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    FPD3000

    Abstract: MIL-HDBK-263
    Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD3000 FPD30002W FPD3000 25mx3000m 12GHz 42dBm FPD3000-000 MIL-HDBK-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD3000 FPD30002W FPD3000 mx3000Î 12GHz 42dBm FPD3000-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD3000 FPD30002W 47mmx0 FPD3000 mx3000Î 12GHz 42dBm PDF