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    POWER MOSFET 350V 30A TO 247 Search Results

    POWER MOSFET 350V 30A TO 247 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 350V 30A TO 247 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power mosfet 350v 30a to 247

    Abstract: No abstract text available
    Text: Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS on D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


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    PDF IXKK85N60C O-264 ID100 power mosfet 350v 30a to 247

    47N60C

    Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


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    PDF 47N60C O-247 E72873 ID100 20080523a 47N60C 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100

    47N60C

    Abstract: No abstract text available
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


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    PDF 47N60C O-247 E72873 ID100 20080523a 47N60C

    Untitled

    Abstract: No abstract text available
    Text: APT47N65BC3 650V 47A 0.070 Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.


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    PDF APT47N65BC3 O-247 APT30DF60

    DD2030

    Abstract: 650V power mosfet 350v 30a to 247
    Text: APT47N65BC3 600V 47A 0.070Ω Super Junction MOSFET TO COOLMOS -24 7 Power Semiconductors D3 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package


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    PDF APT47N65BC3 O-247 DD2030 650V power mosfet 350v 30a to 247

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


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    PDF APT30GP60BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT47N65BC3 650V 47A 0.070Ω Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.


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    PDF APT47N65BC3 O-247 APT47N65BC3 APT30DF60

    30GP60BDF1

    Abstract: No abstract text available
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


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    PDF APT30GP60BDF1 O-247 T0-247 30GP60BDF1

    30GP60BDF1

    Abstract: 30GP
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


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    PDF APT30GP60BDF1 O-247 T0-247 30GP60BDF1 30GP

    APT30GP60BDF1

    Abstract: No abstract text available
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


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    PDF APT30GP60BDF1 O-247 APT30GP60BDF1

    Untitled

    Abstract: No abstract text available
    Text: APT47N60BC3 G APT47N60SC3(G) 600V 47A 0.070 TO Super Junction MOSFET -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package.


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    PDF APT47N60BC3 APT47N60SC3 O-247

    APT47N60BC3

    Abstract: APT47N60SC3
    Text: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS


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    PDF APT47N60BC3 APT47N60SC3 O-247 O-247 APT47N60BC3 APT47N60SC3

    94n60

    Abstract: IXKK94N60C3 94N60C3 UPS SIEMENS ID100
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C3 VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1


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    PDF 94N60C3 ID100 O-264 728B1 065B1 123B1 94n60 IXKK94N60C3 94N60C3 UPS SIEMENS ID100

    85N60C

    Abstract: CoolMOS Power Transistor ID100 UPS SIEMENS
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 85N60C VDSS = 600 V = 85 A ID25 Ω RDS on = 36 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings TO-264 VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20


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    PDF 85N60C ID100 O-264 85N60C CoolMOS Power Transistor ID100 UPS SIEMENS

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25


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    PDF 94N60C ID100 O-264 reduce80 728B1 065B1 123B1

    Untitled

    Abstract: No abstract text available
    Text: APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω Super Junction MOSFET COOL MOS Po we r Se miconduc tors • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package


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    PDF APT47N65BC3 APT47N65SC3 O-247

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


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    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    CS5170

    Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
    Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL CS5170 MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60

    ANA 618

    Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
    Text: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D ANA 618 voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    complementary MOSFET 2sk

    Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
    Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V


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    PDF DC12V DC24V DC48V AC100V AC200V 0-60V) 2SJ487 2SK2816 2SJ488 2SJ489 complementary MOSFET 2sk transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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