Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ML7XX10 Search Results

    ML7XX10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ML7XX10 Mitsubishi Optical Communication, High power LDs for Optical Time Domain Reflectometer Original PDF
    ML7XX10 Mitsubishi InGaAsP-MQW HIGH POWER LASER DIODES Scan PDF
    ML7xx10 Series Mitsubishi InGaAsP - MQW - HIGH POWER LASER DIODES Scan PDF

    ML7XX10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    FU-456RDF

    Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		PDF 350mW 650nm 1600nm H-CT606-J KI-0807 FU-456RDF ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series

    650nm laser diode 200mw

    Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		PDF 350mW 650nm 1600nm H-CR606-G KI-0608 650nm laser diode 200mw FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46

    laser diode DVD 300mw

    Abstract: MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650 nm to 1600 nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 300 mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		PDF H-CP606-E laser diode DVD 300mw MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML7XX10 SERIES InGaAsP — MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L7XX10 w hich FEATURES s e rie s provide a are In G a A sP stable, sin g le h ig h power tra nsverse w ith em ission w a vele ngth o f 1310nm and la s e r


    OCR Scan     		PDF ML7XX10 L7XX10 1310nm ML776H10

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML7XX10 SERIES InGaAsP -M O W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L7XX10 which series provide are InGaAsP a stable, single high power transverse laser mode diodes oscillation • H ig h power Pulse 3QQmW • l3 1 0 n m typical emission wavelength


    OCR Scan     		PDF ML7XX10 L7XX10 300mW.

    1310nm otdr

    Abstract: ML7XX10 H Beam
    Text: MITSUBISHI LASER DIODES ML7XX10 SERIES InGaAsP — MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L7XX10 w hich FEATURES s e rie s provide a are In G a A sP stable, s ingle hig h power tra nsverse w ith em ission w avele ngth o f 1310nm and la s e r m ode


    OCR Scan     		PDF ML7XX10 1310nm 300mW. 300mW) 10/is 1310nm otdr H Beam

    TRA 1310

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML7XX10 S E R IE S InGaAsP — MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L7XX10 w hich FEATURES s e rie s provide a are In G a A sP stable, s ingle hig h power tra nsverse w ith em ission w avelen gth o f 1310nm and la s e r


    OCR Scan     		PDF ML7XX10 L7XX10 1310nm ML776H10 TRA 1310

    ml976h6f

    Abstract: No abstract text available
    Text: 1 OPTICAL ELEMENTS ILASER DIODES Max. ratings Type No, Application Tc Tsto re i i*C lop Vop *P mA) (V) (nm) ODD 35 -40 to + 60 -40 to + 100 M L4XX23 LBP .5 -40 to + 60 M L4XX26 LBP 8 M L 6 X X I4 ODD M L6XX15 M L6XX16 (mWi sa 9X fdeoì Wagi tm * 2 (mA) typ


    OCR Scan     		PDF L4XX23 L601I5R ML60116R ML64116R ML60120R L61120 PD7006 PD7869 PD8933 ML7XX10 ml976h6f