d io d e ) I Features High avalanche energy capability Withstanding high electrostatic voltage No secondary breakdown	OCR Scan	PDF	PU7457 10-Lead PU7457
Untitled Abstract: No abstract text available Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N-Channel Power F-M OS (with built-in zener diode) • Features • High avalanche energy capability • Withstanding high electrostatic voltage • No secondary breakdown • High breakdown voltage, large allowable power dissipation	OCR Scan	PDF	PU7457
Untitled Abstract: No abstract text available Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N -C hannel P ow er F-M O S FET (with b u ilt-in zener d io d e ) • • • 9 • 9 Features High avalanche energy capacity High electrostatic breakdown voltage No secondary breakdown High breakdown voltage, large allowable power dissipation	OCR Scan	PDF	PU7457