Atmel part numbering
Abstract: FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd
Text: Standard NOR Flash family Cross-reference guide September 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties
|
Original
|
PDF
|
CRNORFLASH1005
Atmel part numbering
FBGA48
TFBGA48
te28f320b3bd
49XX
TSOP32 Package
TE28F320B3TD
MBM29F080A
tsop48
te28f320c3bd
|
IC 555 timer low volt
Abstract: CAT28F512P-90 CAT28F010PI-12 CAT28F001P-12T PDIP32 CAT28F512NI-90 CAT28F001 CAT28F001N-90T PLCC32 512k CAT28F001N-90B
Text: BACK NEXT CATALYST Flash Memory CAT28Fxxx Series electrically erasable and reprogrammable Flash memory is ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.
|
Original
|
PDF
|
CAT28Fxxx
CAT28F001
CAT28F001.
IC 555 timer low volt
CAT28F512P-90
CAT28F010PI-12
CAT28F001P-12T
PDIP32
CAT28F512NI-90
CAT28F001N-90T
PLCC32 512k
CAT28F001N-90B
|
plcc32 pinout
Abstract: BIOS 32 Pin PLCC TSOP 28 SPI memory Package flash 89C58 64Kx8 CMOS RAM sst BIOS 8 Pin PLCC tsop32 static ram 64kx8 SST49LF040A MCU 64KX16
Text: Application Specific Memory Products Serial Flash—45 Series ComboMemory Family—31, 32 & 34 Series The Serial Flash family of products is a low-power application specific memory that implements Read and Program/Erase operations through the Serial Peripheral Interface SPI bus compatible serial protocol.
|
Original
|
PDF
|
Flash--45
Family--31,
32-Pin
SST58SD008
SST58SD016
SST58SD024
SST58SD032
SST58SD048
SST58SD064
SST58LD008
plcc32 pinout
BIOS 32 Pin PLCC
TSOP 28 SPI memory Package flash
89C58
64Kx8 CMOS RAM
sst BIOS 8 Pin PLCC
tsop32
static ram 64kx8
SST49LF040A
MCU 64KX16
|
M93C46BN1
Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA
|
Original
|
PDF
|
M2716-1F1
M2716-1F6
M2716F1
M2716F6
M2732A-2F1
M2732AF1
M2732AF6
M2732A-3F1
M2764A-1F1
M2764A-20F1
M93C46BN1
PLCC32 512k
M24C32MN1
M93S46RBN1
ST24C04M1
200N1
M28F512-15C1
M27C1024-12F7
M27C256B-20C7
|
MLP8 2x3mm
Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Text: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties
|
Original
|
PDF
|
SGEEFLASH/1204
MLP8 2x3mm
MLP8 m25p64
MARKING code mf stmicroelectronics
AN2043
SO8 NARROW
Part Marking STMicroelectronics flash memory
EEPROM 16Mb
M25P
stmicroelectronics eeprom
M25P16
|
plcc32 pinout
Abstract: TSOP32 M29W040 PLCC32
Text: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical
|
Original
|
PDF
|
M29W040
100ns
12MHz)
29W040
PLCC32
120ns
150ns
TSOP32
200ns
plcc32 pinout
TSOP32
M29W040
PLCC32
|
M28F201
Abstract: TSOP32 Package PLCC32 TSOP32
Text: M28F201 REVISION HISTORY - cont’d Date Description Stand-by Current from 10uA typ. to 5uA typ. November ’97 AC Test Circuit and Waveforms - modified PLCC mechanical data and diagram - modified TSOP mechanical data - modified August ’98 New ST Logo and Disclaimer - added
|
Original
|
PDF
|
M28F201
256Kb
PLCC32
TSOP32
AI00639C
AI00640D
M28F201
TSOP32 Package
PLCC32
TSOP32
|
TSOP32
Abstract: TSOP32 Package PLCC32
Text: M28W201 2 Mbit 256Kb x8, Bulk Low Voltage Flash memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION
|
Original
|
PDF
|
M28W201
256Kb
100ns
M28W201
120ns
150ns
200ns
PLCC32
TSOP32
TSOP32
TSOP32 Package
PLCC32
|
plcc32 pinout
Abstract: No abstract text available
Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical
|
Original
|
PDF
|
M29F040
12MHz)
PLCC32
TSOP32
M29F040
120ns
150ns
AI01379
PLCC32
plcc32 pinout
|
M28F201
Abstract: PLCC32 TSOP32
Text: M28F201 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical
|
Original
|
PDF
|
M28F201
M28F201
PLCC32
TSOP32
AI00639C
AI00640D
PLCC32
TSOP32
|
plcc32 pinout
Abstract: M28F101 PDIP32 PLCC32 TSOP32
Text: M28F101 1 Mb 128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max
|
Original
|
PDF
|
M28F101
PLCC32
PDIP32
TSOP32
M28F101
AI00668
plcc32 pinout
PDIP32
PLCC32
TSOP32
|
AI01378
Abstract: M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout
Text: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical
|
Original
|
PDF
|
M29F040
12MHz)
PLCC32
TSOP32
120ns
150ns
AI01378
M29F040
PLCC32
TSOP32
B29F040
512k x 8 chip block diagram
plcc32 pinout
|
M29F040
Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical
|
Original
|
PDF
|
M29F040
512Kb
12MHz)
PLCC32
TSOP32
120ns
150ns
M29F040
PLCC32
plcc32 pinout
TSOP32
B29F040
|
plcc32 pinout
Abstract: M28F101 PLCC32 TSOP32 TSOP32 Package PDIP32
Text: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical
|
Original
|
PDF
|
M28F101
128Kb
PLCC32
PDIP32
TSOP32
M28F101
plcc32 pinout
PLCC32
TSOP32
TSOP32 Package
PDIP32
|
|
|
TSOP32
Abstract: plcc32 pinout TSOP32 Package M29W040 PLCC32 TSOP-32
Text: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical
|
Original
|
PDF
|
M29W040
512Kb
100ns
12MHz)
PLCC32
120ns
150ns
TSOP32
200ns
TSOP32
plcc32 pinout
TSOP32 Package
M29W040
PLCC32
TSOP-32
|
Untitled
Abstract: No abstract text available
Text: M28V201 LOW VOLTAGE 2 Megabit 256K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 150ns LOW POWER CONSUMPTION – Active Current: 15mA Max. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 3.3V ± 0.3V SUPPLY VOLTAGE
|
Original
|
PDF
|
M28V201
150ns
M28V201
200ns
AI01812
PLCC32
TSOP32
|
MK48T87B24
Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W
|
OCR Scan
|
PDF
|
M27C64A-15F1
M27C64A-20F1
M27C64A-25F1
M27C64A-30F1
M27C64A-20F6
M27C64A-25F6
M27C64A-30F6
ST16601
ST16F48
ST16SF48
MK48T87B24
ST24C02CB1
MK48T18B15
M48Z32Y-100PC1
M2764AF1
MK48Z02B-20
MKI48Z12B15
ST24C01CB1
MK48Z02B-25
ST24C16CM1TR
|
ST27C256-20CP
Abstract: SGS-Thomson 256k eprom ST27C256-17CFN 27C256 DIP ST27C256-20TFN 32-PIN PLCC32 st27c256p ST27C256-20CFN st 27c256
Text: 7^5^537 C T ^ 7 # S G S C S - T H O M S O N M « M » 3> - Z £ □027474. J ! « ! S - T HO MS ON S T 2 7 C 2 5 6 F N . S T 2 7 C 2 5 6 P 30E D 256K (32K x 8 CMOS ONE TIME PROGRAMMABLE ROM • COMPATIBLE TO ST27C256 EPROM (ELEC TRICAL PARAMETER,
|
OCR Scan
|
PDF
|
0QS7474
ST27C256FN
ST27C256P
ST27C256
28-PIN
32-PIN
DlP-28
PLCC32
ST27C256P
ST27C256FN
ST27C256-20CP
SGS-Thomson 256k eprom
ST27C256-17CFN
27C256 DIP
ST27C256-20TFN
PLCC32
ST27C256-20CFN
st 27c256
|
Untitled
Abstract: No abstract text available
Text: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical
|
OCR Scan
|
PDF
|
M29W040
100ns
12jjs
12MHz)
100ns
120ns
150ns
200ns
PLCC32
|
mm29f040
Abstract: No abstract text available
Text: SGS-THOMSON M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10jis typical ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical
|
OCR Scan
|
PDF
|
M29F040
10jis
12MHz)
PLCC32
M29F040
PLCC32
TSOP32
mm29f040
|
A13E
Abstract: 28F201 5 pin A13E M28F201
Text: SGS-1H0MS0N M28F201 m 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ns typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION
|
OCR Scan
|
PDF
|
M28F201
PLCC32
TSOP32
M28F201
28F201
006MLi
A13E
28F201
5 pin A13E
|
28F101
Abstract: 013d01 M28F101
Text: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i M28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical
|
OCR Scan
|
PDF
|
M28F101
PDIP32
PLCC32
M28F101
ar28F101
PDIP32
PLCC32
28F101
013d01
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F040 ^7# ^0 g® i[L[lW®raD(gi 4 Mb (512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: lO^is typical ■ ERASE TIME
|
OCR Scan
|
PDF
|
M29F040
12MHz)
PLCC32
29F040
|
TS27C64 25cp
Abstract: TS27C64A-20CP 27C64A ROM TS27C64A-15CFN T11Bl TS27C64 m7am 32-PIN DIP-28 PLCC32
Text: 7•= e ^ 23 7 0 0 2 74b4 '«-1^ Ô 1 3 -2 5 TS27C64AFN TS27C64AP S C S -T H O M S O N m S G S-TH0MS0N 3QE 64K 8K x 8) C M O S O N E T IM E P R O G R A M M A B LE ROM COMPATIBLE TO TS27C64A EPROM (ELECTRICAL PARAMETERS, PROGRAMMING) PROGRAMMING VOLTAGE 12.5V
|
OCR Scan
|
PDF
|
0274b4
TS27C64AFN
TS27C64AP
TS27C64A
28-PIN
32-PIN
DIP-28
PLCC32
TS27C64AP
TS27C64AFN
TS27C64 25cp
TS27C64A-20CP
27C64A ROM
TS27C64A-15CFN
T11Bl
TS27C64
m7am
DIP-28
PLCC32
|
