Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PCA5075 Search Results

    PCA5075 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PCA5075 Philips Semiconductors Power Amplifier Controller for GSM Systems Scan PDF

    PCA5075 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ICS 1210 Pressure Sensor

    Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G


    Original
    PDF CGY2010G; CGY2011G CGY2010G CGY2011G -129uctors SCA50 647021/1200/02/pp12 ICS 1210 Pressure Sensor 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14

    2SA1638

    Abstract: SAW Filter 900MHz SA8025
    Text: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with


    Original
    PDF SA1638 SA1638 01-Dec-97) 2SA1638 SAW Filter 900MHz SA8025

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip


    Original
    PDF CGY2010G CGY2010G MGB764

    design of multi section directional coupler

    Abstract: pressure sensor sp 20 schematics for a PA amplifier CGY2020G LQFP48 PCA5075 PHP109 BAS70 BSR14 pressure sensor sp 13
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2020G DCS 2 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 17 Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42%


    Original
    PDF CGY2020G CGY2020G SCA50 647021/1200/01/pp12 design of multi section directional coupler pressure sensor sp 20 schematics for a PA amplifier LQFP48 PCA5075 PHP109 BAS70 BSR14 pressure sensor sp 13

    2SA1638

    Abstract: DCS1800 SA1620 SA1638 SA1638BE
    Text: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with


    Original
    PDF SA1638 SA1638 2SA1638 DCS1800 SA1620 SA1638BE

    2SA1638

    Abstract: resistor var 20k DCS1800 SA1620 SA1638 SA1638BE capacitor 106 35K
    Text: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with


    Original
    PDF SA1638 SA1638 2SA1638 resistor var 20k DCS1800 SA1620 SA1638BE capacitor 106 35K

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%


    Original
    PDF CGY2013G PCA5075 SA1620. SCA50 647021/1200/01/pp12

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2023G DCS 2 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Aug 14 Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38%


    Original
    PDF CGY2023G CGY2023G simp31 SCA51 647021/1200/01/pp12

    transistor C535

    Abstract: c535 transistor transistor C635 IR546 transistor C618 C644 transistor transistor c380 C645 diode c530 TRANSISTOR C535
    Text: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification Supersedes data of 1996 Oct 08 IC17 Data Handbook Philips Semiconductors 1997 May 22 Philips Semiconductors Product specification Low voltage GSM front-end transceiver SA1620


    Original
    PDF SA1620 12dBm SA1638 SA1620 transistor C535 c535 transistor transistor C635 IR546 transistor C618 C644 transistor transistor c380 C645 diode c530 TRANSISTOR C535

    circuit diagram of pi controller using op-amp

    Abstract: LTA 702 N PCA5075 SSOP20
    Text: NAPC/PHILIPS SEMICOND fc,7E D • bbS3T24 QDST17H BT1 « S I C 3 Philips Semiconductors RF Communications Products Preliminary specification ■ Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER


    OCR Scan
    PDF S3c124 PCA5075 circuit diagram of pi controller using op-amp LTA 702 N PCA5075 SSOP20

    PCA5075

    Abstract: SSOP20
    Text: PHILIPS INTERNATIONAL b?E D • ?110A2b DQbSlSO Sfil « P H I N Philips Sem iconductors RF Communications Products Preliminary specification Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER MIN. TYP. MAX. UNIT


    OCR Scan
    PDF 711002b PCA5075 PCA5075 SSOP20

    tl 2345 ml

    Abstract: C529 c528 transistor SWITCHING TRANSISTOR C144 C134 C144 C530 R546 SA1620 SA1620BE
    Text: Product specification Philips Semiconductors Low voltage GSM front-end transceiver DESCRIPTION SA1620 • Feedthrough attenuation LNA1 to Rx mixer > 35dB The SA1620 is a combined receive Rx and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low


    OCR Scan
    PDF SA1620 SA1620 950MHz OT313-2 711Dfl2b tl 2345 ml C529 c528 transistor SWITCHING TRANSISTOR C144 C134 C144 C530 R546 SA1620BE

    LQFP-48 footprint

    Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power


    OCR Scan
    PDF PCA5075 SA1620. CGY2010G; CGY2011G CGY2010G CGY2011G LQFP-48 footprint schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000

    gsm signal amplifier circuit diagram

    Abstract: MGD629
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier


    OCR Scan
    PDF PCA5075 SA1620. CGY2013G CGY2013G MGD629 SMD0402; SMD0603. gsm signal amplifier circuit diagram MGD629

    C144 TRANSISTOR RESISTOR

    Abstract: SWITCHING TRANSISTOR C144 C144 SA1620 SA1620BE SA1638 LNA21 philips gmsk
    Text: Philips Sem iconductors O bjective specification Low-voltage GSM front-end transceiver DESCRIPTION SA1620 • Absolute gain tolerance in the Rx path: ±2dB active mode The SA1620 is a combined receive (Rx) and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low


    OCR Scan
    PDF SA1620 SA1620 70MHz 500MHz. 950MHz 10MHz DCS1800TX DCS1800 200kHz C144 TRANSISTOR RESISTOR SWITCHING TRANSISTOR C144 C144 SA1620BE SA1638 LNA21 philips gmsk

    HF power amplifier

    Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip


    OCR Scan
    PDF CGY2010G PCA5075 SA1620. 711062b HF power amplifier ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620

    CGY2020G

    Abstract: LQFP48 LQFP64 LQFP80 PCA5075 SMD0603 nrx 34
    Text: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42% The CGY2020G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply.


    OCR Scan
    PDF CGY2020G PCA5075. CGY2020G 711062b 0l0b037 LQFP48 LQFP64 LQFP80 PCA5075 SMD0603 nrx 34

    LNA12

    Abstract: rf transmitter receiver 1800Mhz xl 1225 transistor SA1620BE c530 TRANSISTOR
    Text: Philips Semiconductors Product specification Low voltage GSM front-end transceiver DESCRIPTION SA1620 • Feedthrough attenuation LNA1 to Rx mixer > 35dB The SA1620 is a combined receive {Rx and transmit Tx) front-end for GSM cellular telephones. The receive path contains two low


    OCR Scan
    PDF SA1620 SA1620 100mA SRQ0152 LNA12 rf transmitter receiver 1800Mhz xl 1225 transistor SA1620BE c530 TRANSISTOR

    1nt02

    Abstract: g110 transistor C618 C134 C144 SA1620 SA1620BE SA1638 400MHZ transceiver DSC1800
    Text: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification 1995 Feb 23 IC17 Handbook Philips Semiconductors PHILIPS This Material Copyrighted By Its Respective Manufacturer PHILIPS Philips Semiconductors Product specification Low voltage GSM front-end transceiver


    OCR Scan
    PDF SA1620 711DflSt) SA1620 70MHz 500MHz. 711002b TQFP48: OT313-1 1nt02 g110 transistor C618 C134 C144 SA1620BE SA1638 400MHZ transceiver DSC1800

    CGY2013G

    Abstract: LQFP48 PCA5075 SA1620 SMD0603
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.


    OCR Scan
    PDF CGY2013G PCA5075 SA1620. CGY2013G 711032t 010b027 LQFP48 PCA5075 SA1620 SMD0603

    CGY2023G

    Abstract: LQFP48 LQFP64 LQFP80 PCA5075
    Text: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38% The CGY2023G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.


    OCR Scan
    PDF CGY2023G PCA5075. CGY2023G 711002b 10703t LQFP48 LQFP64 LQFP80 PCA5075