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    PNP DARLINGTON 0.5A 60V Search Results

    PNP DARLINGTON 0.5A 60V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    PS2502L-1-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502L-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation

    PNP DARLINGTON 0.5A 60V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT60AF

    Abstract: BDT60BF BDT60CF BDT60F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors DESCRIPTION •DC Current Gain -hFE = 750 Min @ IC= -1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF


    Original     		PDF BDT60F; BDT60AF -100V BDT60BF; -120V BDT60CF BDT61F/61AF/61BF/61CF BDT60F BDT60BF BDT60AF BDT60BF BDT60CF BDT60F

    TIP125

    Abstract: TIP127 TIP126
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION •With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier


    Original     		PDF TIP125/126/127 O-220C TIP120/121/122 TIP125 TIP126 TIP127 -100V, TIP125 TIP127 TIP126

    TIP125

    Abstract: TIP126 TIP127
    Text: Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION ・With TO-220C package ・DARLNGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type TIP120/121/122 APPLICATIONS


    Original     		PDF TIP125/126/127 O-220C TIP120/121/122 TIP125 TIP126 TIP127 TIP125 TIP126 TIP127

    TIP125

    Abstract: TIP126 TIP127 tip127 data
    Text: Darlington Power Transistors PNP TIP125/126/127 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:


    Original     		PDF TIP125/126/127 O-220 O-220, MIL-STD-202, TIP125 TIP126 TIP127 TIP125 TIP126 TIP127 tip127 data

    tip122 transistor

    Abstract: TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121
    Text: TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: • Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126


    Original     		PDF TIP120, TIP125 TIP121, TIP126 TIP122, TIP127. tip122 transistor TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21SMD • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS21SMD O-276AB)

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS21 O-220 300us, O220M O-257AB)

    BDS21SMD

    Abstract: LE17
    Text: SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21SMD • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS21SMD O-276AB) BDS21SMD LE17

    pnp darlington array

    Abstract: NPN darlington array DN8690
    Text: Others DN8690 4-circuit Darlington Driver Array High Breakdown Voltage : 60V, Large Drive Current : 1.5A 14 4 13 5 12 • Features 6 11 • 4 circuits • High breakdown voltage : VCE(SUS) = 60V (min) • Large output current : IO = 1.5A (max) • Built-in output clamp diode : VR = 60V(min)


    Original     		PDF DN8690 DN8690 16-pin pnp darlington array NPN darlington array

    BDS21

    Abstract: LE17 257AB
    Text: SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS21 O-220 300us, O220M O-257AB) BDS21 LE17 257AB

    TIP127 application

    Abstract: TIP127
    Text: TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP120/121/122 Equivalent Circuit C B TO-220 1 1.Base R1 2.Collector Absolute Maximum Ratings* Symbol VCBO 3.Emitter R1 @ 8kW R2 @ 0.12k W


    Original     		PDF TIP125/TIP126/TIP127 TIP120/121/122 O-220 TIP125 TIP126 TIP127 TIP125/TIP126/TIP127 TIP127 application TIP127

    SDH03

    Abstract: No abstract text available
    Text: SDH03 PNP + NPN Darlington H-bridge External dimensions E Absolute maximum ratings ••• SD Ta=25°C Ratings Symbol NPN PNP Unit VCBO 100 –60 V VCEO 100 –60 V VEBO 6 –6 V IC 1.5 –1.5 A ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW≤1ms, Du≤10%)


    Original     		PDF SDH03 Du100% SDH03

    TIP125

    Abstract: TIP127 TIP126 NPN Transistor TO220 VCEO 80V 100V TIP127 Application Note NPN Transistor VCEO 80V 100V DARLINGTON TIP125 transistor NPN Darlington transistor npn 60v 3a to220
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP125/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit -60 V : TIP126 -80 V : TIP127 Collector Emitter Voltage -120 V


    Original     		PDF TIP125/126/127 O-220 TIP120/121/122 TIP126 TIP127 TIP125 TIP125 TIP127 TIP126 NPN Transistor TO220 VCEO 80V 100V TIP127 Application Note NPN Transistor VCEO 80V 100V DARLINGTON TIP125 transistor NPN Darlington transistor npn 60v 3a to220

    Untitled

    Abstract: No abstract text available
    Text: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220


    Original     		PDF TIP120 TIP125 O-220 TIP120 TIP125 TIP121 TIP126 TIP122 TIP127

    SDH03

    Abstract: No abstract text available
    Text: SDH03 PNP + NPN Darlington H-bridge External dimensions E Absolute maximum ratings ••• SD Ta=25°C Specification Symbol NPN PNP Unit VCBO 100 –60 V VCEO 100 –60 V VEBO 6 –6 V IC 1.5 –1.5 A ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW≤1ms, Du≤10%)


    Original     		PDF SDH03 Du100% SDH03

    Diode GP 514

    Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A
    Text: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF


    OCR Scan     		PDF 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 Diode GP 514 pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    KS0882

    Abstract: KSB772 KSB794 N500 OS5000
    Text: SAMSUNG SEMICONDUCTOR INC KSB772 1ME D | TTbMma 0007515 5 PNP EPITAXIAL SILICON TRANSISTOR T-33-17 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to KSD882 \ ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage


    OCR Scan     		PDF 71b4ma KSB772 KS0882 T-33-17 O-126 KS0882 KSB794 N500 OS5000

    TIP177

    Abstract: LB 122 transistor TIP 126 tip127
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage :TIP125 Rating : TIP 126 ' TIP177 Collector Emitter Voltage


    OCR Scan     		PDF TIP125 TIP177 TIP126 TIP127 TI000 -100V, -12mA -20mA LB 122 transistor TIP 126

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Symbol : KSB794 Rating Unit V cbO - 60 V VcBO - 80 V VcEO - 60 V VcEO


    OCR Scan     		PDF KSB794/795 KSB794 KSB795 KSB794 350ns,