3140 rectifier
Abstract: 1N5831 1N5b 1N5830 1N5829
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 1N5829 1N5830 1N5831 D esigner's D ata S h eet S w it c h m o d e P o w e r R e c tifie r s . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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1N5829
1N5830
1N5831
1N5831
3140 rectifier
1N5b
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1N5831
Abstract: E5 sot223 1N5829
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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prop30
DO-35
1N5831
E5 sot223
1N5829
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1N5831
Abstract: MN5830 1n5829 MN5829 1N5631 1N5830
Text: MOTOROLA SC DIODES/OPTO b4E D • b3b7ESS 00flb27S 7bT « M O T ? MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA 1N 5829 1N 5830 1N5831 M BR5831H, H1 Designer's Data Sheet S w itc h m o d e P o w e r R e c tifie rs . employing the Schottky Barrier principle in a large area metal-to-silicon power
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OCR Scan
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00flb27S
1N5831
MN5830
1n5829
MN5829
1N5631
1N5830
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