Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
PDF
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
|
M48T201
Abstract: M48T513V M48T513Y
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
PDF
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
M48T201
M48T513V
M48T513Y
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
512Kb
M48T513Y:
M48T513V:
PMLDIP36
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y* M48T513V* 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y*
M48T513V*
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|
M48T201
Abstract: M48T513V M48T513Y Backup output protect 36Pin-DIP
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
PDF
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
AI02307
A0-A18
M48T513Y)
M48T513V)
PMLDIP36
M48T201
M48T513V
M48T513Y
Backup output protect
36Pin-DIP
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|
M48T201
Abstract: M48T513V M48T513Y
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
|
Original
|
PDF
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
AI02307
A0-A18
M48T513Y)
M48T513V)
PMLDIP36
M48T201
M48T513V
M48T513Y
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
512Kb
M48T513Y:
M48T513V:
PMLDIP36
|
M48T513Y
Abstract: SOH44 44-PIN M48T513V
Text: M48T513Y M48T513V 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
512Kb
PMDIP32
M48T513Y:
M48T513V:
M48T513Y
SOH44
44-PIN
M48T513V
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y M48T513V 3.3V - 5V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|
|
FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
|
Original
|
PDF
|
M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
|
TSOP32 FOOTPRINT
Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave
|
Original
|
PDF
|
NL-5652
FLNVRAM/1000
TSOP32 FOOTPRINT
NVRAM 1KB
SOH28 PCB FOOTPRINT
M41T81
m48t35
M48T86
M48Z128
M48Z128V
M48Z128Y
M48Z129V
|
m48t35
Abstract: NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V
Text: ZEROPOWER and TIMEKEEPER NVRAMs BATTERY-BACKED SRAMS, OPTIONAL CLOCK/CALENDAR ZEROPOWER products integrate low power SRAMs with a powerfail control circuit and a long-life lithium battery. The power-fail circuit monitors the external power supply voltage. If this falls below
|
Original
|
PDF
|
programmable33-3)
FLZERO/1198
286-CJ103
m48t35
NVRAM 1KB
M48Z02
M48Z08
M48Z12
M48Z128
M48Z128Y
M48Z18
M48Z35
M48Z35V
|
footprint so44
Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad
|
Original
|
PDF
|
operat911)
D-90449
BRMEMSEL/0699
footprint so44
9977
IC SOCKET TSOP48
TSOP32 FOOTPRINT
ST1355
52 pin plcc socket
ST19GF34
PSDSoft
ST19AF08
serial flash 256Mb fast erase spi
|
14270x
Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
|
Original
|
PDF
|
AN1012
14270x
8107X
m48t35
MK48T08
Zeropower
M48Z35Y
M48Z58
M48Z58Y
AN1012
M48Z02
|
TAG 9109
Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in
|
Original
|
PDF
|
286-CJ103
TAG 9109
M35080
M95256 equivalent
TSOP48 outline
EEPROM 16MB
NVRAM 1KB
TSOP40
"dual access" "nonvolatile memory" -RFID
ST1335
asm eagle
|
BR1632 safety
Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
|
Original
|
PDF
|
AN1012
BR1632 safety
BR1632
BR1225X
mk48t08
M48T59Y equivalent
8107X
application note AN1012
m48t35
Zeropower
AN1012
|
br1632 br1225
Abstract: No abstract text available
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
|
Original
|
PDF
|
AN1012
br1632 br1225
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ YEAR 2000 COMPLIANT-CENTURY REGISTER ■ BCD CODED YEAR, MONTH, DAY, DATE,
|
OCR Scan
|
PDF
|
M48T513Y
M48T513V
PMLDIP36
48T513Y:
48T513V:
iM48T513Y)
M48T513Y,
PMLDIP36
|
2A183
Abstract: No abstract text available
Text: M48T513Y M48T513V nZ J SG S-T H O M SO N 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL » YEAR 2000 COMPLIANT-CENTU RY REGISTER « BCD CODED YEAR, MONTH, DAY, DATE,
|
OCR Scan
|
PDF
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
AI02307
M48T513Y)
M48T513V)
PMLDIP36
A0-A18
M48T513Y,
2A183
|