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    2SK1103

    Abstract: XN1D873
    Text: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter


    Original     		PDF XN1D873 2SK1103 2SK1103 XN1D873

    UN1210

    Abstract: XN1210
    Text: Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings 1 : Collector Tr1 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings


    Original     		PDF XN1210 UN1210 UN1210 XN1210

    UN1112

    Abstract: UN1212 XN1A312
    Text: Composite Transistors XN1A312 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 ● Parameter (Ta=25˚C) Ratings Unit Collector to base voltage


    Original     		PDF XN1A312 UN1212 UN1112 UN1112 XN1A312

    UN1210

    Abstract: UNR1210 XN01210 XN1210
    Text: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit


    Original     		PDF XN01210 XN1210) UNR1210 UN1210) UN1210 XN01210 XN1210

    2SB709A

    Abstract: 2SD601A XN1601
    Text: Composite Transistors XN1601 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 3 0.65±0.15 1 2 0 to 0.1 2SB709A+2SD601A +0.1 +0.2 1.1 -0.1 ● 0.8


    Original     		PDF XN1601 2SB709A 2SD601A 2SD601A XN1601

    TRANSISTOR C 460

    Abstract: 2SB709A 2SD601A XN1B301
    Text: Composite Transistors XN1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 2 : Collector (Tr2)


    Original     		PDF XN1B301 2SB709A 2SD601A TRANSISTOR C 460 2SD601A XN1B301

    2SB709A

    Abstract: 2SD601A XN1C301
    Text: Composite Transistors XN1C301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 2 : Collector (Tr2)


    Original     		PDF XN1C301 2SB709A 2SD601A 2SD601A XN1C301

    UN111H

    Abstract: XN111H
    Text: Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN111H x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN111H UN111H UN111H XN111H

    2SD814

    Abstract: XN1507
    Text: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1507 2SD814 2SD814 XN1507

    9s MARKING

    Abstract: UN1111 XN1111
    Text: Composite Transistors XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1111 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1111 UN1111 9s MARKING UN1111 XN1111

    XN1216

    Abstract: UN1216
    Text: Composite Transistors XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1216 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1216 UN1216 XN1216 UN1216

    UN1110

    Abstract: XN1110
    Text: Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1110 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1110 UN1110 UN1110 XN1110

    UN1212

    Abstract: XN1212 SC74A EIAJ-SC74A
    Text: Composite Transistors XN1212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1212 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1212 UN1212 UN1212 XN1212 SC74A EIAJ-SC74A

    UN1210

    Abstract: XN2210
    Text: Composite Transistors XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1210 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN2210 UN1210 UN1210 XN2210

    UN1212

    Abstract: XN2212
    Text: Composite Transistors XN2212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1212 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN2212 UN1212 UN1212 XN2212

    UN1211

    Abstract: XN2211
    Text: Composite Transistors XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN2211 UN1211 UN1211 XN2211

    UN1217

    Abstract: XN1217 9p marking
    Text: Composite Transistors XN1217 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1217 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1217 UN1217 UN1217 XN1217 9p marking

    XN1211

    Abstract: UN1211
    Text: Composite Transistors XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1211 UN1211 XN1211 UN1211

    UN1215

    Abstract: XN1215
    Text: Composite Transistors XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1215 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1215 UN1215 UN1215 XN1215

    2SC4561

    Abstract: XN1509 4600ic
    Text: Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC4561 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1509 2SC4561 2SC4561 XN1509 4600ic

    UN1112

    Abstract: XN1112
    Text: Composite Transistors XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1112 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1112 UN1112 UN1112 XN1112

    2SK621

    Abstract: XN1872
    Text: Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK621 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06 +0.1


    Original     		PDF XN1872 2SK621 2SK621 XN1872

    UN1115

    Abstract: XN1115
    Text: Composite Transistors XN1115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1115 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1115 UN1115 UN1115 XN1115

    UN1216

    Abstract: XN2216
    Text: Composite Transistors XN2216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1216 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN2216 UN1216 UN1216 XN2216