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    1N5821 Price and Stock

    Vishay Semiconductors 1N5821-E3-54

    DIODE SCHOTTKY 30V 3A DO201AD
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    DigiKey 1N5821-E3-54 Cut Tape 35,741 1
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    1N5821-E3-54 Reel 33,600 1,400
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    onsemi 1N5821RLG

    DIODE SCHOTTKY 30V 3A AXIAL
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    1N5821RLG Reel 18,000 1,500
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    EBV Elektronik 1N5821RLG 11 Weeks 1,500
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    Micro Commercial Components 1N5821-TP

    DIODE SCHOTTKY 30V 3A DO201AD
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    DigiKey 1N5821-TP Cut Tape 3,535 1
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    1N5821-TP Reel 2,400 1,200
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    Mouser Electronics 1N5821-TP 3,508
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    Diotec Semiconductor AG 1N5821

    DIODE SCHOTTKY 30V 3A DO201
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    DigiKey 1N5821 Cut Tape 1,596 1
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    1N5821 Ammo Pack 1,700
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    Taiwan Semiconductor 1N5821

    DIODE SCHOTTKY 30V 3A DO201AD
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    DigiKey 1N5821 Reel 1,238 1,250
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    1N5821 Datasheets (103)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5821 Bytes 3.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5821 Daesan Electronics CURRENT 3.0 Amperes VOLTAGE 20 to 40 Volts Original PDF
    1N5821 DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5821 Diodes 3.0A SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5821 Diodes Short Form Selection Guide Original PDF
    1N5821 Diodes 3.0A SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5821 Diotec Diode, 3A, 30V, Schottky Barrier Rectifier Original PDF
    1N5821 Diotec Si-Schottky-Rectifiers Original PDF
    1N5821 EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original PDF
    1N5821 Fagor 30 V, 3 A schottky barrier rectifier Original PDF
    1N5821 Fairchild Semiconductor 3.0 Ampere Schottky Barrier Rectifiers Original PDF
    1N5821 Fairchild Semiconductor Schottky Rectifiers Original PDF
    1N5821 FCI Diode, 3A, 30V, Barrier Schottky Diode Original PDF
    1N5821 Formosa 3.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5821 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5821 General Semiconductor DIODE SCHOTTKY DIODE 30V 3A 2DO-201AD Original PDF
    1N5821 General Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5821 Good-Ark SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5821 HY Electronic SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5821 Invac 30 V, 3 A schottky barrier rectifier Original PDF

    1N5821 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N5821

    Abstract: DB-113
    Text: 1N5821 THRU 1N5822 3.0AMP. Schottky Barrier Rectifier VOLTAGE:30 TO 40V CURRENT:3.0A AXIAL LEAD DO-201AD Specification Features: Case: Epoxy, Molded DEVICE MARKING DIAGRAM Weight:1.2Gram Approximately 1N582X KEL High current capability,Low Forward Voltage Drop


    Original
    1N5821 1N5822 DO-201AD 1N582X: 1N5821~ 1N5822 DB-111 1N5821 DB-113 PDF

    5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

    Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original
    1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier PDF

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original
    1N5820, 1N5821, 1N5822 1N5820 1N5822 Surfa5820 1N5821 1N5821 PDF

    mur860 diode

    Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
    Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821


    Original
    1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA PDF

    1N5822 data sheet

    Abstract: 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original
    1N5820, 1N5821 1N5822 DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 1N5822 data sheet 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B PDF

    Schottky

    Abstract: 100-fp CRSH5-6 100V 25A schottky CRSH2-3 1N5817 1N5818 1N5819 1N5820 1N5821
    Text: Schottky Rectifiers 1.0 to 75 Amperes 20 to 100 Volts IO AMPS @TL (oC) 1.0 100 IFSM (AMPS) 25 CASE 2.0 3.0 75 75 95 30 50 80 DO-15 DO-201AD DO-41* VRRM (VOLTS) 20 1N5817 CRSH1-2 CRSH2-2 1N5820 30 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 CRSH1-4 CRSH2-4 1N5822


    Original
    DO-15 DO-201AD DO-41* 1N5817 1N5820 1N5818 1N5821 1N5819 1N5822 CRSH1-10 Schottky 100-fp CRSH5-6 100V 25A schottky CRSH2-3 1N5817 1N5818 1N5819 1N5820 1N5821 PDF

    1N5822 PACKAGE

    Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original
    1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5822 PACKAGE 1N5821 half wave rectifier LLC 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL PDF

    FULL WAVE RECTIFIER CIRCUITS

    Abstract: schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5820 1N5821 1N5822
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


    Original
    1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 FULL WAVE RECTIFIER CIRCUITS schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5821 PDF

    1N5820

    Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original
    1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G DIODE T28 PDF

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V Tj max. 125 °C DO-201AD Features Typical Applications • • • •


    Original
    1N5820, 1N5821 1N5822 DO-201AD DO-201AD J-STD-002B JESD22-B102s 08-Apr-05 1N5821 PDF

    24v 2a smps

    Abstract: LT1170 boost converter 12v dc 24V 20A SMPS ZTX107 ZTX107 transistor 24v 5a smps LT1170 boost converter dc LT1170 SMPS 24V ZTX949
    Text: Design Note 33 Issue 1 April 1996 Isolating High Side Switch for Thermal Printer SMPS R1 L1 +12V d.c 60µH 68R 2.5W L2 D1 1N5821 Vin Vsw Q1 ZTX 949 +24V d.c 1.5µH R3 22k LT1170 Vfb Vc GND C1 68µF CONTROL SIGNAL 5.0V Q2 ZTX107 R6 C4 100µF C5 390µF C6 100µF


    Original
    1N5821 LT1170 ZTX107 LT1170 ZTX949 ZTX949 ZTX949, ZTX107. 24v 2a smps LT1170 boost converter 12v dc 24V 20A SMPS ZTX107 ZTX107 transistor 24v 5a smps LT1170 boost converter dc SMPS 24V PDF

    1N5821

    Abstract: 1N5820 1N5822 1n5822 trr
    Text: Product Catalog > Diodes > Schottky Barrier Rectifiers > Part Number 1N5821 product family SCHOTTKY BARRIER RECTIFIERS package type DO-201AD VRM PRV 30V Ifsm 80A IF(AV) 3.0A @Vf 0.500V @If 3.0A Trr IR 2.0mA @VR 30V Package Qty Bulk: 500pcs/Box, 12K/Ctn ; Tape : 1.2K/Reel, 4.8K/Ctn; T/B:


    Original
    1N5821 DO-201AD 500pcs/Box, 12K/Ctn 12K/Ctn. 1N5820 1N5822 1N5821 1N5820 1N5822 1n5822 trr PDF

    1N5820

    Abstract: 1N5821
    Text: SIYU R 1N5820/1N5821/1N5822 塑封肖特基二极管 PLASTIC SCHOTTKY BARRIER RECTIFIER 特征 Features DO-27 •大电流承受能力。High Current Capability ·正向压降低。Low Forward Voltage Drop 1.0 25.4 MIN ·高温焊接保证 .052(1.3) DIA .048(1.2)


    Original
    1N5820/1N5821/1N5822 DO-27 1N5821 1N5822 1N5820 1N5820 1N5821 PDF

    1n5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V Tj max. 125 °C DO-201AD Features Typical Applications • • • •


    Original
    1N5820, 1N5821 1N5822 DO-201AD DO-201AD J-STD-002B JESD22-B102ltage 13-Jul-05 1n5821 PDF

    FULL WAVE bridge RECTIFIER CIRCUITS

    Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


    Original
    1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 FULL WAVE bridge RECTIFIER CIRCUITS 1N5821 TP2050 1N5820-D Motorola 1N5820 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Rectifiers 1.0 to 75 Amperes 20 to 60 Volts 1.0 lo AMPS « ta <°C) 3.0 25 25 25 25 25 50 75 80 ^ IFSM (AM PS) 2.0 Î CASE tn DO-41 * VRRM (VOLTS) 7 DO-201 AD 20 1N5817 CRSH1-2 CRSH2-2 1N5820 30 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 CRSH1-4 CRSH2-4


    OCR Scan
    1N5817 1N5818 1N5819 DO-41 DO-201 1N5820 1N5821 1N5822 DO-41 PDF

    1N5B22

    Abstract: lm 5821 IN5822
    Text: 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P M M O T O R O L A I) ij s iy ; n ( * r ^ D a t a S h e p i S C H O T T K Y B A R R IE R A X I A L LE A D R E C T IF IE R S . . e m p lo yin g power diode. oxid e in The S c h o t t k y B arrier S tate-of-the-art


    OCR Scan
    1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P 1N5B22 lm 5821 IN5822 PDF

    cn5825

    Abstract: No abstract text available
    Text: Schottky Rectifiers 1.0 to 75 Amperes 20 to 60 Volts lo AMPS @ t a (°C) IFSM (AMPS) // r 1.0 25 50 25 25 DO-41 * CASE VRRM (VOLTS) 2.0 3.0 25 75 25 80 D O-15 DO-201 AD 20 1N5817 CRSH1-2 CRSH2-2 1N5820 30 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 CRSH1-4 CRSH2-4


    OCR Scan
    1N5817 1N5818 1N5819 DO-41 DO-201 1N5820 1N5821 1N5822 DO-41 with75V cn5825 PDF

    SR360

    Abstract: sr52 1N5818
    Text: \ I O {A 1.0 PACKAGE \ OUTLINE \ mm/Typ.) D0-41 R-l 0.6 D0-201AD J 0.8 — 2.9 - I - 2-4 "]— 7 5.0 L —,I (V o lts ) i- J n \ •— 1.2 8.8 — I j-2.6 \ Vrrm 5.0 ; 3.0 J-5.3 . i 20 1S20 1N5817 SRI 20 1N5820 SR320 SR520 30 1S30 1N5818 SR130 1N5821 SR330


    OCR Scan
    D0-41 D0-201AD 1N5817 1N5818 1N5819 SR130 SR150 SR160 1N5820 1N5821 SR360 sr52 PDF

    n5822

    Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan
    1N5820/D 1N5820 1N5821 1N5822 1N5B22 n5822 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820 PDF

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


    OCR Scan
    1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1 PDF

    CRSH30-4

    Abstract: CRSH30 CN5825
    Text: Schottky Rectifiers 1.0 to 75 Amperes 20 to 60 Volts 2.0 1.0 lo AMPS @ Ta (°C) 25 25 IFSM (AMPS) 25 50 VRRM (VOLTS) Vf m ax ! 71/ DO-41 * CASE 3.0 25 25 75 80 D O-15 DO-201 AD 20 1N5817 CRSH1-2 CRSH2-2 1N5820 30 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 CRSH1-4


    OCR Scan
    DO-41 DO-201 1N5820 1N5821 1N5822 1N5817 1N5818 1N5819 DO-41 CRSH25-2 CRSH30-4 CRSH30 CN5825 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan
    1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 1N5821 PDF

    CRSH2-3

    Abstract: CRSH2-4 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822
    Text: Schottky Rectifiers 1.0 to 75 Amperes 20 to 60 Volts 1.0 o (AMPS 2.0 3.0 Ta (oC) 25 25 25 25 IFSM (AMPS) 25 50 75 80 71I DO-41 * CASE VRRM (VOLTS) DO-15 DO-201 AD 20 1N5817 CRSH1-2 CRSH2-2 1N5820 30 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 CRSH1-4 CRSH2-4


    OCR Scan
    DO-41 DO-15 DO-201 1N5817 1N5820 1N5818 1N5821 1N5819 1N5822 DO-41SP CRSH2-3 CRSH2-4 1N5820 1N5821 1N5822 PDF