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    PHX1N60 Search Results

    PHX1N60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHX1N60 Philips Semiconductors PowerMOS Transistor Original PDF
    PHX1N60E Philips Semiconductors PowerMOS transistor Isolated version of PHP1N60E Original PDF
    PHX1N60E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    PHX1N60E Philips Semiconductors PowerMOS transistor Isolated version of PHP1N60E Scan PDF

    PHX1N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PHX1N60

    Abstract: PHX2N40 PHX4N40E PHP4N40
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX4N40E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


    Original
    PDF PHX4N40E OT186A PHX1N60 PHX2N40 PHX4N40E PHP4N40

    PHP4N40

    Abstract: PHX1N60 PHX2N40
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


    Original
    PDF OT186A PHX2N40 PHP4N40 PHX1N60 PHX2N40

    PHP2N60

    Abstract: PHP3N60E PHX1N60 PHX3N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX3N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


    Original
    PDF PHX3N60E OT186A PHP2N60 PHP3N60E PHX1N60 PHX3N60E

    PHP1N60E

    Abstract: PHX1N60E
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    Original
    PDF PHP1N60E OT186A PHX1N60E PHP1N60E PHX1N60E

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original
    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    PHX1N60A

    Abstract: PHX2N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX2N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


    Original
    PDF PHX2N60E OT186A PHX1N60A PHX2N60E

    PHP2N60

    Abstract: PHX1N60
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


    Original
    PDF OT186A PHX1N60 PHP2N60 PHX1N60

    PHP3N50

    Abstract: PHX1N60 PHX2N50
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


    Original
    PDF OT186A PHX2N50 PHP3N50 PHX1N60 PHX2N50

    PHP4N40

    Abstract: PHX1N60 PHX2N40 PHX4ND40E
    Text: Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES PHX4ND40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


    Original
    PDF PHX4ND40E PHP4N40 PHX1N60 PHX2N40 PHX4ND40E

    PHX3N50E

    Abstract: PHP3N50 PHX1N60 PHX2N50
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX3N50E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


    Original
    PDF PHX3N50E OT186A PHX3N50E PHP3N50 PHX1N60 PHX2N50

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION PHX1N60E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan
    PDF PHP1N60E PHX1N60E PINNING-SOT186A

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan
    PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan
    PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan
    PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


    OCR Scan
    PDF PHX1N60

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan
    PDF PHP1N60E PHX1N60E PINNING-SOT186A

    n60e

    Abstract: PHP1N60E PHX1N60E
    Text: Objective Specification Philips Semiconductors PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan
    PDF PHP1N60E PHX1N60E -SOT186A OT186A; n60e PHP1N60E PHX1N60E