MC-306
Abstract: No abstract text available
Text: Crystal unit SMALL SMD LOW / MEDIUM-FREQUENCY CRYSTAL UNIT MC-306 • High-density mounting-type SMD. • Photolithography finished allows uniform and stable performance. • Excellent reliability and environmental capability. Actual size Specifications characteristics
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MC-306
MC-306
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C-005R
Abstract: 100 khz crystal C-001R C-002RX C-004R
Text: Crystal unit SMALL CYLINDER LOW/MEDIUM-FREQUENCY CRYSTAL UNIT C-4-TYPE • Photolithography finished allows uniform and stable performance. • Small and light weight. ø1.5 x 6 mm • Excellent shock resistance and environmental capability. • Most suitable for pagers and card products like PCMCIA.
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C-001R
C-002RX
C-004R
C-005R
C-005R
100 khz crystal
C-001R
C-002RX
C-004R
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planar spiral coil
Abstract: MicroMetrics HP 8510 MMI301 MMI-300 MMI304 MMI302 MMI300 MMI303 300 Series
Text: Passive Components Passive Components: MMI 300 Series Spiral Inductors Description The MicroMetrics MMI 300 series of Spiral Inductors are formed by photolithography and plating techniques on quartz substrates. They eliminate the need for hand forming and ”staking“ of coil in hybrid circuits.
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MMI301
MMI302
MMI303
MMI304
planar spiral coil
MicroMetrics
HP 8510
MMI301
MMI-300
MMI304
MMI302
MMI300
MMI303
300 Series
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GH15
Abstract: gh15/17/18.1
Text: Microwave SLC’s GENERAL INFORMATION In addition to the standard SLC products shown below, AVX is now able to offer bordered versions in these same dielectric families as detailed on the opposing page utilizing micron resolution photolithography and etching processes.
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50WVDC
100WVDC
GH15
gh15/17/18.1
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HSH1500KS
Abstract: MA150 MA200 Ultratech 250 W canon power
Text: Imaging D A T A S H E E T Lighting Telecom Mercury Short Arc Lamps HSH1500KS Lamps for Photolithography Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the
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HSH1500KS
DS-183
HSH1500KS
MA150
MA200
Ultratech 250 W
canon power
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nikon
Abstract: nikon nsr 1505 NSR-1505 USH1002FNL nikon NSR nikon STEPPER HSH1002NEO nikon NSR g8
Text: Imaging D A T A S H E E T Lighting Telecom Mercury Short Arc Lamps HSH1002NEO Lamps for Photolithography Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the
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HSH1002NEO
DS-179
nikon
nikon nsr 1505
NSR-1505
USH1002FNL
nikon NSR
nikon STEPPER
HSH1002NEO
nikon NSR g8
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HSH1500CIEO
Abstract: SUV1501CIL canon 350
Text: Imaging D A T A S H E E T Lighting Telecom Mercury Short Arc Lamps HSH1500CIEO Lamps for Photolithography Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the
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HSH1500CIEO
DS-182
HSH1500CIEO
SUV1501CIL
canon 350
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Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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lockin amplifier
Abstract: pbs photoconductor lead selenide Model 289K 77058 70703
Text: 5.0 127 PbS @ 289K V /A -10 10 A G M E CO NS TA NT Photolithography N MI X MA D ME 2.06 (52) -11 10 PbSe @ 243K PbS @ 243K -12 6000 WAVELENGTH (nm) Fig. 1 NEP of PbS and PbSe Detectors. 1.25 (32) Dimensions in inches (mm) Excellent detectors for the 1 to 4.5 µm region
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MC-405
Abstract: MC-406 6571a
Text: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/406 Products number Q1 xMC 4 0 5 x x x x x 0 0 Q1 xMC 4 0 6 x x x x x 0 0 • • • • • High-density mounting-type SMD. Photolithography finished allows uniform, stable performance. Excellent environmental capability.
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MC-405/406
10-6/year
MC-405
MC-406
MC-406
MC-405
6571a
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C-001R
Abstract: C-002RX C-004R C-005R
Text: Crystal unit CYLINDER LOW/MEDIUM-FREQUENCY CRYSTAL UNIT C-001R C-2-TYPE/C-TYPE C-002RX C-2-TYPE C-004R C-005R Products number Q1 2C2 0 0 0 x x x x x 0 0 Q1 1C0 0 1Rx x x x x 0 0 Q1 1C0 2RXx x x x x 0 0 Q1 1C0 0 4Rx x x x x 0 0 Q1 1C0 0 5Rx x x x x 0 0 • Photolithography finished allows uniform and stable performance.
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C-001R
C-002RX
C-004R
C-005R
10-6/year
C-001R
C-002RX
C-004R
C-005R
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Untitled
Abstract: No abstract text available
Text: MODEL : TO-306PS SERIES SURFACE MOUNT TYPE LOW FREQUENCY PLASTIC MOLDED PACKAGE # High density mounting type SMD OS # Photolithography finish allows uniform and stable performance 2.76 T3 8K # Excellent reliability and environmental capability # 2.54mm thickness which is equal to SMD type IC
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O-306PS
768KHz
000KHz
20ppm
50ppm
768KHz
3000G
54Max
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epson 32.768KHZ CRYSTALS
Abstract: mc306 crystal DG00003EC 32.768khz crystal MC306 Quartz Crystal 32.768KHz 21FF QUARTZ 32,768KHz epson photolithography 32.768khz crystal data sheet
Text: Surface Mount Quartz Crystals - Seiko Epson Low Frequency MC306 Series Features • Frequency range 20kHz-165kHz • Photolithography finish allows uniform and stable performance • Excellent shock resistance and environmental capability • Ex-stock availability
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MC306
20kHz-165kHz
10ppm
20ppm
50ppm
100ppm
04ppm/
3000G
768kHz
MC306
epson 32.768KHZ CRYSTALS
mc306 crystal
DG00003EC
32.768khz crystal
Quartz Crystal 32.768KHz
21FF
QUARTZ 32,768KHz epson
photolithography
32.768khz crystal data sheet
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pseudomorphic HEMT
Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
25mx200m
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
pseudomorphic HEMT
MIL-HDBK-263
AlGaAs resistivity
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pseudomorphic HEMT
Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
Text: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes
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FPD2250
FPD22501
FPD2250
25mx2250m
32dBm
12GHz
42dBm
FPD2250-000
pseudomorphic HEMT
MIL-HDBK-263
InP transistor HEMT
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Untitled
Abstract: No abstract text available
Text: CRYSTAL UNIT TUNING FORK CH-308 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer tR o H S • ELECTRICAL SPECIFICATIONS
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CH-308
500MQ
CH-206
CS-146
CS-306
CS-519
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Untitled
Abstract: No abstract text available
Text: SMD LOW/MEDIUM-FREQUENCY QUARTZ CRYSTAL MC-405/MC-406 • High-density mounting-type SMD. • Photolithography finish allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz.
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MC-405/MC-406
3000G
MC-405
MC-406
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Untitled
Abstract: No abstract text available
Text: CYLINDER LOW/ MEDIUM-FREQUENCY QUARTZ CRYSTAL C-2-TYPE/C-TYPE C-001R C-002RX • Photolithography finish allows uniform and stable performance. • Excellent shock resistance and environmental capability. • Respond to an extensive range of frequency, from 20 kHz to
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C-001R
C-002RX
04ppm
3000G
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CH-206
Abstract: CH-308 CS-306 CS306 CRYSTAL 32.768KHZ cs-306 CS-519 cs 308 CS-146
Text: CRYSTAL U N IT TUNING FORK CS-519 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer iR o H S • ELECTRICAL SPECIFICATIONS
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CS-519
768kHz
04ppm/
500MQ
CH-206
CH-308
CS-146
CS-306
CS306
CRYSTAL 32.768KHZ cs-306
CS-519
cs 308
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DRAMs
Abstract: Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO
Text: SIEMENS Trends in Memory Technology when CAS goes high again and initiates the next page access. Trends in Memory Technology DRAM speed improvements have historically come from process and photolithography advances. More recent improvements in DRAM performance however, have resulted from
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64M-EDO
4/x72
DRAMs
Dram 168 pin EDO buffered
PQFP-128
Multibank - DRAM
Signal Path Designer
Bus repeater
64MEDO
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6571a
Abstract: No abstract text available
Text: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/MC-406 • High-density mounting-type SMD. • Photolithography finished allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz.
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MC-405/MC-406
3000G
MC-405
MC-406
6571a
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6571a
Abstract: No abstract text available
Text: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/MC-406 • High-density m ounting-type SM D . • Photolithography finished allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz.
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MC-405/MC-406
6571a
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ot 306
Abstract: CS-306 CH-308 CS-405 SUNNY TR 308 OF cs 308 CH-206 CS-206 CS306
Text: CH-206, CH-308, CS-206, CS-306 : CH-206 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer CH-308 TUNING FORK TYPE
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CH-206
CH-308
CH-206,
CH-308,
CS-206,
CS-306
768kHz,
000kHz
50ppm
04ppm/C2
ot 306
CS-306
CH-308
CS-405
SUNNY
TR 308 OF
cs 308
CH-206
CS-206
CS306
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ED98
Abstract: 64MEDO
Text: [ren d s tn M em ory Eecnnoiogy w UMrtH spsea irrpnovemenis nave nisfaricany come from process and photolithography B !3 advances, More recent ¡mpnoYamenlH in DRAM •_■■. I I k'. r-. I ■ .-.r-. . l i - i r I CHI I ■-■'Z I 'h n i L i'V iO V C I.
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13urst-EDO
64M-EDO
ED98
64MEDO
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