TCD1200D
Abstract: TCD1200 TCD-12
Text: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution
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TCD1200D
TCD1200D
TCD1200
TCD-12
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TCD120AC
Abstract: No abstract text available
Text: TCD120AC The TCD120AC is a contact type CCD linear image sensor. The device is consist of 5 staggered high sensitivity CCD chips. The device contains a row of 4800 photodiodes which provide a A00 dots/inch resolution across an A3 size paper. By the aid of analog line memories fabricated
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TCD120AC
TCD120AC
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TC17G
Abstract: Photodiode Array 32 element tcd storage gate ccd TCD128AC
Text: TCD128AC The TCD12P.AC is a contact type CCD linear image sensor. The device is consist of 4 CCD chips which are collinearly arranged. The device contains a row of 1728 photodiodes which provides a 8 dots/mm resolution across A4 size 216mm document. And this device includes
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TCD128AC
TCD12P
216mm)
128AC
TC17C014AF-0042r
432ensor.
TC17G
Photodiode Array 32 element
tcd storage gate ccd
TCD128AC
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Untitled
Abstract: No abstract text available
Text: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both
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850nm
718-PS11
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Untitled
Abstract: No abstract text available
Text: Photodiodes Surface mount type Side view RPMD-0101W1 Datasheet lDimensions (Unit : mm) lApplications Note : Unspecified tolerance shall be 0.15. • Car navigations, Car audios • Household applications • OAs, FAs • PCs, peripheral devices • Other general-purpose applications
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RPMD-0101W1
750nm)
R1102A
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IC vertical lg
Abstract: MW3736CKH
Text: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section
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MW3736CKH
MW3736CKH
IC vertical lg
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SD-041-12-22-211
Abstract: T-23 2901222041 SD 102 M
Text: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.20 A/W min., 0.23 A/W typ. @ 450nm Total Area mm2 SD 041-12-22-011 isolated –211 0.85 SD 076-12-22-011 isolated -211 2.91 SD 100-12-22-021 isolated -221 5.1 SD 172-12-22-021 isolated -221
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450nm
SD-041-12-22-211
T-23
2901222041
SD 102 M
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VCSEL die bonding
Abstract: SATURN PY-CM11
Text: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.
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1300/1550nm
PY-CM11
1310nm
460X460
PY-CM11
VCSEL die bonding
SATURN
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H6779
Abstract: TPMH9003E01 H5784 R7400U BMOM AD H5783 H5773 H6780 pmt divider circuit pmt amplifier circuit
Text: PHOTOSENSOR MODULES H5773/H5783/H6779/ H6780/H5784 SERIES High Sensitivity, Wide Dynamic Range Fast Time Response The Photosensor Module is an optical sensor with extremely high sensitivity, capable of detecting light levels 1/10000 as low as those detectable with semiconductor photodiodes.
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H5773/H5783/H6779/
H6780/H5784
H5773,
H5783
H6779,
H6780
SE-171-41
TPMO1007E04
H6779
TPMH9003E01
H5784
R7400U
BMOM AD
H5773
pmt divider circuit
pmt amplifier circuit
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Untitled
Abstract: No abstract text available
Text: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both
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850nm
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PN303
Abstract: No abstract text available
Text: Panasonic PIN Photodiodes PN303 PIN Photodiode For optical control systems • Features • Fast response which is well suited to high speed m odulated light detection : tr, tf = 50 ns typ. • High photodetection sensitivity and wide dynamic responsivity
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PN303
900nm
PN303
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PD 2028 b
Abstract: No abstract text available
Text: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes
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940nm
880nm
840nm
PD 2028 b
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LIGHT POSITION CONTROL
Abstract: PNA3201F
Text: Panasonic PIN Photodiodes PNA3201F PIN Photodiode For optical control systems • Features • High sensitivity and low dark current • For one-dim ensional light-point position detection • G ood positional linearity • Small plastic package I Absolute Maximum Ratings Ta = 25°C
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PNA3201F
2856K)
900nm)
LIGHT POSITION CONTROL
PNA3201F
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VCSEL die bonding
Abstract: PY-CT11 InGaAs 0.85 um
Text: Preliminary specification 1300/1550nm 10Gbps Gbps InGaAs PIN Photodiodes Part number: PY-CT11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time Conditions -3 V -3 V 1µA - 3 V, 1 MHz
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1300/1550nm
10Gbps
PY-CT11
1310nm
460x250
PY-CT11
VCSEL die bonding
InGaAs 0.85 um
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G701
Abstract: tip 1050 G705 ga01 G301 G302 G501 G502 G702 G703
Text: iC-OG 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER FEATURES APPLICATIONS ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability ♦ Short track spacing of 600µm ♦ Elimination of dark currents through differential scanning
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20-pin
G701
tip 1050
G705
ga01
G301
G302
G501
G502
G702
G703
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8421/G8371/G5851 series Long wavelength type Cut-off wavelength: 1.85 to 1.9 m Features Applications Long cut-off wavelength: 1.85 to 1.9 m Optical power meter 3-pin TO-18 package: low price Gas analyzer Thermoelectrically cooled TO-18 package: low dark current
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G8421/G8371/G5851
A3179
A3179-01
C1103-04
SE-171
KIRD1046E06
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiodes S2506 series S6775 series S6967 Plastic SIP single in-line package S2506/S6775 series and S6967 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, highspeed response and large active areas.
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S2506
S6775
S6967
S2506/S6775
S6967
S2506-02:
S2506-04:
S6775,
S6967:
S6775-01:
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the
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S2281
C9329
S2281-01
S9219
E2573
SE-171
KSPD1044E02
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E06
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far uv photodiode
Abstract: Radiation Detector
Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.
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S1722-02
S1722-02
SE-171
KPIN1045E04
far uv photodiode
Radiation Detector
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode G8522 series High-speed response at low reverse voltage G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz gigahertz operation even at a low reverse voltage (2 V or less). Please contact our sales office with your specific needs.
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G8522
G8522-01:
G8522-02:
G8522-03:
SE-171
KGPD1008E02
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8422/G8372/G5852 series Long wavelength type Cut-off wavelength: 2.05 to 2.1 m Features Applications Cut-off wavelength: 2.05 to 2.1 m Gas analyzer 3-pin TO-18 package: low price Water content analyzer TE-cooled type TO-8 package: low dark current
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G8422/G8372/G5852
A3179
A3179-01
C1103-04
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
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Untitled
Abstract: No abstract text available
Text: 6112640 MICROPAC INDUSTRIES MICROPAC INDUSTRIES INC INC 91D ~T1 00360 D y . iff.g I DF|bliab4U S 66008 SERIES OPTOTRANSFORMER JUNE, 1984 DESCRIPTION: The 66008 series optotransformer consists of a pair of matched silicon photodiodes optically-coupled and spectrally
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Borosilicate
Abstract: No abstract text available
Text: Si photodiodes S2386 series For visible to IR, general-purpose photometry Features Applications High sensitivity Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity General ratings / Absolute maximum ratings
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S2386
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
S2386-14
SE-171
KSPD1035E04
Borosilicate
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