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    M48Z129V Price and Stock

    STMicroelectronics M48Z129V-85PM1

    IC NVSRAM 1MBIT PARALLEL 32PMDIP
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    DigiKey M48Z129V-85PM1 Tube 72
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    Newark M48Z129V-85PM1 Bulk 3
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    Quest Components M48Z129V-85PM1 2
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    M48Z129V Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M48Z129V STMicroelectronics 3.3V-5V 1 Mbit (128Kb x8) ZEROPOWER SRAM Original PDF
    M48Z129V STMicroelectronics 1 MBIT (128KB x 8) ZEROPOWER SRAM Original PDF
    M48Z129V STMicroelectronics 1 MBIT (128KB x 8) ZEROPOWER SRAM Original PDF
    M48Z129V STMicroelectronics 5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM Original PDF
    M48Z129V-70PM1 STMicroelectronics 1 Mbit (128Kb x 8) ZEROPOWER SRAM Original PDF
    M48Z129V-70PM1 STMicroelectronics 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM Original PDF
    M48Z129V-85PM1 STMicroelectronics 3.3 V, 1 MBit (128 kB x 8) ZEROPOWER SRAM Original PDF
    M48Z129V-85PM1 STMicroelectronics 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM Original PDF
    M48Z129V-85PM1 STMicroelectronics 5.0V or 3.3V, 1 Mbit (128Kb x 8) ZEROPOWER SRAM Original PDF
    M48Z129V-85PM1 STMicroelectronics Memory, Integrated Circuits (ICs), IC NVSRAM 1MBIT 85NS 32DIP Original PDF
    M48Z129V-85PM1TR STMicroelectronics 3.3 V, 1 MBit (128 kB x 8) ZEROPOWER SRAM Original PDF
    M48Z129VPM STMicroelectronics 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM Original PDF

    M48Z129V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		M48Z129Y M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y PDF

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		M48Z129Y M48Z129V M48Z129Y M48Z129V: M48Z129V PDF

    D 4242

    Abstract: No abstract text available
    Text: M48Z129Y M48Z129V 1 Mbit 128Kb x8 ZEROPOWER SRAM PRELIMINARY DATA INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER MICROPROCESSOR POWER-ON RESET


    Original     		M48Z129Y M48Z129V 128Kb M48Z129Y: M48Z129V: 128Kx8 M48Z129Y/129V D 4242 PDF

    D 4242

    Abstract: PMDIP32 M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER MICROPROCESSOR POWER-ON RESET


    Original     		M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 M48Z129Y/129V D 4242 PMDIP32 M48Z129V M48Z129Y PDF

    AN1012

    Abstract: M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION ■ MICROPROCESSOR POWER-ON RESET (RESET VALID EVEN DURING BATTERY


    Original     		M48Z129Y M48Z129V 128Kb M48Z129Y: M48Z129V: PMDIP32 AN1012 M48Z129V M48Z129Y PDF

    Untitled

    Abstract: No abstract text available
    Text: M48Z129V 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		M48Z129V PDF

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		M48Z129Y* M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y PDF

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		M48Z129Y* M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y PDF

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		M48Z129Y* M48Z129V M48Z129Y: M48Z129V: M48Z129V M48Z129Y PDF

    129Y

    Abstract: m48z129v M48Z129Y
    Text: M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER MICROPROCESSOR POWER-ON RESET


    Original     		M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 M48Z129Y/129V M48Z129Y M48Z129V AI02310 A0-A16 129Y PDF

    AN1012

    Abstract: M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION ■ MICROPROCESSOR POWER-ON RESET (RESET VALID EVEN DURING BATTERY


    Original     		M48Z129Y M48Z129V 128Kb M48Z129Y: M48Z129V: AN1012 M48Z129V M48Z129Y PDF

    5716

    Abstract: M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		M48Z129Y M48Z129V M48Z129Y: 5716 M48Z129V M48Z129Y PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    TSOP32 FOOTPRINT

    Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
    Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave


    Original     		NL-5652 FLNVRAM/1000 TSOP32 FOOTPRINT NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V PDF

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


    Original     		element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety PDF

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02 PDF

    M4Z32-BROOSH1

    Abstract: M4Z28-BROOSH1 SOH28 m48t35 M4T28-BR12SH1 Zeropower M40SZ100 M40SZ100W M40Z111 M40Z300W
    Text: Non-volatile RAM and RTC Selection guide High density surface mount solutions 32Mb NVRAM LPS LPS LPS LPS 16Mb with parallel RTC RAM RAM LPS RAM T212 RAM RAM LPS RAM 2x 8Mb LPSRAMs M48T212 M40Z300 “Hatless” 4x 8Mb LPSRAMs Mix and match ST SUPERVISORs, LPSRAMs and SNAPHAT tops for a surface mount


    Original     		M48T212 M40Z300 M41ST85 M41ST95 SGNVRAM/0603 M4Z32-BROOSH1 M4Z28-BROOSH1 SOH28 m48t35 M4T28-BR12SH1 Zeropower M40SZ100 M40SZ100W M40Z111 M40Z300W PDF

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 br1632 br1225 PDF

    Cross Reference

    Abstract: sram cross reference M48Z512A TI Cross Reference Search DS1220AB DS1220AD DS1225AB DS1225AD DS1270W DS1230W
    Text: Tech Brief 39 NV SRAM Cross Reference Table www.maxim-ic.com CROSSING NV SRAMS Two companies make nonvolatile NV SRAMS that are direct or close crosses to the NV SRAMs manufactured by Dallas Semiconductor. The following table contains of list of these crosses.


    Original     		DS1220AB DS1220AD DS1225AB DS1225AD DS1230AB DS1230Y DS1230W DS1245AB DS1245Y DS1245W Cross Reference sram cross reference M48Z512A TI Cross Reference Search DS1220AB DS1220AD DS1225AB DS1225AD DS1270W DS1230W PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 ï. S G S -1H 0M S 0N ILIMMûiêS M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 PMDIP32 M48Z129V A0-A16 PDF

    Untitled

    Abstract: No abstract text available
    Text: M48Z129Y M48Z129V SGS-THOMSON ra [iôm[iOT s Ki(gs 1Mb (128K x 8) ZEROPOWER SRAM PRELIMINARY DATA INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER


    OCR Scan     		M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 PMDIP32 PDF

    Untitled

    Abstract: No abstract text available
    Text: / ^ T SGS-THOM SON ^ 7 #» MWilLIIgiiìMDgS M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		M48Z129Y M48Z129V M48Z129Y: M48Z129V: PMDIP32 M48Z129Y, PMDIP32 PDF