Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PHP3N60 Search Results

    PHP3N60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHP3N60 Philips Semiconductors MOSFET POWER TRANSISTOR 600V 4.8A 125W TO-220AB Original PDF
    PHP3N60E Philips Semiconductors PowerMOS transistors Avalanche energy rated Original PDF
    PHP3N60E Toshiba Power MOSFETs Cross Reference Guide Original PDF

    PHP3N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PHB3N60E

    Abstract: PHP2N60 PHP3N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N60E, PHB3N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original
    PDF PHP3N60E, PHB3N60E PHP3N60E O220AB) PHB3N60E PHP2N60

    PHP3N60

    Abstract: PHX2N60
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


    Original
    PDF OT186A PHX2N60 PHP3N60 PHX2N60

    FREDFET

    Abstract: PHB6ND50E PHP3N60 PHP4N50 PHP6ND50E Power FREDFET Transistor
    Text: Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES PHP6ND50E, PHB6ND50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original
    PDF PHP6ND50E, PHB6ND50E FREDFET PHB6ND50E PHP3N60 PHP4N50 PHP6ND50E Power FREDFET Transistor

    PHP3N60

    Abstract: PHP6N60E PHX6N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX6N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


    Original
    PDF PHX6N60E OT186A PHP3N60 PHP6N60E PHX6N60E

    PCA1318P

    Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
    Text: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product


    Original
    PDF DN-42 REPLACec-99 30-Jun-00 PCA1318P philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112

    PHP2N60

    Abstract: PHP3N60E PHX1N60 PHX3N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX3N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


    Original
    PDF PHX3N60E OT186A PHP2N60 PHP3N60E PHX1N60 PHX3N60E

    PHB4N60E

    Abstract: PHP3N60 PHP4N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP4N60E, PHB4N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original
    PDF PHP4N60E, PHB4N60E PHP4N60E O220AB) PHB4N60E PHP3N60

    PHP6N50E

    Abstract: PHB6N50E PHP3N60 PHP4N50 USON-10
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N50E, PHB6N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original
    PDF PHP6N50E, PHB6N50E PHP6N50E O220AB) PHB6N50E PHP3N60 PHP4N50 USON-10

    PHB6N60E

    Abstract: PHP3N60 PHP6N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original
    PDF PHP6N60E, PHB6N60E PHP6N60E O220AB) PHB6N60E PHP3N60

    transistor IRF730

    Abstract: IRF730 PHP3N50 PHP3N60 PHP5N40
    Text: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF730 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 400 V


    Original
    PDF IRF730 O220AB) IRF730 transistor IRF730 PHP3N50 PHP3N60 PHP5N40

    PHB7N40E

    Abstract: PHP3N50 PHP3N60 PHP5N40 PHP7N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N40E, PHB7N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original
    PDF PHP7N40E, PHB7N40E PHP7N40E O220AB) PHB7N40E PHP3N50 PHP3N60 PHP5N40

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original
    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    PHP3N60

    Abstract: PHP6N60E
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling


    Original
    PDF O220AB PHP3N60 PHP3N60 PHP6N60E

    rrb surface transistor

    Abstract: No abstract text available
    Text: Product soecification Philips Semiconductors PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy rated_ SYMBOL FEATURES • • • • • QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan
    PDF PHP3N60E, PHB3N60E PHP3N60E T0220AB) PHB3N60E rrb surface transistor

    D 1062 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan
    PDF PHP3N60E T0220AB D 1062 transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated SYMBOL FEATURES • • • • • PHP3N60E, PHB3N60E QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance


    OCR Scan
    PDF PHP3N60E, PHB3N60E PHP3N60E T0220AB) PHB3N60E OT404

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan
    PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    buk455

    Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
    Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP


    OCR Scan
    PDF BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444-500B BUK444-600B BUK445-400B BUK445-500B BUK445-600B buk455 BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan
    PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z

    BUK444-200

    Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
    Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50


    OCR Scan
    PDF 7-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1OOOB BUK446-1000B T0220AB OT186 BUK444-200 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan
    PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook

    BUK445-100A

    Abstract: BUK445-600B
    Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP


    OCR Scan
    PDF BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444-500B BUK444-600B BUK445-400B BUK445-500B BUK445-600B BUK445-100A

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PHX4N60E PowerMOS transistors Avalanche energy rated FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance


    OCR Scan
    PDF PHX4N60E PHX4N60E OT186A OT186A