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    POWER MOSFET IRF511 Search Results

    POWER MOSFET IRF511 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET IRF511 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF511R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)4.0# @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43 Minimum Operating Temp (øC)-55õ


    Original     		IRF511R PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF511 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)4.0 @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43 Minimum Operating Temp (øC)-55õ


    Original     		IRF511 PDF

    IRF510

    Abstract: IRF510 MOSFET transistor equivalent irf510 irf510 pdf switch irf510 datasheet IRF511 transistor irf510 IRF512 IRF510-2 TA17441
    Text: IRF510, IRF511, IRF512, IRF513 Semiconductor 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF510, IRF511, IRF512, IRF513 IRF510 IRF510 MOSFET transistor equivalent irf510 irf510 pdf switch irf510 datasheet IRF511 transistor irf510 IRF512 IRF510-2 TA17441 PDF

    IRF510

    Abstract: IRF511 IRF512 power mosfet irf511 irf510 power IRF513 TA17441 TB334 IRF510 MOSFET IRF510-2
    Text: IRF510, IRF511, IRF512, IRF513 S E M I C O N D U C T O R 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF510, IRF511, IRF512, IRF513 IRF510 IRF511 IRF512 power mosfet irf511 irf510 power IRF513 TA17441 TB334 IRF510 MOSFET IRF510-2 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF

    transistor irf510

    Abstract: IRF510 IRF510 MOSFET IRF510N OA116 IRF-510 D84BL2 IRF511 MOSFET IRF510 CC174
    Text: IRF510,511 D84BL2.K2 FU? HELD EFFECT POWER TRANSISTOR 4.0 AMPERES 100, 60 VOLTS FlDS ON = 0.6 n The IRF510,511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing G E’s advanced Power DMOS tech­ nology to achieve low on-resistance with excellent device


    OCR Scan     		IRF510 D84BL2 IRF510, IRF510 Tc-25Â 100ms VGS-10V transistor irf510 IRF510 MOSFET IRF510N OA116 IRF-510 IRF511 MOSFET IRF510 CC174 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N PDF

    MOSFET IRF 570

    Abstract: IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola
    Text: MOTOROLA IRF510 IRF511 IRF512 IRF513 SEMICONDUCTOR TECHNICAL DATA Part Num ber v Ds N-CHANNEL ENHANCEMENT-MO DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR IRF510 100 V 0.6 n IRF511 60 V 0.6 0 4.0 A These TM OS Power FETs are designed for low voltage, high


    OCR Scan     		IRF510 IRF511 IRF512 IRF513 MOSFET IRF 570 IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola PDF

    IRF510 application note

    Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
    Text: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513


    OCR Scan     		S54S2 IRF510 IRF511 IRF513 O-220AB C-189 IRF510, IRF511, IRF512, IRF513 IRF510 application note VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 PDF

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    IRF510

    Abstract: IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET IRF512 RELAY HGS RF510 IRF513
    Text: Standard Power MOSFETs- IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N -C H A N N EL E N H AN C E M E N T MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 3.5A and 4.0A, 60V-100V


    OCR Scan     		IRF510, IRF511, IRF512, IRF513 0V-100V IRF512 IFIF513 RF510 IRF510 IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET RELAY HGS RF510 IRF513 PDF

    1rf510

    Abstract: 1RF51
    Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ


    OCR Scan     		M3DE271 IRF510/511/512/513 IRF51OR/511R/512R/513R IRF510, IRF511, IRF512, IRF513 IRF510R, IRF511R, IRF512R 1rf510 1RF51 PDF

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 PDF

    Transistor c 4138

    Abstract: TIP36 Application Note RFK25 IRF540 p channel
    Text: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback


    OCR Scan     		UC1835 UC1836 UC2835 UC2836 UC3835 UC3836 TIP30 D41D4 TIP32 D45C2 Transistor c 4138 TIP36 Application Note RFK25 IRF540 p channel PDF

    IRF511

    Abstract: IRF510 IRF510 MOSFET IRF511 MOSFET 250M rectifier diode bbc DIODE BBC MOSFET IRF510
    Text: N-CHANNEL POWER MOSFETS IRF510/511 FEATURES • L o w e r R d s <o n • Improved inductive raggedness • Fast switching times • Rugged poiysiiicon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF510/511 IRF510 IRF511 71b414S IRF510 MOSFET IRF511 MOSFET 250M rectifier diode bbc DIODE BBC MOSFET IRF510 PDF

    IRF510

    Abstract: IRF510 MOSFET IRF512 irf510 ir 05b diode
    Text: N-CHANNEL POWER MOSFETS IRF510/511/512/513 FEATURES • • • • • • • Lo w er R ds on Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lysilico n g a te cell s tru ctu re Lo w er in p u t c a p a c ita n c e E x te n d e d sa fe o p e ra tin g area


    OCR Scan     		IRF510/511/512/513 IRF510 IRF512 IRF513 IRF510 MOSFET irf510 ir 05b diode PDF

    1RF511

    Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
    Text: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*


    OCR Scan     		IRF510/511/512/513 IRF510R/511R/512R/513R IRFS10, IRF511, IRF512, IRF513 IRF510R, 1RF511R, IRF512R IRF513R 1RF511 IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51 PDF

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 PDF