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pspice model Abstract: F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 RFD16N06 RFD16N06SM mosfet motor dc 48v Text: RFD16N06, RFD16N06SM S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 60V JEDEC TO-251AA • rDS ON = 0.047Ω SOURCE DRAIN GATE DRAIN (FLANGE) • Temperature Compensating PSPICE Model	Original	RFD16N06, RFD16N06SM O-251AA 175oC O-252AA RFD16N06 RFD16N06SM 1e-30 07e-3 19e-7) pspice model F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 mosfet motor dc 48v	PDF
F16N06 Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334 Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET	Original	RFD16 N06SM) O251AA, O252AA) RFD16N06, RFD16N06SM 1e-30 07e-3 19e-7) F16N06 N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334	PDF
F16N06 Abstract: 00u2 107E3 *16N06 16N06 Text: RFD16N06, RFD16N06SM fu HARRIS S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 6 0V • rDS<ON = 0 .0 4 7 U D R A IN F L A N G E ) • Temperature Compensating PSPICE Model	OCR Scan	RFD16N06, RFD16N06SM O-251AA O-252AA RFD16N06 RFD16N06SM O-251AA O-252AA F16N06 F16N06 00u2 107E3 *16N06 16N06	PDF
Untitled Abstract: No abstract text available Text: Hormis S RFD16N06, RFD16N06SM Semiconductor y 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET September 1998 Features Description • 16A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti	OCR Scan	RFD16N06, RFD16N06SM 1e-10 1e-30 07e-3 19e-7) 45e-3 66e-5) 25e-3	PDF