B1035CL
Abstract: MBRD1035CTL pr diode motorola B1035
Text: MOTOROLA Order this document by MBRD1035CTL/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Schottky Power Rectifier MBRD1035CTL DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon
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MBRD1035CTL/D
MBRD1035CTL
B1035CL
MBRD1035CTL
pr diode motorola
B1035
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1N5827
Abstract: 1N5828 1N5826 1N5827 equivalent 1N5828 equivalent
Text: MOTOROLA Order this document by 1N5826/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet 1N5826 1N5827 1N5828 Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5826/D
1N5826
1N5827
1N5828
1N5826
1N5828
1N5827
1N5827 equivalent
1N5828 equivalent
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FULL WAVE RECTIFIER CIRCUITS
Abstract: schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5820 1N5821 1N5822
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
FULL WAVE RECTIFIER CIRCUITS
schottky rectifier motorola mbr
THERMAL RUNAWAY IN RECTIFIER
TP2050
1N5820-D
1N5821
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FULL WAVE bridge RECTIFIER CIRCUITS
Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
FULL WAVE bridge RECTIFIER CIRCUITS
1N5821
TP2050
1N5820-D
Motorola 1N5820
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R/mc785.2ct motorola
Abstract: MR821 MR822 MR824 R820 mc785.2ct motorola
Text: ——-—-—. I $;~~: ~~~~v]]j~]jj:,~- J~~ Ffls’.r . . R :G 3’\!ER~f designed inverters, ence and rectifiers for special converters, free wheeling high efficiency applications Designer’s <,;.?- jtib~w,. I 1.1-T~: :-w m such as dc power systems, diodes.
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MC12149
Abstract: MC12149D 10KHZ MA393 MC42149 OTEK Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer MC42149 The MCI 2149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using
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MC42149
1300MHz.
MCI2149
WHX3232S-,
MC12149/D
MC12149
MC12149D
10KHZ
MA393
MC42149
OTEK
Nippon capacitors
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MGV12N120D
Abstract: PD123 tme 126
Text: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA e Product Preview Data Sheet MGVI2NI 20D Insulated Gate Bipolar mansistor with Anti-ParaMUei Diode N<hannel I Enhancement Mode Silicon Gate IGBT & DIODE IN D3~# 12A @ 90:$.&~;es 20 ~ @ 2$~.<:j, ~~~
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MGV12N120D/D
M2-26629296
2PHXM7154
MGV12N120D
PD123
tme 126
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MJ10007
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS
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MJ10007'
MJ10007
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transistor mj10005
Abstract: 440 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10005* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode "Motorola Pr*f*rr*d D«vic« 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS
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J10005*
MJ10005
MJ10005.
MJ100
transistor mj10005
440 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t XOR G ate M C 74VH C 86 The MC74VHC86 is an advanced high speed CMOS 2-input Exclusive-OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similarto equivalent Bipolar Schottky TTL while maintaining
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MC74VHC86
14-LEAD
51A-03
DL203
b3b7255
aiaQM57
MC74VHC86/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus B uffer/Line D river M C 74V H C T240A In vertin g w ith 3 -S ta te O utputs The MC74VHCT240A is an advanced high speed CM OS octal bus buffer fabricated with silicon gate C M O S technology. It achieves high speed
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T240A
MC74VHCT240A
do80217
MC74VHCT240A/D
DL203
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRD1035CTL/D SEMICONDUCTOR TECHNICAL DATA Advance Information M BRD1035CTL SWITCH MODE S chottky Power R ectifier DPAK Power Surface Mount Package . . employing the Schottky Barrier principle in a large area m e tal-to-silicon
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MBRD1035CTL/D
BRD1035CTL
69A-13
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
1N5821
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Order this document by HC705C5TSAD/D Rev. 1 MC68HC705C5 Addendum to MC68HC705C5 8-Bit Microcontroller Unit Technical Summary This addendum supplements the M C 68H C 705C 5 Technical Summ ary with additional information
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HC705C5TSAD/D
MC68HC705C5
1ATX30242-2
HC705C5TSAD/D
Nippon capacitors
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1N5831
Abstract: E5 sot223 1N5829
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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prop30
DO-35
1N5831
E5 sot223
1N5829
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low -V oltage Q uiet CMOS O ctal Buffer Flow Through Pinout M C 74LVQ 541 LVQ 3 -S ta te , N on-Inverting The MC74LVQ541 is a high performance, non-inverting octal buffer operating from a 2.7 to 3.6V supply. This device is similar in function to the
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MC74LVQ541
74LVQ
MC74LVQ541/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA L o w -V o lta g e Q u ie t C M O S O c ta l B u ffer M C 74LVQ 244 LVQ 3 -S ta te , N on-Inverting The MC74LVQ244 is a high performance, non-inverting octal buffer operating from a 2.7 to 3.6V supply. The MC74LVQ244 is suitable for
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MC74LVQ244
MC74LVQ244/D
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1N5831
Abstract: MN5830 1n5829 MN5829 1N5631 1N5830
Text: MOTOROLA SC DIODES/OPTO b4E D • b3b7ESS 00flb27S 7bT « M O T ? MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA 1N 5829 1N 5830 1N5831 M BR5831H, H1 Designer's Data Sheet S w itc h m o d e P o w e r R e c tifie rs . employing the Schottky Barrier principle in a large area metal-to-silicon power
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00flb27S
1N5831
MN5830
1n5829
MN5829
1N5631
1N5830
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA L o w -V o ltag e Q uiet CMOS O ctal Transceiver M C74LVQ 245 LVQ 3 -S ta te , N on-Inverting The MC74LVQ245 is a high performance, non-inverting octal transceiver operating from a 2.7 to 3.6V supply. The MC74LVQ245 is
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MC74LVQ245
MC74LVQ245/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M FT107T1 Medium Power Field Effect Transistor Motorola Pr*f*rr*d Devio* N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount M ED IU M POW ER TM O S FET 250 m A, 200 VOLTS R D S on = 14 OHM MAX This TM O S m edium pow er field effect transistor is designed for
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OT-223
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PC MOTHERBOARD oi CIRCUIT diagram
Abstract: No abstract text available
Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild se m i.c o m tm RC5037 Adjustable Switching Regulator Controller Description • High power switched-mode DC-DC controller can control in excess of 13 A • Output voltage adjustable from 1.5V to 3.6V
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RC5037
RC5037
PC MOTHERBOARD oi CIRCUIT diagram
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IRL3103
Abstract: No abstract text available
Text: FA IR C H IL D www.fairchildsemi.com Ml C O N D U C T O R RC5031 Adjustable Switching Regulator Description • High power switched-mode DC-DC controller can source in excess of 13 A • Output voltage adjustable from 1.5V to 3.6V • 85% efficiency • Cumulative accuracy <3% over line, load, temperature
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RC5031
RC5031
IRL3103
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TI3H
Abstract: DL203 MC74VHC MC74VHCU04 TAG9 G100B
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA H ex In verter M C74VH CU 04 U n b u ffe re d The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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MC74VHCU04
Colorado80217
3Q3-675-2140or
MC74VHC
U04/D
DL203
TI3H
DL203
TAG9
G100B
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demultiplexer 1 to 4 outputs HF
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA L o w -V o ltag e Q uiet CMOS 1 -o f-8 D ecoder/D em ultiplexer M C74LVQ 138 LVQ The MC74LVQ138 is a high performance, 1-of-8 decoder/ demultiplexer operating from a 2.7 to 3.6V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers
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MC74LVQ138
LVQ138
MC74LVQ138/D
demultiplexer 1 to 4 outputs HF
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