Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PHEMT MARKING CODE M Search Results

    PHEMT MARKING CODE M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    PHEMT MARKING CODE M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P3F filtronic

    Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
    Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency


    Original     		FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B PDF

    FPD7612P70

    Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		FPD7612P70 FPD7612P70 22dBm 85GHz 18GHz 11GHz) PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM Gain Stage MDU Output RF Distribution Amplifiers Low Noise Optical TIA SOIC-8 Package Product Features Functional Block Diagram • 75 Ω, 50 MHz to 1200 MHz Bandwidth • RF Low Noise Figure: 3.2 dB to 1000 MHz


    Original     		TAT7469 S21Typ PDF

    ultrasonic radar

    Abstract: radar 77 ghz FMCW Radar infineon ACC_PLL_1 Dielectric Resonator Oscillator DRO radar mmic FMCW Radar Module Infineon 77 GHz VCO FMCW circuit infineon FMCW
    Text: 77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data Sheet • • • • Operating Frequency: 76 - 77 GHz Output Power: + 13 dBm Input and Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		Q62702-G173 EHT09247 ultrasonic radar radar 77 ghz FMCW Radar infineon ACC_PLL_1 Dielectric Resonator Oscillator DRO radar mmic FMCW Radar Module Infineon 77 GHz VCO FMCW circuit infineon FMCW PDF

    FMCW Radar

    Abstract: infineon FMCW ultrasonic radar 77 GHz VCO fmcw generation radar 77 ghz FMCW Radar Module FMCW FMCW circuit VCO 77 GHZ
    Text: 77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet • • • • Operating Frequency: 76 - 77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		Q62702-G172 EHT09247 FMCW Radar infineon FMCW ultrasonic radar 77 GHz VCO fmcw generation radar 77 ghz FMCW Radar Module FMCW FMCW circuit VCO 77 GHZ PDF

    spf-5043

    Abstract: MARKING SPF5043Z spf-5043z SPF5043 spf5043z TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq
    Text: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity


    Original     		SPF5043Z 50MHz 4000MHz, SPF5043Z 4000MHz. spf-5043 MARKING SPF5043Z spf-5043z SPF5043 TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq PDF

    transistor Bc 542

    Abstract: transistor bc 567
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567 PDF

    transistor SMD P2F

    Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE PDF

    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF PHEMT marking code a FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A PDF

    CXE1089Z

    Abstract: MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		CXE-1089Z 50MHz 1200MHz CXE-1089Z OT-89 Frequency6-678-5570 CXE1089Z MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089 PDF

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		FPD2000AS FPD2000AS 350mA PDF

    transistor SMD P1f

    Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F PDF

    Untitled

    Abstract: No abstract text available
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		CXE-1089Z 50MHz 1200MHz 1200MHz OT-89 CXE-1089Z 75VDC, PDF

    Transistor p1f

    Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
    Text: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website


    Original     		FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS PDF

    TQL500

    Abstract: No abstract text available
    Text: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for 5GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications


    Original     		TQL5000 TQL5000 50-ohm TQL500 PDF

    CXE-1089Z

    Abstract: CXE1089Z CXE1089 1008LS marking code sirenza
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		CXE-1089Z 50MHz 1200MHz 1200MHz OT-89 CXE-1089Z EDS-105785 CXE1089Z CXE1089 1008LS marking code sirenza PDF

    MARKING CODE ACOM

    Abstract: aCOM marking M513 MASWSS0117 MASWSS0117SMB MASWSS0117TR MASWSS0117TR-3000 PHEMT marking code a
    Text: GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • MASWSS0117 V2 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz SC70 6-Lead Package 0.5 micron GaAs PHEMT Process


    Original     		MASWSS0117 MASWSS0117 SC-70 MARKING CODE ACOM aCOM marking M513 MASWSS0117SMB MASWSS0117TR MASWSS0117TR-3000 PHEMT marking code a PDF

    srf 3417

    Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
    Text: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge


    Original     		BRO254-07B srf 3417 transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506 PDF

    MASWSS0204 marking

    Abstract: MARKING CODE ACOM M513 MASWSS0117 MASWSS0204 MASWSS0204SMB MASWSS0204TR-3000 aCOM marking
    Text: RoHS Compliant GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • • • • • MASWSS0204 V1 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz


    Original     		MASWSS0204 MASWSS0117 MASWSS0204 MASWSS0204 marking MARKING CODE ACOM M513 MASWSS0117 MASWSS0204SMB MASWSS0204TR-3000 aCOM marking PDF

    Untitled

    Abstract: No abstract text available
    Text: TAT7460B1A 75Ω 5V 50-2600 MHz RF Amplifier Applications • • • • • Distribution Amplifiers Multi-Dwelling Units Drop Amplifiers Single-ended Gain Block FTTH Receivers T SOT-89 Package Product Features • • • • • 1A 0B 46 7 AT Functional Block Diagram


    Original     		TAT7460B1A OT-89 TAT7460B1A PDF

    ATF at 2.4 Ghz

    Abstract: ATF-541M4-TR1 MARKING CODE l22 lna Base Station TMA C65 - 004 PHEMT marking code a 2501 KK 716 50 ohm 2 ghz Antenna marking code C5 zo 107
    Text: ATF-541M4 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Miniature Leadless Package Data Sheet Description Avago Technologies’ ­ ATF­‑541M4 is a high linearity, low noise, single supply E‑PHEMT housed in a miniature lead‑ less package. The ATF-541M4’s small size and low profile makes it ideal


    Original     		ATF-541M4 ATF541M4 ATF-541M4 5988-9005EN AV01-0621EN ATF at 2.4 Ghz ATF-541M4-TR1 MARKING CODE l22 lna Base Station TMA C65 - 004 PHEMT marking code a 2501 KK 716 50 ohm 2 ghz Antenna marking code C5 zo 107 PDF

    Untitled

    Abstract: No abstract text available
    Text: SXE1089Z SXE1089Z 0.05GHz to 3GHz, Cascadable pHEMT MMIC Amplifier 0.05GHz to 3GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing a patented self-bias Darlington topology housed in a lowcost, surface


    Original     		SXE1089Z 05GHz OT-89 SXE1089Z OT-89 PDF

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR PDF