Predicting-Operating-Temperature-and-Expected-Lifetime
Abstract: Predicting Operating Temperature and Expected Lifetime PCIM 177 variable capacitor C4AK powersystems simulation model electrolytic capacitor capacitor variable dw-dc variable capacitors
Text: Predicting Operating Temperature and Expected Lifetime of Aluminum-Electrolytic Bus Capacitors with Thermal Modeling Sam G. Parler, Jr. and Laird L. Macomber Cornell Dubilier 140 Technology Place Liberty, SC 29657 Abstract ! Large-can aluminum electrolytic capacitors are widely used as bus capacitors in variable-speed
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Abstract: No abstract text available
Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their
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AN1012
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200B
Abstract: 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562 program eeprom 24c32
Text: Using Endurance Predictive Software AN562 Using the Microchip Endurance Predictive Software INTRODUCTION TOTAL ENDURANCE PREDICTIVE SOFTWARE Endurance, as it applies to non-volatile memory, refers to the number of times an individual memory cell can be erased and/or written some architectures do not erase
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AN562
24C32
24C65.
200B
24C65
24LC04
24LC04B
24LC16B
AN536
AN537
AN562
program eeprom 24c32
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K6X8008T2B-UF55
Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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AN1012
K6X8008T2B-UF55
m48t35
HY628100BLLT1-55
BR1632
SRAM 4T cell
M48T59
m48z32
MK48T12
AN1012
BR1632 safety
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eeprom tutorial
Abstract: program eeprom 24c32 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
Text: AN562 Using the Microchip Endurance Predictive Software Authors: Peter Sorrells Memory Products Division Richard J. Fisher Memory Products Division David Wilkie Reliability Engineering INTRODUCTION Endurance, as it applies to nonvolatile EEPROM memory, refers to the number of times an individual
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AN562
AN536
AN537
eeprom tutorial
program eeprom 24c32
24C32
24C65
24LC04
24LC04B
24LC16B
AN562
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program eeprom 24c32
Abstract: eeprom tutorial 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
Text: AN562 Using the Microchip Endurance Predictive Software Authors: Peter Sorrells Memory Products Division Richard J. Fisher Memory Products Division David Wilkie Reliability Engineering INTRODUCTION Endurance, as it applies to nonvolatile EEPROM memory, refers to the number of times an individual
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AN562
AN536
AN537
program eeprom 24c32
eeprom tutorial
24C32
24C65
24LC04
24LC04B
24LC16B
AN562
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PDF
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samsung "failure rate" lcd
Abstract: program eeprom 24c32 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
Text: Using Endurance Predictive Software AN562 Using the Microchip Endurance Predictive Software INTRODUCTION TOTAL ENDURANCE PREDICTIVE SOFTWARE Endurance, as it applies to non-volatile memory, refers to the number of times an individual memory cell can be erased and/or written some architectures do not erase
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AN562
24C32
24C65.
D-81739
samsung "failure rate" lcd
program eeprom 24c32
24C65
24LC04
24LC04B
24LC16B
AN536
AN537
AN562
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Coffin-Manson Equation
Abstract: No abstract text available
Text: "Reliability and MTBF Overview" Prepared by Scott Speaks Vicor Reliability Engineering Introduction Reliability is defined as the probability that a device will perform its required function under stated conditions for a specific period of time. Predicting with some degree of
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14270x
Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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AN1012
14270x
8107X
m48t35
MK48T08
Zeropower
M48Z35Y
M48Z58
M48Z58Y
AN1012
M48Z02
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BR1632 safety
Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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AN1012
BR1632 safety
BR1632
BR1225X
mk48t08
M48T59Y equivalent
8107X
application note AN1012
m48t35
Zeropower
AN1012
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BR1632 safety
Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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AN1012
BR1632 safety
mk48t08
BR1632
CMOS GATE ARRAYs mitsubishi
application note AN1012
m48t35
AN1012
M48Z02
M48Z08
M48Z12
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br1632 br1225
Abstract: No abstract text available
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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br1632 br1225
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Sanyo supercapacitors
Abstract: ds1307 application notes DS3232 rtc ds1307 ds1307 rtc DS1307 IC APP3816 DS1307 coin cell pc battery holders DS1337
Text: Maxim > App Notes > REAL-TIME CLOCKS May 26, 2006 Keywords: Battery, cell, super cap, supercap, rechargeable APPLICATION NOTE 3816 Selecting a Backup Source for Real-Time Clocks Abstract: Most Dallas Semiconductor real-time clocks RTCs include a supply input for a backup power source.
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DS1685:
DS17285:
DS17485:
DS17885:
DS3231:
DS3232:
DS3234:
DS32KHZ:
AN3816,
APP3816,
Sanyo supercapacitors
ds1307 application notes
DS3232
rtc ds1307
ds1307 rtc
DS1307 IC
APP3816
DS1307
coin cell pc battery holders
DS1337
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maxwell supercapacitor
Abstract: boostcap ultracapacitor ultracapacitor vehicle Maxwell PROCESS
Text: APPLICATION NOTE Maxwell Technologies BOOSTCAP® Energy Storage Modules Life Duration Estimation 2007 Maxwell Technologies Inc. ® 1012839 1. Goal The objective of this document is to explain the way to use the different physical measurements of an ultracapacitor module in order to extrapolate the vital parameters and to estimate the potential operating
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"OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS"
Abstract: william mcmurray optimum snubbers power semiconductors McMurray SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS Ultrafast RECTIFIER DIODES national DIODE 10B3 fast recovery epitaxial diodes transistor Designing RC snubbers RECTIFIER DIODES NATIONAL FRP820
Text: INTRODUCTION A key device in all high voltage AC-DC power supplies is the ultrafast reverse recovery rectifier diode These diodes D1 and D2 in Figure 1 not only play a major role in power supply efficiency but also can be major contributors to circuit electromagnetic interference (EMI) and even cause
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Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA3875 SBOS341 – DECEMBER 2006 Triple 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH 0.1dB GAIN FLATNESS to 150MHz
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OPA3875
SBOS341
700MHz
425MHz,
150MHz
40mVPP
OPA3875
SSOP-16
11mA/ch,
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LT1675-1
Abstract: OPA3875 OPA692 OPA693 OPA875 OPA875ID OPA875IDGKT OPA875IDR
Text: BurrĆBrown Products from Texas Instruments TIV 675 OPA875 SBOS340 – DECEMBER 2006 Single 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH 0.1dB GAIN FLATNESS to 200MHz
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OPA875
SBOS340
700MHz
425MHz,
200MHz
40mVPP
OPA875
425MHz
LT1675-1
OPA3875
OPA692
OPA693
OPA875ID
OPA875IDGKT
OPA875IDR
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA3875 SBOS341B – DECEMBER 2006 – REVISED DECEMBER 2006 Triple 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH
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OPA3875
SBOS341B
700MHz
425MHz,
150MHz
40mVPP
OPA3875
SSOP-16
11mA/ch,
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RR502A
Abstract: RR504 x2864 X2864A X2816A RR-504 predicting xicor X2816A
Text: U ff !' VH I I I I iiJ r r* > 3* / y h \ 'i DETERMINING SYSTEM RELIABILITY FROM E2PROM ENDURANCE DATA By Richard Palm • D ata retention refers to the capability of a non volatile m emory device to retain valid data under worst case conditions. Xicor has published numerous reliability reports
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X2816A
X2864A.
X2864A
RR502A
RR504
x2864
RR-504
predicting
xicor X2816A
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MKI48Z18
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.
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MKI48Z18
MKI48Z18
I48Z18
PHDIP28
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Untitled
Abstract: No abstract text available
Text: SCS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE
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MKI48Z18
MKI48Z18
PHDIP28
100ns
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Untitled
Abstract: No abstract text available
Text: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY
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MKI48Z18
PHDIP28
T-46-23-12
100ns
----------------------------SCS-mOMSON904
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T8570
Abstract: No abstract text available
Text: T S G S -T H O M S O N “ 7# M K48Z30 M K48Z30Y rZ CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS
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K48Z30
K48Z30Y
MK48Z30
MK48Z30Y-4
MK48Z30
MK48Z30/30Y.
MK48Z30/30Y
K48Z30,
T8570
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Untitled
Abstract: No abstract text available
Text: MK48Z30 MK48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.
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MK48Z30
MK48Z30Y
MK48Z30
MK48Z30Y-4
MK48Z30/30Y.
MK48Z30/30Y
K48Z30,
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