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    FDIP28W Search Results

    FDIP28W Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDIP28WA STMicroelectronics FDIP28WA FOR MEMORY PRODUCTS Original PDF
    FDIP28WB STMicroelectronics FDIP28WB FOR MEMORY PRODUCTS Original PDF

    FDIP28W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N914

    Abstract: M27256 LABLES INFORMATION
    Text: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M27256 170ns FDIP28W M27256 1N914 LABLES INFORMATION

    1N914

    Abstract: M27256 Electrolytic Capacitors - Quality flowchart
    Text: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M27256 170ns FDIP28W M27256 1N914 Electrolytic Capacitors - Quality flowchart

    M27512

    Abstract: 1N914
    Text: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M27512 200ns FDIP28W M27512 1N914

    M27C64A

    Abstract: 1N914 M2764A
    Text: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M2764A 180ns FDIP28W M2764A M27C64A 1N914

    M27C256

    Abstract: NM27C256B
    Text: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA 1 u d o FDIP28W (F) ■ Programming voltage: 12.75V ± 0.25V


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    PDF M27C256B FDIP28W PDIP28 PLCC32 M27C256 NM27C256B

    1N914

    Abstract: M2764A M27C64A
    Text: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M2764A 180ns FDIP28W M2764A M27C64A 1N914

    1N914

    Abstract: M27256 thomson 7895
    Text: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M27256 170ns FDIP28W M27256 1N914 thomson 7895

    1N914

    Abstract: M27128A
    Text: M27128A NMOS 128K 16K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 FDIP28W (F) ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V


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    PDF M27128A 200ns FDIP28W M27128A 1N914

    1N914

    Abstract: M2764A M27C64A M2764AS
    Text: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTLCOMPATIBLEDURING READ andPROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M2764A 180ns FDIP28W M2764A M27C64A 1N914 M2764AS

    1N914

    Abstract: M27128A
    Text: M27128A NMOS 128K 16K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 FDIP28W (F) ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V


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    PDF M27128A 200ns FDIP28W M27128A 1N914

    M27512

    Abstract: 1N914
    Text: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V


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    PDF M27512 200ns FDIP28W M27512 1N914

    ST M27C256B

    Abstract: M27C256B PDIP28 PDIP32 PLCC32
    Text: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte


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    PDF M27C256B M27C256Bis FDIP28W ST M27C256B M27C256B PDIP28 PDIP32 PLCC32

    1N914

    Abstract: M2764A M27C64A
    Text: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■


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    PDF M2764A 180ns M2764A M27C64A 1N914

    11PROGRAMMING

    Abstract: 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512
    Text: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V


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    PDF M27C512 FDIP28W PDIP28 PLCC32 TSOP28 11PROGRAMMING 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


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    PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


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    PDF M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR

    Untitled

    Abstract: No abstract text available
    Text: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:


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    PDF D037Sbb 27C512 M27C512 FDIP28W PDIP28 PLCC32 PTS028

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS'THOMSON ^ 7 # G fflD IIM ilL IO T M O IS i M 2 7 V 256 LOW VOLTAGE 256K 32K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA


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    PDF M27V256 M27C256B TSOP28

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-THOMSON M87C257 IM 0 ffi ô [SHIgM ( ô ) IM H ( 5 g AD D RESS LATCHED 256K (32K x 8) UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION:


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    PDF M87C257 FDIP28W PLCC32

    Untitled

    Abstract: No abstract text available
    Text: SGS-1H0 M S0 N A 7 M . [» iS m ifg M M t g M 87C 257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100(iA ■ PROGRAMMING VOLTAGE: 12.75V


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    PDF M87C257 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA


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    PDF M27V512 M27C512 TSOP28

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA


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    PDF M27C256B 10OjiA M27C256B TSOP28

    ST62T65BM

    Abstract: ST62E60/T60
    Text: ST62E60B, T60B ST62E65B, T65B SGS-THOMSON 8-BIT OTP/EPROM HCMOS MCUs WITH A/D CONVERTER, EEPRQM & AUTORELOAD TIMER PRELIMINARY DATA 3.5 to 6.0V Supply Operating Range 8 MHz M aximum Clock Frequency -40 to +85°C Operating Tem perature Range Run, W ait & Stop Modes


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    PDF ST62E60B, ST62E65B, PDIP20 PDIP28 PS020 PS028 PDIP20, ST62T60B) PDIP28, ST62T65B) ST62T65BM ST62E60/T60

    Untitled

    Abstract: No abstract text available
    Text: _M27V256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION: - Active Current 10mA at 5MHz - Standby Current 10|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V


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    PDF M27V256 10Ojos/byte FDIP28W PDIP28 PLCC32 TSOP28 M27V256