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    POWER MOSFET 100A Search Results

    POWER MOSFET 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0602DPN-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 60V 100A 3.9Mohm To-220Ab Visit Renesas Electronics Corporation
    NP100N055PUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 100A 3.25mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    N0413N-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 40V 100A 3.3Mohm To-263 Visit Renesas Electronics Corporation
    N0434N-S23-AY Renesas Electronics Corporation Nch Single Power Mosfet 40V 100A 3.7Mohm To-262 Visit Renesas Electronics Corporation
    N0412N-S19-AY Renesas Electronics Corporation Nch Single Power Mosfet 40V 100A 3.7Mohm To-220 Visit Renesas Electronics Corporation

    POWER MOSFET 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 50V 100A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching


    Original     		PDF UTT100N05 UTT100N05 O-220 UTT100N05L-TA3-T UTT100N05G-TA3-T QW-R502-688 MOSFET 50V 100A

    2N7225U

    Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
    Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PDF PD-91549B IRFN250 JANTX2N7225U JANTXV2N7225U MIL-PRF-19500/592] 2N7225U SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225

    2n7224U

    Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
    Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PDF PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U MIL-PRF-19500/592] 100Volt, 2n7224U IRFN150 JANTX2N7224U JANTXV2N7224U

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		PDF UTT100P03 UTT100P03 UTT100P03L-TA3-T UTT100P03G-TA3-T QW-R502-697

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    SMD1P

    Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
    Text: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PDF PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U MIL-PRF-19500/596] SMD1P 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44

    2sk3271

    Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
    Text: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3271-01 2sk3271 MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874

    2N7236U

    Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
    Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PDF PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U MIL-PRF-19500/595] 2N7236U smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U

    POWER MOSFET

    Abstract: power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET
    Text: 2SK3270-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3270-01 O-220AB -51MHz POWER MOSFET power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET

    POWER MOSFET

    Abstract: mosfet power amplifier 2SK3273-01MR mosfet low vgs
    Text: 2SK3273-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3273-01MR O-220F POWER MOSFET mosfet power amplifier 2SK3273-01MR mosfet low vgs

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A

    UF740L-TA3-T

    Abstract: UF740 UF740-TA3-T UF740-TF3-T 25V 1A power MOSFET TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD UF740 MOSFET 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UF740 power MOSFET is designed for high voltage, high speed power switching applications such as switching power supplies, switching adaptors etc.


    Original     		PDF UF740 O-220 UF740 O-220F UF740L UF740-TA3-T UF740L-TA3-T UF740-TF3-T UF740L-TF3-T UF740L-TA3-T UF740-TA3-T UF740-TF3-T 25V 1A power MOSFET TO-220

    F16N06

    Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
    Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET


    Original     		PDF RFD16 N06SM) O251AA, O252AA) RFD16N06, RFD16N06SM 1e-30 07e-3 19e-7) F16N06 N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original     		PDF UF640-P 18OHM, UF640-P O-220 QW-R502-A17

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF830 UF830L-TA3-T UF830G-TA3-T O-220 UF830L-TF3-T UF830G-TF3-T O-220F UF830L-TF1-T QW-R502-046

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching


    Original     		PDF UF830Z UF830ZL-TF3-T UF830ZG-TF3-T QW-R502-612

    specifications of power mosfet

    Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF840 O-220 O-220F1 O-220F2 O-220F O-262 O-263 QW-R502-047 specifications of power mosfet N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

    UF840

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T UF840L-TF3T-T UF840

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998


    Original     		PDF RFF70N06 RFF70N06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    UF830L

    Abstract: UF830G UF830 max3103
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF830 O-220 O-220F O-262 O-251 O-252 UF830L-TA3-T UF830G-TA3-Tt QW-R502-046 UF830L UF830G UF830 max3103

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    transistor irf510

    Abstract: irf510 IRF510 MOSFET IRF510 Power Mosfet transistor
    Text: IRF510 Data Sheet November 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET [ /Title IRF51 0 /Subject (5.6A, 100V, 0.540 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark


    Original     		PDF IRF510 IRF51 O220AB IRF510 transistor irf510 IRF510 MOSFET IRF510 Power Mosfet transistor