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    PEPI CR Search Results

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    pepi c

    Abstract: DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1
    Text: 2.0 µm 5V/100V/300V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 2 Micron 5V control logic 100V & 300 V N & P channels transistors Low On-Resistance Epi wafers Thin gate oxide State of the art double metal technology [Ti/TiN/Al/TiN


    Original     		PDF V/100V/300V pepi c DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1

    pepi c

    Abstract: pepi cr bimetallic thermostat PEPI bimetal PEPI -CH pepi thermostat bimetal thermostat seamless view thermostat pepi
    Text: A creep action thermostat/ thermal protector with conductive bimetal construction. Low internal resistance and available with gold diffused contacts for use in low voltage/low current applications. Models C and CR FEATURES • Conductive bimetal construction; the


    Original     		PDF amps/120 pepi c pepi cr bimetallic thermostat PEPI bimetal PEPI -CH pepi thermostat bimetal thermostat seamless view thermostat pepi

    0.18 um CMOS parameters

    Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
    Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors


    Original     		PDF 10-3/K] 0.18 um CMOS parameters poly silicon resistor pepi c 0.18 um CMOS technology World transistors

    IDLN100D10

    Abstract: ISO14000 100D10 pepi c ISO-14000 VTN100D10 zarlink PACKING 50x-2 Zarlink CROSS analog devices 0.8 -2.0um CMOS
    Text: 2.0 µm 5V/40V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 5V control logic 40V transistors Epi wafers Thick gate oxide State of the art double metal technology [Ti/TiN/Al/TiN sandwich] Single or double poly Hi-res poly option [10kΩ/ ]


    Original     		PDF V/40V IDLN100D10 ISO14000 100D10 pepi c ISO-14000 VTN100D10 zarlink PACKING 50x-2 Zarlink CROSS analog devices 0.8 -2.0um CMOS

    5HP ibm

    Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
    Text: IBM Microelectronics Blue Logic BiCMOS 5HP Technology SiGe BiCMOS process for high performance Highlights IBM Blue Logic BiCMOS 5HP is a unique and versatile process integrating a highperformance silicon germanium SiGe heterojunction bipolar transistor (HBT)


    Original     		PDF 07G522035300* G522-0353-00 5HP ibm 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe

    USE OF TRANSISTOR

    Abstract: pepi c thermal transistor and or IC Ultrasonic pepi testing good or bad electronic components circuit TO-220FN pn junction diode structure shin-etsu Chemical
    Text: Operation notes Transistors Operation notes zSelecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum


    Original     		PDF

    pepi c

    Abstract: 2SC4938 2SD1664 2SD1760 G746 SC101 mosfet nepi
    Text: Operation notes Transistors Operation notes !Selecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum


    Original     		PDF 2SC4938) 2SD1760) 2SD1664) pepi c 2SC4938 2SD1664 2SD1760 G746 SC101 mosfet nepi

    Untitled

    Abstract: No abstract text available
    Text: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­


    OCR Scan     		PDF 0D137Ã

    130001 power transistor

    Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M
    Text: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages


    OCR Scan     		PDF MRF426 MRF426A MRF426, 130001 power transistor transistor 130001 K1746 pepi c MRF426A VK20Q PEPI -CH 2204B 725M

    PEPI N-1

    Abstract: pepi c 0-21S SAFE33 VK20Q PEPI PEPI N
    Text: ai ^ fcb 3b 72S 4 0070=103 1 89D 78983 6 3 6 7 2 5 4 MOTOROLA SC <XSTRS/R F D 3 7 - A* MOTOROLA SEM ICO NDUCTOR MRF426 MRF426A TECHNICAL DATA The RF Line 25 W P E P )- 3 0 M H z R F POW ER T R A N S IS T O R N PN S IL IC O N N P N S IL IC O N R F POW ER T R A N S IS T O R


    OCR Scan     		PDF MRF426 MRF426A MRF426, PEPI N-1 pepi c 0-21S SAFE33 VK20Q PEPI PEPI N

    TD 6905 S

    Abstract: ci 7430 TD 6905
    Text: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >


    OCR Scan     		PDF 1000PF, CJ6-J35= 350uH SI-30103 TD 6905 S ci 7430 TD 6905

    Ta75458p cross

    Abstract: ta7545bp C12S TA75458F TA75458P
    Text: BIPO LAR LIN EA R INTEGRATED CIRCUIT SILICON MONOLITHIC TA75458P/F DUAL OPERATIONAL AMPLIFIER . Pair of Internally Compensated High Performance Amplifier . No Frequency Compensation Required . No Latch-up Short Circuit Protection . Wide Common Mode and Differential Voltage Range


    OCR Scan     		PDF TA75458P, 5458F TA75458P 125-Q0 TA75458F Ta75458p cross ta7545bp C12S TA75458F TA75458P

    MC 2882

    Abstract: 2SC2862 MC 342 transistor 210B MC 2871
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 175MHÃ MC 2882 2SC2862 MC 342 transistor 210B MC 2871

    MRF429MP

    Abstract: MRF429-MP MRF429 MRF-429
    Text: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d


    OCR Scan     		PDF MRF429 MRF429MP MRF429, MRF429MP MRF429-MP MRF-429

    c237p

    Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r


    OCR Scan     		PDF

    3B2S

    Abstract: MRF428
    Text: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power


    OCR Scan     		PDF 3b72S4 MRF428 T--33--13 3B2S MRF428

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2


    OCR Scan     		PDF 1x106 1x1014c 1x109 1x101 24-Lead HC6616/1 HC6616/2 harris 6616

    harris 6616

    Abstract: No abstract text available
    Text: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02


    OCR Scan     		PDF HC6616 1x106 1x109 1x101 24-Lead HC6616/1 pin21 HC6616/2 harris 6616

    AAF40

    Abstract: atechnology
    Text: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through


    OCR Scan     		PDF 00QGM37 HC6616 1x10i4cnr2 1x109 0x10-9 1x1012rad AAF40 atechnology

    883ct

    Abstract: No abstract text available
    Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through


    OCR Scan     		PDF HC6167 1x1014cnvz 1x109 1x101 1x10-® 20-pin 883ct

    honeywell mram

    Abstract: No abstract text available
    Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out


    OCR Scan     		PDF 0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through


    OCR Scan     		PDF HC6616 1x106 1x1014cm 1x109 harris 6616

    smd TRANSISTOR code marking 8K

    Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
    Text: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)


    OCR Scan     		PDF 1x106 1x1014N/cm2 1x109 1x101 36-Pin 28-Pin MIL-l-38535 36-LEAD 28-LEAD HC6364/1 smd TRANSISTOR code marking 8K pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N

    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


    OCR Scan     		PDF 1x10u 1x109 1x101 1x108