T8570
Abstract: No abstract text available
Text: T S G S -T H O M S O N “ 7# M K48Z30 M K48Z30Y rZ CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS
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K48Z30
K48Z30Y
MK48Z30
MK48Z30Y-4
MK48Z30
MK48Z30/30Y.
MK48Z30/30Y
K48Z30,
T8570
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MK48Z30
Abstract: No abstract text available
Text: S5E D • 7 ^ 2 3 7 003fl3flb T13 ■ SGS-THOMSON SGTH T - ^ - 2 L 3 “ / J MK48Z3Ö K48Z30Y S G S- THOMSON CMOS 32K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE
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003fl3flb
MK48Z3Ã
MK48Z30Y
MK48Z30
MK48Z30Y
MK48Z30/30Y
71E1E37
MK48Z30,
T-46-23-13
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mk48z30
Abstract: external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM
Text: K48Z30/30A B -10/12/15 f Z J SG S-IU O M SO N ^7# RfflD(g[S(Q)IILi in^®ROO©i 32 K X 8 ZEROPOWER RAM ADVANCE DATA • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. 1 ■ READ-CYCLE TIME EQUALS WRITE-CYCLE
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MK48Z30/30A
MK48Z30A:
28-DIP
MK48Z30-B10
MK48Z30-B12
MK48Z30-815
MK48Z30A-B10
MK48Z30A-B12
MK48Z30A-B15
mk48z30
external RAM ic 6264
CI 6264
SRAM 6264 application note
6264 cmos ram
STATIC RAM 6264
SRAM 6264
ic 6264
6264 SRAM
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Untitled
Abstract: No abstract text available
Text: K48Z30 K48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.
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MK48Z30
MK48Z30Y
MK48Z30
MK48Z30Y-4
MK48Z30/30Y.
MK48Z30/30Y
K48Z30,
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