FPD3000
Abstract: MIL-HDBK-263
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD3000
FPD30002W
FPD3000
25mx3000m
12GHz
42dBm
FPD3000-000
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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Original
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PDF
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FPD3000
FPD30002W
FPD3000
mx3000Î
12GHz
42dBm
FPD3000-000
|
Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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Original
|
PDF
|
FPD3000
FPD30002W
47mmx0
FPD3000
mx3000Î
12GHz
42dBm
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