Ignition Driver IC
Abstract: programmable ignition control PT5615 ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition
Text: PT5615 Ballast Control IC DESCRIPTION The PT5615 is a ballast control IC, with the 650V half-bridge driver and full protections, designed to drive all types of fluorescent lamps. The features such as programmable preheat time and frequency, programmable and precise run frequency, self-adapting
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PT5615
Ignition Driver IC
programmable ignition control
ptc fluorescent ballast
HALF-BRIDGE DRIVER
PT5615-S
high frequency ignition
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FCH76N60
Abstract: No abstract text available
Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH76N60N
FCH76N60N
218nC)
FCH76N60
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Untitled
Abstract: No abstract text available
Text: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS230AE2
5A/30A*
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated
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Untitled
Abstract: No abstract text available
Text: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and
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APT45GR65BSCD10
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Untitled
Abstract: No abstract text available
Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX2 Series ●General The PWM type DC/DC converter BM2PXX2 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX2 supports both isolated and non-isolated
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STP9NC65
Abstract: STP9NC65FP
Text: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP9NC65
STP9NC65FP
O-220/TO-220FP
O-220
O-220FP
STP9NC65
STP9NC65FP
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ap2764a
Abstract: No abstract text available
Text: AP2764AP-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 1.1Ω ID 9A G S Description AP2764A series are specially designed as main switching devices for
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AP2764AP-A
AP2764A
265VAC
O-220
O-220
2764AP
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09N70P
Abstract: 09n70 AP09N70P-A 09N7
Text: AP09N70P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ 100% Avalanche Test D BVDSS 650V RDS ON 0.75Ω ▼ Fast Switching ▼ Simple Drive Requirement GG ID ▼ RoHS Compliant 9A S S Description The TO-220 package is widely preferred for all commercial-industrial
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AP09N70P-A
O-220
O-220
09N70P
09N70P
09n70
AP09N70P-A
09N7
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STW45NM60
Abstract: No abstract text available
Text: STW45NM60 N-CHANNEL 650V @Tjmax - 0.09Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM60 VDSS @Tjmax RDS(on) ID 650V < 0.11Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW45NM60
O-247
STW45NM60
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Untitled
Abstract: No abstract text available
Text: MB09N65B0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB09N65B is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter
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MB09N65B0000000
MB09N65B
D020210
O-263
800pcs
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5N65
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 4.5A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
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O-252
O-251
O-220
QW-R502-592
5N65
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7n65f
Abstract: UTC7N65 TO-220F2 7n65
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220
O-220F1
O-220F2
QW-R502-104
7n65f
UTC7N65
TO-220F2
7n65
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UTC7N65
Abstract: 7n65 7N65L-TQ2-T
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220
O-220F
O-220F1
QW-R502-104
UTC7N65
7n65
7N65L-TQ2-T
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7N65A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand
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7N65A
7N65A
QW-R502-585
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586A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65Z Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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7N65Z
7N65Z
QW-R502-586
586A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-370
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Untitled
Abstract: No abstract text available
Text: SIK04N65 4A , 650V , RDS ON 2.6Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free 2 TO-262(I -Pack) DESCRIPTION The SIK04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SIK04N65
O-262
SIK04N65
11-Jun-2013
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SSE12N65SL
Abstract: MosFET
Text: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSE12N65SL
O-220P
SSE12N65SL
07-Nov-2013
MosFET
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fgh75t65
Abstract: FGH75T65UPD fgh75t65up fgh75t
Text: FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description 175oC • Maximum Junction Temperature : TJ = Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Solar Inverter , UPS and Digital Power Generator
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FGH75T65UPD
FGH75T65UPD
175oC
fgh75t65
fgh75t65up
fgh75t
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mosfet 600V 16A
Abstract: FCP16N60 FCPF16N60
Text: SuperFETTM FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCP16N60
FCPF16N60
FCPF16N60
mosfet 600V 16A
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AP10N70
Abstract: No abstract text available
Text: AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated Test D ▼ Fast Switching Performance ▼ Simple Drive Requirement 650V RDS ON 0.6Ω ID G ▼ RoHS Compliant BVDSS 10A S
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65L Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged
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2N65L
2N65L
QW-R502-580
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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2N65K-MT
2N65K-MT
2N65KL-TA3-T
2N65KG-TA3-T
QW-R502-B04
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