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    PHOTO DIODE 10 GBPS Search Results

    PHOTO DIODE 10 GBPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PHOTO DIODE 10 GBPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    photo diode

    Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
    Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.


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    PDF MXP4003 MXP4000 1310nm 1550nm MXP4003 photo diode photo diode 10 Gbps pin photo diode sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode

    Untitled

    Abstract: No abstract text available
    Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes


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    PDF MXP4003 MXP4000 1430nm 1550nm MXP4003

    25um

    Abstract: No abstract text available
    Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes


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    PDF MXP4003 1310nm 1550nm MXP4000 1550nm 1430nm MXP4003 25um

    ED 08 diode

    Abstract: ED 03 Diode
    Text: Obsolete Product – not recommended for new design MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the


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    PDF MXP4003 1310nm 1550nm dev61 MXP4003 ED 08 diode ED 03 Diode

    Untitled

    Abstract: No abstract text available
    Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively


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    PDF MXP4003 1310nm 1550nm MXP4000 1550nm

    VCSEL array, 850nm flip

    Abstract: MXP7001
    Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


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    PDF MXP7001 850nm VCSEL array, 850nm flip MXP7001

    VCSEL array, 850nm flip

    Abstract: MXP7001 GaAs array, 850nm
    Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


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    PDF MXP7001 VCSEL array, 850nm flip MXP7001 GaAs array, 850nm

    Untitled

    Abstract: No abstract text available
    Text: VC850M-H-TO46FW-PD v 1.3 15.05.2014 Description VC850M-H-TO46FW-PD is a multi mode infrared VCSEL emitting at typically 850 nm with rated output power of 10 mW cw, mounted into a standard TO-46 package, containing a monitor photo diode and sealed with a flat window cap. The VCSEL works under low forward current and voltage and with 1 Gbps


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    PDF VC850M-H-TO46FW-PD VC850M-H-TO46FW-PD

    PDF PIN PHOTO DIODE DESCRIPTION

    Abstract: OD9602N OD9604N photo diode circuit Photo Modules OD9601N photo amplifier application circuit 8pin
    Text: DATA SHEET O K I L A S E R P R O D U C T S OD9601N 1.25 Gbps OD9602N (622 Mbps) OD9604N (2.488 Gbps) + 3.3-V Photo Diode Preamp Modules February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––


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    PDF OD9601N OD9602N OD9604N OD9601N, OD9602N, OD9604 1-800-OKI-6388 PDF PIN PHOTO DIODE DESCRIPTION OD9602N OD9604N photo diode circuit Photo Modules OD9601N photo amplifier application circuit 8pin

    amplifier CV 203

    Abstract: VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


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    PDF LX3044/45/46 850nm LX304X LX3044 LX3045 LX3046 amplifier CV 203 VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode

    VCSEL array, 850nm flip

    Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


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    PDF LX3044/45/46 LX304X LX3044 LX3045, LX3046, 50ohm LX3045 LX3046 VCSEL array, 850nm flip VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3045 LX3046 PIN PHOTO DIODE

    amplifier CV 203

    Abstract: VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


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    PDF LX3044/45/46 850nm LX304X LX3045 LX3046 145um 450um amplifier CV 203 VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip

    VCSEL array, 850nm flip

    Abstract: No abstract text available
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


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    PDF LX3044/45/46 850nm LX304X LX3044 LX3045 LX3046 VCSEL array, 850nm flip

    Untitled

    Abstract: No abstract text available
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


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    PDF LX3044/45/46 LX304X LX3044 LX3045, LX3046, 50ohm LX3045 LX3046

    1550nm VCSEL

    Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
    Text: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar


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    PDF LX3051 1310nm 1550nm 1550nm VCSEL InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2

    LX3051

    Abstract: InGaAs P InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 InGaas PIN photodiode chip
    Text: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar


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    PDF LX3051 InGaAs P InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 InGaas PIN photodiode chip

    vcsel receiver

    Abstract: MXP7002 IR 2E09 850nm 300 nA photo Diode
    Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


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    PDF MXP7002 850nm MXP7002 High-893-2570 vcsel receiver IR 2E09 850nm 300 nA photo Diode

    MXP7002

    Abstract: IR 2E09
    Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


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    PDF MXP7002 850nm MXP7002 High893-2570 IR 2E09

    construction of photo diode

    Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
    Text: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks


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    PDF MXP7A02 10Gigabit MXP7000 850nm construction of photo diode photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM

    PIN PHOTO DIODE

    Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
    Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.


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    PDF MXP4002 MXP4000 1310nm 1550nm MXP4002 PIN PHOTO DIODE "Photo Diode" photo diode construction of photo diode IR PHOTO DIODE amplifier

    CMS101K2KC

    Abstract: KGA4130D Tecdia transimpedance amplifier 5 GHz GTD-18408
    Text: Preliminary Data Sheet December 1999 1KGA4130D 10Gbps AGC Transimpedance Amplifier IC DESCRIPTION Oki's 10 Gbps transimpedance amplifier is fabricated 0.1µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity and a wide dynamic range.


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    PDF KGA4130D 10Gbps 10pA/Hz 120nsec. KGA4130D GTD-18275 100pF CMS101K2KC Tecdia transimpedance amplifier 5 GHz GTD-18408

    DIODE ED 11

    Abstract: No abstract text available
    Text: Obsolete Product - not recommended for new design MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION 100µm aperture Semi-insulating substrate High Responsivity Low Dark Current High Bandwidth


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    PDF MXP7002 DIODE ED 11

    Untitled

    Abstract: No abstract text available
    Text: LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical


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    PDF LX3051

    1550nm photo diode for 10Gbps

    Abstract: MXP4003 MXP4005
    Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die


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    PDF MXP4005 MXP400X 12GHz 1550nm 508um 1430nm 1550nm 1550nm photo diode for 10Gbps MXP4003 MXP4005