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    MACOM MAPD-008957-CT0012

    Signal Conditioning 1-2700MHz 2 way 0Deg. Pwr Dvdr
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    Mouser Electronics MAPD-008957-CT0012
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    TE Connectivity EPD89444A

    Conductor |Raychem Te Connectivity EPD89444A
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    Newark EPD89444A Bulk 1
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    Master Electronics EPD89444A
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    Mitsubishi Electric PD8933

    AVALANCHE PHOTO DIODE
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    Quest Components PD8933 8
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    Winchester Interconnect SRM26PD8-95F0000-4115

    CONNECTOR
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    CDM Electronics SRM26PD8-95F0000-4115
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    PD89 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PD8931 Mitsubishi 2 mA, InGaAs photodiode for optical communication Scan PDF
    PD8932 Mitsubishi InGaAs AVALANCHE PHOTO DIODES Original PDF
    PD8933 Mitsubishi InGaAs AVALANCHE PHOTO DIODES Original PDF
    PD8933 Mitsubishi InGaAs AVALANCHE PHOTO DIODE Scan PDF
    PD8933 Series Mitsubishi InGaAs AVALANCHE PHOTO DIODES Original PDF
    PD893D2 Mitsubishi Original PDF
    PD893D3 Mitsubishi Original PDF
    PD893E6 Mitsubishi Photodiode, Avalanche Module, 0.85A/W Sensitivity Original PDF

    PD89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    avalanche 1550nm photodiode 5 Ghz

    Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
    Text: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.


    Original     		PDF PD893E6 1580nm. 1580nm avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz

    photo diode

    Abstract: 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • φ35 µ m active diameter a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving


    Original     		PDF PD8933 1600nm. 1550nm photo diode 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode

    avalanche diode

    Abstract: Photo Diodes InGaAs photodiode "Photo Diodes" avalanche photodiode InGaAs avalanche photodiode ingaas ghz PD8042 Avalanche diodes ir photodiode wavelength
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8042,PD8932 DISCRIPTION FEATURES PD8XX2 is an InGaAs avalanche photodiode suitable for • Active diameter 50µm receiving the light having low noise, a wavelength band of • Low


    Original     		PDF PD8042 PD8932 1600nm. 1300nm PD8042 avalanche diode Photo Diodes InGaAs photodiode "Photo Diodes" avalanche photodiode InGaAs avalanche photodiode ingaas ghz Avalanche diodes ir photodiode wavelength

    PD8043

    Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
    Text: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.


    Original     		PDF PD8043, PD8933, PD893D3 1600nm. 1600nm PD8043 avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz

    PD8042

    Abstract: PD893D2 PD8932 PD893D
    Text: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.


    Original     		PDF PD8042, PD8932, PD893D2 1600nm. 1600nm PD8042 PD8932 PD8042 PD893D2 PD8932 PD893D

    MRC D6 16A

    Abstract: No abstract text available
    Text: Cover Marvell PXA270 Processor Developers Manual Doc. No. MV-S301039-00 , Rev. A April 2009 Marvell. Moving Forward Faster Released PXA270 Processor Developers Manual Document Conventions Note: Provides related information or information of special importance.


    Original     		PDF PXA270 MV-S301039-00 PXA270 MV-S301039-00 MRC D6 16A

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    sony ps3 eye camera

    Abstract: PXA272 ED101 transistor PXA271 PXA27x ss100 transistor NPCE 795 AF117 transistor PXA210 relays STPI 310
    Text: Intel PXA27x Processor Family Developer’s Manual January 2006 Order Number: 280000-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTELR PRODUCTS. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS


    Original     		PDF PXA27x Index-36 sony ps3 eye camera PXA272 ED101 transistor PXA271 ss100 transistor NPCE 795 AF117 transistor PXA210 relays STPI 310

    FU-456RDF

    Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		PDF 350mW 650nm 1600nm H-CT606-J KI-0807 FU-456RDF ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series

    85T03GH

    Abstract: L1085DG L1117LG C3209 transistor pc890 transistor C3795 c3746 transistor ADP3418K transistor R3907 transistor c3789
    Text: 5 4 3 2 1 P5BW-MB Revision: 1.00 - 03/29/2006 VRD 11 on Board Intel Pentium processor 133/200/266 MHz Prescott & Cedar Mill & Presler & Conroe LGA-775 Pin Socket-T D 1.2V & STANDBY REGULATOR DATA CNTL ADDR 133/200/266 MHz D 100MHz CLOCK CK-505 SSOP 96 MHz


    Original     		PDF LGA-775 CK-505 IDTCV174PVG SLG84516S 100MHz 48MHz 200/266MHz 33MHz 18MHz 85T03GH L1085DG L1117LG C3209 transistor pc890 transistor C3795 c3746 transistor ADP3418K transistor R3907 transistor c3789

    IT8500E-L

    Abstract: it8500e UP7711U8 JRST2001 EMB20N03V UP7714BMA5-00 IT8500 JMC251 parade ps8101 PCH Ibex Peak-M
    Text: 5 4 3 2 1 K42F SCHEMATIC For BOM Rev1.0 Power VCORE Page 80 System D Page 81 BLOCK DIAGRAM D 1.5VS & 1.05VS Page 82 DDR & VTT Page 83 HDMI HDMI AMD PARK-XT-S3 DDR3 800/1066MHz CPU PCIE x16 ARRANDALE +2.5VS DDR3 SO-DIMM Page 84 Page 16~18 CRT CRT LVDS Page 70


    Original     		PDF 800/1066MHz IT8500E-L 110ms 100us IT8500E-L it8500e UP7711U8 JRST2001 EMB20N03V UP7714BMA5-00 IT8500 JMC251 parade ps8101 PCH Ibex Peak-M

    650nm laser diode 200mw

    Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		PDF 350mW 650nm 1600nm H-CR606-G KI-0608 650nm laser diode 200mw FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46

    IT8500E-L

    Abstract: it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00
    Text: 5 4 SYSTEM PAGE REF. Content PAGE D C B A 1 2 3 4 5 6 7 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 36 37 38 40 41 42 43 44 45 46 47 48 50 51 52 53 56 57 60 61 Block Diagram System Setting CPU 1 _DMI,PEG,FDI,CLK,MISC CPU(2)_DDR3 CPU(3)_CFG,RSVD,GND


    Original     		PDF ICS9LPR362 IT8512 CODEC-ALC663 FM2010 R5C833 110ms 100us M60JV IT8500E-L it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00

    30h80

    Abstract: avalanche photodiodes vn09 PD80 PD8932 InGaAs photodiodes mitsubishi high speed
    Text: M IT S U B IS H I InGaAs P H O TO DIO DES PDSXX2 VîS* F O R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME S E R IE S 1=24=102^ 0014251 T EIMITS 31E D r^rm-o7 PD3002, PD8932 DESCRIPTION FEATURES The P08XX2 series are InGaAs avalanche photodiodes de­


    OCR Scan     		PDF PD8932 rr-m-07 1300nm DQ14ESS 30h80 avalanche photodiodes vn09 PD80 PD8932 InGaAs photodiodes mitsubishi high speed

    InGaAs Photodiode 1550nm

    Abstract: avalanche photodiode ingaas ghz PD893E6
    Text: MITSUBISHI ELECTRIC CORPORATION * DATE: SPECIFICATION -SHEET 1 PREPARED BY: CHECKED BY: Y.Tanaka APPROVED BY: I I I I 1 lU U r u p S Aa ro Un I I : PD893E6 1. TYPE 2. APPLICATION : OPTICAL COMMUNICATION 3. STRUCTURE : <J>20 jim InGaAs AVALANCHE PHOTODIODE


    OCR Scan     		PDF PD893E6 100jiA 1550nm, 130MHz GNOK-PD893E6 PD893E6-01 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz

    PS224

    Abstract: PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816
    Text: 41E D MIL ELECTRONICS INC blbmhM n000271 1 • ■«* 1.80 • K - “ S ttlA ■>* ^ IN lit A 1 WATTS O F ISOLATED O U TPU T POW ER • T A T r) 7 • POWER SUPPLY MODEL 1.00 - /' SINGLE O R DUAL O U TPU TS PRINTED C IR CU IT MOUNTING LESS THAN 3/4 CUBIC INCH


    OCR Scan     		PDF ps870 ps880 ps890 ps8100 pd510 pd512 pd210 pd212 pd410 pd412 PS224 PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 5 0 /im suitable for receiving the light having low noise, a wavelength band of • L o w noise


    OCR Scan     		PDF 1600nm.

    mitsubishi avalanche photodiode ingaas ghz

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode suitable for • A c tiv e diameter 50 /¿m receiving the light having low noise, a wavelength band of • L o w noise


    OCR Scan     		PDF 1600nm 1300nm mitsubishi avalanche photodiode ingaas ghz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • <t>35^m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having


    OCR Scan     		PDF 1600nm. 1550nm

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 50><m suitable for receiving the light having low noise, a wavelength band ot • L o w noise


    OCR Scan     		PDF 1600nm.

    ml976h6f

    Abstract: No abstract text available
    Text: 1 OPTICAL ELEMENTS ILASER DIODES Max. ratings Type No, Application Tc Tsto re i i*C lop Vop *P mA) (V) (nm) ODD 35 -40 to + 60 -40 to + 100 M L4XX23 LBP .5 -40 to + 60 M L4XX26 LBP 8 M L 6 X X I4 ODD M L6XX15 M L6XX16 (mWi sa 9X fdeoì Wagi tm * 2 (mA) typ


    OCR Scan     		PDF L4XX23 L601I5R ML60116R ML64116R ML60120R L61120 PD7006 PD7869 PD8933 ML7XX10 ml976h6f

    PD89

    Abstract: No abstract text available
    Text: P a s s i v Ajiacovi p o n e n t s C o ^ Æ R \ - & '\A ••.•o'.vhvf P r r r h ic t s N ew Products Frequency Range MHz Description Part No. Connectors 800-900 890-960 1700-1900 2,3,4,6 and 8-way Power dividers SMA Jack 2089 Series tr H 10-3000 10-3000


    OCR Scan     		PDF BT03-0001 BT03-0001-SL3 PD89

    PS224

    Abstract: PD515 PD516 ps235 PD245 PS890 pd845 PD215 pd26 PD814
    Text: POWER SUPPLY MODEL • 1 WATTS OF ISOLATED OUTPUT POWER • SINGLE OR DUAL OUTPUTS • PRINTED CIRCUIT MOUNTING ° LESS THAN 3/4 CUBIC INCH • PRINTED CIRCUIT MOUNTING ELECTRICAL SPECIFICATIONS Regulation for Input. .+ .5%


    OCR Scan     		PDF