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    PHILIPS FR 153 30 Search Results

    PHILIPS FR 153 30 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADSP-21369KSWZ-1A Analog Devices 266 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369BSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-5A Analog Devices 366MHz Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KBPZ-3A Analog Devices 400 MHZ Sh Memory ,S/PDIF/SDRA Visit Analog Devices Buy
    ADSP-21369KBPZ-2A Analog Devices 333MHz Shared Memory ,S/PDIF/S Visit Analog Devices Buy

    PHILIPS FR 153 30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    by228

    Abstract: BY228 Diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high


    Original     		PDF M3D118 BY228 BY228 mismatch\20000819\08182000\. \BY228 BY228, /\\Roarer\root\data13\imaging\BITTING\cpl BY228 Diode

    MC0628R

    Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
    Text: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference


    Original     		PDF SCYB017A T74ALVC32374 74CBTLV16211 SN74CBTD16211 SN74SSTV16859 SN74CBTLV16211GRDR SN74ALVC16245AGRDR -SN74SSTV16859GKER MC0628R 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE

    Philips FA 153

    Abstract: No abstract text available
    Text: Philips Sem iconductors tjb S 3 T 3 1 0033M13 T flb M A P X Prelim inary specification Hybrid CATV amplifier module BGY685AL N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING -SOT115C PIN • Excellent linearity DESCRIPTION • Extremely low noise


    OCR Scan     		PDF 0033M13 BGY685AL -SOT115C 46dBmV; Philips FA 153

    TYP 513 309

    Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
    Text: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250


    OCR Scan     		PDF BC817 BC818 BC846 BC847 BC848 BC868 BCP54 BCP55 BCP56 BCP68 TYP 513 309 philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144

    ECG937M

    Abstract: ECG937 G-437
    Text: PHILIPS E C G INC bbS3T2ö 0004373 T 17E ECG937, ECG937M JFE T Input Op Amplifier Semiconductors Features • W ider bandwidth decompensated Avmin^B • Low Input bias current — 30 pA • Low input offset current — 3.0 pA • Low Input offset voltage — 1.0 mV


    OCR Scan     		PDF ECG937, ECG937M ECG937 ECG938 R8-20K R3-R4-144M ECG937M ECG937 G-437

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification CATV am plifier module BGD814 FEATURES PINNING -SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2 and 3 • Silicon nitride passivation common


    OCR Scan     		PDF BGD814 -SOT115J OT115J MSA319

    transistor 1264-1

    Abstract: PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074
    Text: Philips S em iconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ' SbE D • / g BFG90A 711Dfi2b □□45111 735 ■ PHIN PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. It is designed for application in


    OCR Scan     		PDF OT103 BFG90A 711002b OT103. transistor 1264-1 PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074

    Philips fr 153 30

    Abstract: No abstract text available
    Text: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.


    OCR Scan     		PDF bbS3T31 BAS56 BAS56 1Z73J12 BAW62 Philips fr 153 30

    BUK436-60A

    Abstract: MC 151 transistor 100-P BUK436-60B
    Text: PHILIPS INTERNA TION AL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711D6Sb BUK436-60A/B BUK436 711062b 00b3fi BUK436-60A MC 151 transistor 100-P BUK436-60B

    BFG34

    Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
    Text: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband


    OCR Scan     		PDF BFG34 OT103 ON4497) OT103. BFG34 ON4497 TRANSISTOR 185 846 TRANSISTOR 726

    TRANSISTOR 2N3904

    Abstract: 2n3904 950 2n3904 specification k 151 transistor PNP switching transistor 2N3904 mhz
    Text: Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic


    OCR Scan     		PDF 2N3906. 2N3904 TRANSISTOR 2N3904 2n3904 950 2n3904 specification k 151 transistor PNP switching transistor 2N3904 mhz

    MB87S

    Abstract: No abstract text available
    Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.


    OCR Scan     		PDF bbS3R31 BFG198 OT223 MB87S

    BUK436-60A

    Abstract: 134 T31 100-P BUK436-60B
    Text: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711D6Sb BUK436-60A/B BUK436 drai11062b BUK436-60A 134 T31 100-P BUK436-60B

    ECG937M

    Abstract: IC133 ECG937 ecg931 k333 IC-133 R3B4
    Text: PHILIPS E C G INC tbS3TEfl 00 04373 17E ECG937, ECG937M JFE T Input Op Amplifier Sem ico nd uctors Features • Wider bandwidth decompensated Avmin^C • Low Input bias current — 30 pA • Low input offset current — 3.0 pA • Low Input offset voltage — 1.0 mV


    OCR Scan     		PDF 0G04373 r-79-/5 10vfjfU9 R3-B4-144M ECG937, ECG937M ECG937M IC133 ECG937 ecg931 k333 IC-133 R3B4

    BAW62

    Abstract: 1970 oscilloscope T0309 T-03-09
    Text: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA


    OCR Scan     		PDF BAW62 DO-35 OD-27 DO-35) 1970 oscilloscope T0309 T-03-09

    TRANSISTOR C 557 B

    Abstract: mpsh10 912 MPSH10 MPSH81
    Text: Philips Semiconductors b b S 3 *Î3 1 0 0 3 2 1 Û1 7 fl 4 • APX Product specification NPN 1 GHz general purpose switching transistor MPSH10 b'lE T> N A PIER P H I L I P S / D I S C R E T E FEATURES • • PINNING Low cost High power gain. PIN 1 2 3 DESCRIPTION


    OCR Scan     		PDF MPSH81. MPSH10 MPSH10 TRANSISTOR C 557 B mpsh10 912 MPSH81

    Untitled

    Abstract: No abstract text available
    Text: i i ' N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 25E D ^53=131 0022351 7 • BY359F—1500 J T-CZ-17 V FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery


    OCR Scan     		PDF BY359Fâ T-CZ-17 bb53131 D02235S M1047

    Untitled

    Abstract: No abstract text available
    Text: ^ 3 ffgyair* OSB 9415 SERIES OSM9415 SERIES , OSS 9415 SERIES ^53=131 DDESIOS 5 • MAINTENANCE TYPE N AF1ER PHILIPS/DISCRETE 2SE D HIGH-VOLTAGE RECTIFIER STACKS T -22-07 Ranges of high-voltage rectifier assemblies, incorporating controlled avalanche diodes mounted on


    OCR Scan     		PDF OSM9415 OSB9415 OSIVI9415 OSS9415 32UNC) OSM9415

    transistor bf 422 NPN

    Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
    Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency


    OCR Scan     		PDF BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103

    NT 407 F TRANSISTOR

    Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
    Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.


    OCR Scan     		PDF BFG198 OT223 MS8002 OT223. NT 407 F TRANSISTOR Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor

    c38 transistor

    Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
    Text: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.


    OCR Scan     		PDF D0b31t BLV948 OT262A2 MRC117 2x100 c38 transistor PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37

    8 pin ic lm 358

    Abstract: IC LM 258 SA532D lm2904n M158 wdc 1994 lm 358 ic IC OP AMP LM358N NE532D NE532N
    Text: Product specification Philips Semiconductors Linear Products NE/SA/SE532/ LM158/258/358/A/2904 Low power dual operational amplifiers DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally


    OCR Scan     		PDF NE/SA/SE532/ LM158/258/358/A/2904 532/358/LM2904 -30VDC 7110fl5b 007fl507 8 pin ic lm 358 IC LM 258 SA532D lm2904n M158 wdc 1994 lm 358 ic IC OP AMP LM358N NE532D NE532N

    TOKO 113kn if transformer

    Abstract: philips SQ20 TOKO 113kn Philips 153 AVP TOKO fi transformer ALL BAND TV TUNER IC philips vhf uhf tuner S020 SSOP20 TDA5632
    Text: Philips Sem iconductors P roduct spe cificatio n Low-power VHF and UHF mixer/oscillator for TV and VCR 2-band tuners TDA5632 FEATURES DESCRIPTION • Balanced mixer with a common emitter input for band A The TDA5632 is a monolithic integrated circuit that


    OCR Scan     		PDF TDA5632 TDA5632 SSQP20: OT266-1 711002b TOKO 113kn if transformer philips SQ20 TOKO 113kn Philips 153 AVP TOKO fi transformer ALL BAND TV TUNER IC philips vhf uhf tuner S020 SSOP20

    BC808-16R

    Abstract: bcb07 BC807-16R sot-23 npn marking code cr MARKING tAN SOT-23 sot-23 Marking 25R BC817R BC807 BC807-16 BC808
    Text: N AMER P H IL IP S /D IS C R E T E D tE D • 1^53^31 0015503 S ■ BC807 BC808 r-ai-/7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.


    OCR Scan     		PDF BC807 BC808 OT-23 BC817; BC818; BC807 OT-23. 35MHz BC808-16R bcb07 BC807-16R sot-23 npn marking code cr MARKING tAN SOT-23 sot-23 Marking 25R BC817R BC807-16 BC808