ICS 1210 Pressure Sensor
Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
Text: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G
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CGY2010G;
CGY2011G
CGY2010G
CGY2011G
-129uctors
SCA50
647021/1200/02/pp12
ICS 1210 Pressure Sensor
1210 pressure sensor ics
gsm transceiver
schematics for a PA amplifier
design of multi section directional coupler
gsm signal amplifier
pressure sensor sp 20
BSR14
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2SA1638
Abstract: SAW Filter 900MHz SA8025
Text: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with
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SA1638
SA1638
01-Dec-97)
2SA1638
SAW Filter 900MHz
SA8025
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
CGY2010G
MGB764
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design of multi section directional coupler
Abstract: pressure sensor sp 20 schematics for a PA amplifier CGY2020G LQFP48 PCA5075 PHP109 BAS70 BSR14 pressure sensor sp 13
Text: INTEGRATED CIRCUITS DATA SHEET CGY2020G DCS 2 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 17 Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42%
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CGY2020G
CGY2020G
SCA50
647021/1200/01/pp12
design of multi section directional coupler
pressure sensor sp 20
schematics for a PA amplifier
LQFP48
PCA5075
PHP109
BAS70
BSR14
pressure sensor sp 13
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2SA1638
Abstract: DCS1800 SA1620 SA1638 SA1638BE
Text: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with
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SA1638
SA1638
2SA1638
DCS1800
SA1620
SA1638BE
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2SA1638
Abstract: resistor var 20k DCS1800 SA1620 SA1638 SA1638BE capacitor 106 35K
Text: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with
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SA1638
SA1638
2SA1638
resistor var 20k
DCS1800
SA1620
SA1638BE
capacitor 106 35K
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%
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CGY2013G
PCA5075
SA1620.
SCA50
647021/1200/01/pp12
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET CGY2023G DCS 2 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Aug 14 Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38%
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CGY2023G
CGY2023G
simp31
SCA51
647021/1200/01/pp12
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transistor C535
Abstract: c535 transistor transistor C635 IR546 transistor C618 C644 transistor transistor c380 C645 diode c530 TRANSISTOR C535
Text: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification Supersedes data of 1996 Oct 08 IC17 Data Handbook Philips Semiconductors 1997 May 22 Philips Semiconductors Product specification Low voltage GSM front-end transceiver SA1620
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SA1620
12dBm
SA1638
SA1620
transistor C535
c535 transistor
transistor C635
IR546
transistor C618
C644 transistor
transistor c380
C645 diode
c530 TRANSISTOR
C535
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circuit diagram of pi controller using op-amp
Abstract: LTA 702 N PCA5075 SSOP20
Text: NAPC/PHILIPS SEMICOND fc,7E D • bbS3T24 QDST17H BT1 « S I C 3 Philips Semiconductors RF Communications Products Preliminary specification ■ Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER
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S3c124
PCA5075
circuit diagram of pi controller using op-amp
LTA 702 N
PCA5075
SSOP20
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PCA5075
Abstract: SSOP20
Text: PHILIPS INTERNATIONAL b?E D • ?110A2b DQbSlSO Sfil « P H I N Philips Sem iconductors RF Communications Products Preliminary specification Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER MIN. TYP. MAX. UNIT
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711002b
PCA5075
PCA5075
SSOP20
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tl 2345 ml
Abstract: C529 c528 transistor SWITCHING TRANSISTOR C144 C134 C144 C530 R546 SA1620 SA1620BE
Text: Product specification Philips Semiconductors Low voltage GSM front-end transceiver DESCRIPTION SA1620 • Feedthrough attenuation LNA1 to Rx mixer > 35dB The SA1620 is a combined receive Rx and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low
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SA1620
SA1620
950MHz
OT313-2
711Dfl2b
tl 2345 ml
C529
c528 transistor
SWITCHING TRANSISTOR C144
C134
C144
C530
R546
SA1620BE
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LQFP-48 footprint
Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
Text: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power
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PCA5075
SA1620.
CGY2010G;
CGY2011G
CGY2010G
CGY2011G
LQFP-48 footprint
schematics for a PA amplifier class c
7x7x1.4
n004
schematics for a PA amplifier
27 Mhz power amplifier
power amplifier
33PF
C5000
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gsm signal amplifier circuit diagram
Abstract: MGD629
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier
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PCA5075
SA1620.
CGY2013G
CGY2013G
MGD629
SMD0402;
SMD0603.
gsm signal amplifier circuit diagram
MGD629
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C144 TRANSISTOR RESISTOR
Abstract: SWITCHING TRANSISTOR C144 C144 SA1620 SA1620BE SA1638 LNA21 philips gmsk
Text: Philips Sem iconductors O bjective specification Low-voltage GSM front-end transceiver DESCRIPTION SA1620 • Absolute gain tolerance in the Rx path: ±2dB active mode The SA1620 is a combined receive (Rx) and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low
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SA1620
SA1620
70MHz
500MHz.
950MHz
10MHz
DCS1800TX
DCS1800
200kHz
C144 TRANSISTOR RESISTOR
SWITCHING TRANSISTOR C144
C144
SA1620BE
SA1638
LNA21
philips gmsk
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HF power amplifier
Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
PCA5075
SA1620.
711062b
HF power amplifier
ze 003 ic
CGY2010G
LQFP48
LQFP64
LQFP80
PCA5075
SA1620
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CGY2020G
Abstract: LQFP48 LQFP64 LQFP80 PCA5075 SMD0603 nrx 34
Text: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42% The CGY2020G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply.
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CGY2020G
PCA5075.
CGY2020G
711062b
0l0b037
LQFP48
LQFP64
LQFP80
PCA5075
SMD0603
nrx 34
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LNA12
Abstract: rf transmitter receiver 1800Mhz xl 1225 transistor SA1620BE c530 TRANSISTOR
Text: Philips Semiconductors Product specification Low voltage GSM front-end transceiver DESCRIPTION SA1620 • Feedthrough attenuation LNA1 to Rx mixer > 35dB The SA1620 is a combined receive {Rx and transmit Tx) front-end for GSM cellular telephones. The receive path contains two low
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SA1620
SA1620
100mA
SRQ0152
LNA12
rf transmitter receiver 1800Mhz
xl 1225 transistor
SA1620BE
c530 TRANSISTOR
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1nt02
Abstract: g110 transistor C618 C134 C144 SA1620 SA1620BE SA1638 400MHZ transceiver DSC1800
Text: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification 1995 Feb 23 IC17 Handbook Philips Semiconductors PHILIPS This Material Copyrighted By Its Respective Manufacturer PHILIPS Philips Semiconductors Product specification Low voltage GSM front-end transceiver
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SA1620
711DflSt)
SA1620
70MHz
500MHz.
711002b
TQFP48:
OT313-1
1nt02
g110
transistor C618
C134
C144
SA1620BE
SA1638
400MHZ transceiver
DSC1800
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CGY2013G
Abstract: LQFP48 PCA5075 SA1620 SMD0603
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2013G
PCA5075
SA1620.
CGY2013G
711032t
010b027
LQFP48
PCA5075
SA1620
SMD0603
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CGY2023G
Abstract: LQFP48 LQFP64 LQFP80 PCA5075
Text: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38% The CGY2023G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2023G
PCA5075.
CGY2023G
711002b
10703t
LQFP48
LQFP64
LQFP80
PCA5075
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