Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and
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UF830Z
O-220F
UF830ZL-TF3-T
UF830ZG-TF3-T
O-220F
QW-R502-612
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830-F Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF830-F
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220F
QW-R502-A94
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uf830l
Abstract: UF830G UF830
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay
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UF830
O-220
O-220F
O-262
O-263
O-251
O-252
UF830L-TAt
QW-R502-046
uf830l
UF830G
UF830
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF830
O-220
UF830L
UF830-TA3-T
UF830es
QW-R502-046
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF830
O-220
O-220F
UF830L
UF830-TA3-T
UF830L-TA3-Tat
QW-R502-046
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF830
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220F
UF830L-TF1-T
QW-R502-046
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching
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UF830Z
UF830ZL-TF3-T
UF830ZG-TF3-T
QW-R502-612
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF830
O-220
O-220F1
O-220F2
O-252
O-251
O-262
O-220F
O-263
QW-R502-046
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S1-M10
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay
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UF830
O-220
O-220F
O-220F1
O-262
O-263
O-251
O-252
QW-R502-046
S1-M10
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uf830l
Abstract: RGS12 UF830 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET 400V TO-220 mosfet TEST UF830L-TN3-R uf830l-ta3-t RGS-12 N-Channel mosfet 400v to220
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF830
UF830L
UF830-TA3-T
UF830L-TA3-T
UF830-TF3-T
UF830L-TF3-T
QW-R502-046
uf830l
RGS12
UF830
5V GATE TO SOURCE VOLTAGE MOSFET
MOSFET 400V TO-220
mosfet TEST
UF830L-TN3-R
uf830l-ta3-t
RGS-12
N-Channel mosfet 400v to220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830-E Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF830-E
O-220
UF830L-TA3-T
UF830G-TA3-T
QW-R502-993
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UF830L
Abstract: UF830G UF830 max3103
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF830
O-220
O-220F
O-262
O-251
O-252
UF830L-TA3-T
UF830G-TA3-Tt
QW-R502-046
UF830L
UF830G
UF830
max3103
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF830
O-220
O-220F
O-220F1
O-263
O-220F2
O-262
O-251
O-252
UF830L-Tat
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830-F Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF830-F
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220at
QW-R502-A94
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830K-MT Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators,
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UF830K-MT
UF830K-MT
UF830KL-TA3-T
UF830KG-TA3-T
UF830KL-TF3-T
UF830KG-TF3-T
QW-R209-030
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Untitled
Abstract: No abstract text available
Text: UF810-UF880 Ultra Fast Rectifiers VOLTAGE RANGE: 100 - 800 V CURRENT: 8.0A TO - 220AC 2.8± 0.1 Features Metal-Semiconductor junction with guard ring 4.5± 0.2 10.2± 0.2 1.4± 0.2 Epitaxial construction φ 3.8± 0.15 xxx 19.0± 0.5 High surge capability
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UF810-UF880
220AC
O--220AC
UF810
UF820
UF830
UF840
UF860
UF880
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f830
Abstract: UF830 UF840 UF850 uf85
Text: Ultra Fast FRecovery Rectifiers UF830 U r 850 -C Dim. Inches Minimum -B A B C D E F G H J K L M N P Base Cathode J. •Ji .390 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .080 .028 .045 M illim eter Maximum Minimum .415 .055 .190 .260 .650 .155 .120
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UF830
UF850
T0-220AC
UF840
UF850
30nce
f830
uf85
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UHVP806
Abstract: PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10
Text: Micmsemj Ultra Fast Rectifiers UFR Part Number UES1404 UHVP802 UF830 RSF0840 UHVP804 UF840 UF850 RSF0860 UHVP806 UF860 UF870 UF880 1N5812 1N5813 1N6657 1N6657R 1N5815 1N66S8 1N6658R 1N6659 1N6659R 1N6079 1N6080 UFT121Q 1N6081 UFT1215 UFT1220 UFT1230 UFT1240
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-220AC
O-220
O-254
UHVP806
PHILIPS+23967
21159
TO-254
23967
RSF0840
UFR-10
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UF850
Abstract: UF830 UF840 316-0O
Text: Ultra Fast Recovery Rectifiers UF830 —C UF850 Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode J . dt .3 90 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .0 80 .028 .0 45 M illim eter Maximum Minimum .415 .0 55 .190 .2 60 .650 .155
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UF830
UF850
T0-220AC
UF840
UF850
316-0O
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