Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
|
PDF
|
TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
|
Original
|
M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
|
PDF
|
TSOP32 FOOTPRINT
Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave
|
Original
|
NL-5652
FLNVRAM/1000
TSOP32 FOOTPRINT
NVRAM 1KB
SOH28 PCB FOOTPRINT
M41T81
m48t35
M48T86
M48Z128
M48Z128V
M48Z128Y
M48Z129V
|
PDF
|
asm eagle
Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:
|
Original
|
BRMEMSEL/0997
asm eagle
M28F101
M28F102
M28F201
M28F256
M28F512
texas 4mb dram
M27C1024
Parallel NOR Flash Market
MBX860
|
PDF
|
m48t35
Abstract: NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V
Text: ZEROPOWER and TIMEKEEPER NVRAMs BATTERY-BACKED SRAMS, OPTIONAL CLOCK/CALENDAR ZEROPOWER products integrate low power SRAMs with a powerfail control circuit and a long-life lithium battery. The power-fail circuit monitors the external power supply voltage. If this falls below
|
Original
|
programmable33-3)
FLZERO/1198
286-CJ103
m48t35
NVRAM 1KB
M48Z02
M48Z08
M48Z12
M48Z128
M48Z128Y
M48Z18
M48Z35
M48Z35V
|
PDF
|
M48Z2M1
Abstract: M48Z2M1Y a20 Schottky diode st
Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT
|
Original
|
M48Z2M1
M48Z2M1Y
PMLDIP36
M48Z2M1:
M48Z2M1Y:
M48Z2M1/2M1Y
M48Z2M1
M48Z2M1Y
a20 Schottky diode st
|
PDF
|
M48T201
Abstract: M48T513V M48T513Y
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
M48T201
M48T513V
M48T513Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
M48T513Y
M48T513V
512Kb
M48T513Y:
M48T513V:
PMLDIP36
|
PDF
|
M48Z2M1
Abstract: M48Z2M1Y
Text: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT
|
Original
|
M48Z2M1
M48Z2M1Y
M48Z2M1:
M48Z2M1Y:
M48Z2M1/2M1Y
A0-A20
PMLDIP36
M48Z2M1
M48Z2M1Y
|
PDF
|
footprint so44
Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad
|
Original
|
operat911)
D-90449
BRMEMSEL/0699
footprint so44
9977
IC SOCKET TSOP48
TSOP32 FOOTPRINT
ST1355
52 pin plcc socket
ST19GF34
PSDSoft
ST19AF08
serial flash 256Mb fast erase spi
|
PDF
|
M48T201
Abstract: M48T513V M48T513Y Backup output protect 36Pin-DIP
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
AI02307
A0-A18
M48T513Y)
M48T513V)
PMLDIP36
M48T201
M48T513V
M48T513Y
Backup output protect
36Pin-DIP
|
PDF
|
PJ 1179
Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a
|
Original
|
|
PDF
|
M48T201
Abstract: M48T513V M48T513Y
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
AI02307
A0-A18
M48T513Y)
M48T513V)
PMLDIP36
M48T201
M48T513V
M48T513Y
|
PDF
|
M48Z2M1
Abstract: M48Z2M1Y a20 Schottky diode st
Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT
|
Original
|
M48Z2M1
M48Z2M1Y
PMLDIP36
M48Z2M1:
M48Z2M1Y:
M48Z2M1/2M1Y
M48Z2M1
M48Z2M1Y
a20 Schottky diode st
|
PDF
|
|
|
M48Z2M1
Abstract: M48Z2M1Y
Text: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT
|
Original
|
M48Z2M1
M48Z2M1Y
M48Z2M1:
M48Z2M1Y:
PMLDIP36
M48Z2M1/2M1Y
M48Z2M1
M48Z2M1Y
|
PDF
|
TAG 9109
Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in
|
Original
|
286-CJ103
TAG 9109
M35080
M95256 equivalent
TSOP48 outline
EEPROM 16MB
NVRAM 1KB
TSOP40
"dual access" "nonvolatile memory" -RFID
ST1335
asm eagle
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48Z2M1 M48Z2M1Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16 Mb 2Mb x 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the
|
OCR Scan
|
M48Z2M1
M48Z2M1Y
48Z2M
M48Z2M1Y
LDIP36
M48Z2M1/2M1Y
204ce,
M48Z2M1,
PMLDIP36-
|
PDF
|
M48Z2M1
Abstract: M48Z2M1Y
Text: w , M48Z2M1 M 48Z 2M 1Y S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 16 Mb 2Mb X 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
|
OCR Scan
|
M48Z2M1
M48Z2M1Y
M48Z2M1:
M48Z2M1Y
2048K
M48Z2M1,
PMLDIP36
PMLDIP36
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ YEAR 2000 COMPLIANT-CENTURY REGISTER ■ BCD CODED YEAR, MONTH, DAY, DATE,
|
OCR Scan
|
M48T513Y
M48T513V
PMLDIP36
48T513Y:
48T513V:
iM48T513Y)
M48T513Y,
PMLDIP36
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48Z2M1 M48Z2M1Y SGS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER
|
OCR Scan
|
M48Z2M1
M48Z2M1Y
48Z2M
48Z2M1/2M1Y
2048K
152words
|
PDF
|
2A183
Abstract: No abstract text available
Text: M48T513Y M48T513V nZ J SG S-T H O M SO N 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL » YEAR 2000 COMPLIANT-CENTU RY REGISTER « BCD CODED YEAR, MONTH, DAY, DATE,
|
OCR Scan
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
AI02307
M48T513Y)
M48T513V)
PMLDIP36
A0-A18
M48T513Y,
2A183
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48Z2M1 M48Z2M1Y SCS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT
|
OCR Scan
|
M48Z2M1
M48Z2M1Y
M48Z2M1
M48Z2M1Y:
M48Z2M1/2M1Y
M48Z2M1,
PMLDIP36
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48Z2M1 M48Z2M1Y S G S -T H O M S O N n i ii5 in i * r a ( § s 16 Mb (2Mb x 8 ZEROPOWER® SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the
|
OCR Scan
|
M48Z2M1
M48Z2M1Y
LDIP36
M48Z2M1Y:
M48Z2M1/2M1Y
|
PDF
|
M48Z2M1
Abstract: M48Z2M1Y
Text: M48Z2M1 M 48Z 2M 1Y k7 #» RitlDÊlMIlilLIKËinSMQtÊS w , S G S -T H O M S O N 16 Mb 2Mb x 8 ZER O PO W ER SRAM P R E L IM IN A R Y D A TA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
|
OCR Scan
|
M48Z2M1
M48Z2M1Y
M48Z2M1
M48Z2M1Y
2048K
152words
M48Z2M1,
PMLDIP36
|
PDF
|