Photodiodes
Abstract: 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015
Text: Chpt. 49 Final 10/11/99 11:34 AM Page 49.2 Laser-Beam Characterization Available in: ✔ Production Quantities ✔ Custom Configurations Silicon Photodiodes Photodiodes, Integrating Spheres & Amplifiers UNMOUNTED SILICON PHOTODIODES Single-element planar-diffused silicon photodiodes are ideal
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10-mm2
100-mm2
25-mmdiameter
wh007
011/C3
011/C
10-nm
Photodiodes
13 dsi 005
Melles
Melles Griot
Photodiodes Germanium PIN
13DAS011
13DSI001
f-19
10414
13 DMA 015
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J16A-18A-R100U
Abstract: J16A
Text: J16A Ge Avalanche Photodiodes APDs (0.8 to 1.5 pm) judson _•!. Description Multiplication Characteristics The J16A series Germanium Ava lanche Photodiodes are designed for high-speed applications at 800 and 1300 nm. Judson APDs offer low dark currents
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1300nm
J16A-FC1-R50U
100pm
J16A-18A-R100U
J16A
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PDINP075ST83-W-0
Abstract: PDINP075SC23-W-0 PDINP075FC13-W-0 laser Silicon Detector
Text: InGaAs PIN Photodiodes 75 µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from 1100 to 1650nm. These devices are available in fiber pigtailed
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1650nm.
PDINP075ST83-W-0
PDINP075SC23-W-0
PDINP075FC13-W-0
laser Silicon Detector
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laser range finder schematics
Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series
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Untitled
Abstract: No abstract text available
Text: J ^ E G z G JU D S O N Ge Avalanche Photodiodes APDs 0.8 to 1.5 urn Description Multiplication Characteristics The J16A series Germanium Ava lanche Photodiodes are designed for high speed applications at 800 and 1300 nm. Judson APDs offer low dark currents and
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1300nm,
30MHz
3D3Db05
DDGD32fl
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BD 509 CONNECTOR
Abstract: PDINP075100A Flexcore PDINP075500A-0-0-01
Text: PD LD Inc PDINP Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from
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1650nm.
BD 509 CONNECTOR
PDINP075100A
Flexcore
PDINP075500A-0-0-01
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ia2c
Abstract: No abstract text available
Text: MITSUBISHI InGaAs PHOTODIODES PD8XX1 SERIES FOR OPTICAL COMMUNICATION MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi H M I T S " 31E » \ -0 7 • ‘T ' M P D 8001, PD 8931 DESCRIPTION FEATURES The PD8XXÎ series are InGaAs avalanche photodiodes de •
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001425G
55/im
ia2c
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Photodiodes Germanium
Abstract: T05 Package T018
Text: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared
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70x80
100x130
250x250
500x500
GD2000
GD1000
Photodiodes Germanium
T05 Package
T018
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T018
Abstract: No abstract text available
Text: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared
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70x80
100x130
250x250
500x500
GD2000
GD1000
T018
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PD7005
Abstract: PD7035 PD7935
Text: MITSUBISHI InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC tj24ciô2ci G o m a a s s h i m i t s h 31E D SERIES FOR OPTICA L COMMUNICATION " T TYPE NAME - q i - c r ? PD7005, PD7035, PD7935 FEATURES DESCRIPTION M itsubishi PD7XX5 series are InGaAs photodiodes de
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tj24clÃ
PD7005,
PD7035,
PD7935
1300nm)
00mEM2
1300nm,
200ps/dlv
PD7005
PD7035
PD7935
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC 31E B ì> SERIES tj24cl ñ 2 ci GGIMEBR ^ HIMITS FOR O P T IC A L C O M M U N IC A TIO N j "T-m-cn TYPE NAME PD7005, PD7035, PD7935 DESCRIPTION FEATURES Mitsubishi PD7XX5 series are InGaAs photodiodes de
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tj24cl
PD7005,
PD7035,
PD7935
1600nm
1300nm)
1300nm,
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Germanium Power Devices
Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)
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GAV30
GAV40
GAV100
GAV30
GAV100
MIL-I-45208.
Germanium Power Devices
germanium power devices corporation
Germanium Power Diodes
Photodiodes Germanium PIN
Germanium power
Germanium
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI InGaAs PHOTODIODES PD7XX6 MITSUBISHI DISCRETE SC 31E D I S E R IE S Q014E43 □ B M I T 5 F O R O P T IC A L C O M M U N IC A T IO N T - 4 1 -D 7 TYPE NAME DESCRIPTION FEATURES The PD 7X X 6 series are InG aAs photodiodes designed to • • High quantum efficiency
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Q014E43
300/um
0ai424b
1300nm)
1300nm,
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germanium power devices corporation
Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■
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GAV30
GAV60
GAV100
GAV300
GAV60
germanium power devices corporation
Germanium Power Devices
Germanium Power Diodes
GAV300
MIL-45208
TO46
germanium photodiode PIN
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GM7VHR
Abstract: No abstract text available
Text: Germanium Photodetector Large Area Ge. Photodiodes Special Options: ● Thermal-Electric Coolers ● Custom Devices and Packaging ● Active Mounts /Ceramic Substrates ● Two-Colors ● Neutral Density Filters ● Amplified Devices Electrical Characteristics @ 25°C
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GM10HS
20photodiode
20spec2
GM7VHR
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16C70
Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Text: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior
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J16TE
J16TE
J16TE2
4C-70
16C-70
32C-70
4C-60
16C-60
16C70
J16D
thermistor inas
detector inas
judson PA-100
Germanium itt
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IGA-010
Abstract: G-010 S-010 S-025 S-050 S-050UV IGA-030 IGA-010 detector g030 TO5 packages
Text: Detector Components EOS offers a line of Silicon, Germanium, Indium Gallium Arsenide, and Indium Gallium Arsenide Antimonide photodiodes for use in the 0.3 µm to 2.4 µm spectrum. Material Si Ge InGaAs InGaAsSb Diodes operating at room temperature or TE cooled
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S-010
S-010/TE2
IGA-030
2010/TE2
T0-18
IGA-030/TE2
IGA-020
G-020
IGA-010
G-010
S-010
S-025
S-050
S-050UV
IGA-030
IGA-010 detector
g030
TO5 packages
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L1116
Abstract: RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier C30994E photodiode Avalanche photodiode
Text: E ELECTRO OPTICS IDE D H 3A741S4 ODDDD4fl T • GEEO C30994E Solid State Gamma-Ray Detector 7 -7 ^ 7 Developmental Type Silicon Avalanche Photodiodes Coupled to Bismuth Germanium Oxide Bi4Ge3012 Scintillators RCA Developmental type C3Q994E con sists of tw o Bismuth Germanium Oxide
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C30994E
Bi4Ge3012)
C3Q994E
Wh514)
L1116
RCA photomultiplier
Bi4Ge3012
photodiode germanium
scintillator
photodiode Avalanche photodiode APD
137CS
RCA Solid State amplifier
photodiode Avalanche photodiode
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J16-5SP-R02M-SC
Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
Text: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.
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3CI30bD5
D0DDS13
J16TE2
1550nm.
3G30L
000021L.
J16-5SP-R02M-SC
J16-8SP-R05M
GE PHOTODIODE
J16-18A-R01M-SC
J16P1R10M
J16-5SP-R03M-HS
J16-5SP-R03M-SC
judson germanium photodiode
J16-8SP-R05M-SC
J16-18A-R01M
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J16D
Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
Text: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.
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30BGb05
000DE13
J16TE2
11-mission.
3030L
000D21L,
J16D
J161
germanium diode equivalent
GE PHOTODIODE
J16-18A-R01M-HS
J16-5SP-R03M-HS
103 SRM
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Ir photodiodes gav40
Abstract: GAV40 GPD optoelectronics photodetectors avalanche photodiodes IR photodetectors GAV100 GAV30 Germanium Power Devices TO46 package high-speed
Text: GPD GAV30 GAV40 GAV100 OPTOELECTRONICS CORP. Ge Avalanche Photodiodes • OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers GPD Optoelectronics Corp. GAV30 GAV40 GAV100 CC Electrical Characteristics @ 25 °C
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GAV30
GAV40
GAV100
GAV40
MIL-I-45208.
Ir photodiodes gav40
GPD optoelectronics
photodetectors
avalanche photodiodes
IR photodetectors
GAV100
GAV30
Germanium Power Devices
TO46 package high-speed
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germanium photodiode PIN
Abstract: PIN-DSS Ge dual photodiode ir thermo sensor photodiode ge "Thermoelectric Cooler"
Text: DUAL SANDWICH DETECTOR SERIES TWO COLOR PHOTODIODES APPLICATIONS FEATURES • Flame Temperature sensing • Spectrophotometer • Dual-wavelength detection • IR Thermometers for Heat • Compact • Hermetically Sealed • Low Noise • Wide Wavelength Range
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Avalanche photodiode APD
Abstract: germanium photodiode PIN photodiode germanium photodiode "interference filter" Photodiodes Germanium receiver photodiode preamplifier AGC photovoltaic receiver 1550 pin Photodiode preamp avalanche photodiodes PREAMP circuit diagram
Text: APPLICATIONS OPTOELECTRONICS Joachim Krug PIN photodiodes with transimpedance amplifiers for optical networks: Compact pre-amp modules immune to interference The first amplifier stage of a receiver circuit in optical networks is usually a transimpedance amplifier. It has
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GAP100
Abstract: GAP300 Germanium Power Diodes GAP75 GAP60CS GAP60 10E-15 Germanium power Photodiodes Germanium PIN TO46
Text: GAP60 GAP60CS GAP75 GAP100 GAP300 GPD OPTOELECTRONICS CORP. High Speed InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP60 GAP60CS GAP75 GAP100 GAP300
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GAP60
GAP60CS
GAP75
GAP100
GAP300
GAP300
Germanium Power Diodes
GAP75
10E-15
Germanium power
Photodiodes Germanium PIN
TO46
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