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    VENKEL LTD HPTF1210-UN-1210DT

    High Power Thin Film CR;1210;1/3W;�10PPM;121R;�0.5%
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    Venkel Ltd. HPTF1210-UN-1210DT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF2010-UN-1210DT

    High Power Thin Film CR;2010;1/3W;�10PPM;121R;�0.5%
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    Venkel Ltd. HPTF2010-UN-1210DT Reel 5 Weeks, 5 Days 4,000
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    VENKEL LTD HPTF2010-UN-1210CT

    High Power Thin Film CR;2010;1/3W;�10PPM;121R;�0.25%
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    Venkel Ltd. HPTF2010-UN-1210CT Reel 5 Weeks, 5 Days 4,000
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    VENKEL LTD HPTF2010-UN-1210UT

    High Power Thin Film CR;2010;1/3W;�10PPM;121R;�0.01%
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    Venkel Ltd. HPTF2010-UN-1210UT Reel 5 Weeks, 5 Days 4,000
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    VENKEL LTD HPTF2010-UN-1210FT

    High Power Thin Film CR;2010;1/3W;�10PPM;121R;�1%
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    Venkel Ltd. HPTF2010-UN-1210FT Reel 5 Weeks, 5 Days 4,000
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    UN1210 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN1210 Panasonic Silicon NPN Transistor with integrated resistor Original PDF
    UN1210 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN1210 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN1210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    UN1210Q Panasonic TRANS GP BJT NPN 50V 0.1A 3M Original PDF
    UN1210-Q Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN1210R Panasonic TRANS GP BJT NPN 50V 0.1A 3M Original PDF
    UN1210-R Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN1210S Panasonic TRANS GP BJT NPN 50V 0.1A 3M Original PDF
    UN1210-S Panasonic Silicon NPN epitaxial planer transistor Original PDF

    UN1210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN1210

    Abstract: XN2210
    Text: Composite Transistors XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1210 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN2210 UN1210 UN1210 XN2210

    UN1210

    Abstract: XP1210
    Text: Composite Transistors XP1210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1210 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element ■ Absolute Maximum Ratings


    Original     		PDF XP1210 UN1210 UN1210 XP1210

    XP2210

    Abstract: UN1210
    Text: Composite Transistors XP2210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1210 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


    Original     		PDF XP2210 UN1210 XP2210 UN1210

    UN1210

    Abstract: UNR1210 XP06210 XP6210
    Text: Composite Transistors XP06210 XP6210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1


    Original     		PDF XP06210 XP6210) UNR1210 UN1210) UN1210 XP06210 XP6210

    UN1210

    Abstract: UNR1210 XP04210 XP4210 panasonic VF-8Z
    Text: Composite Transistors XP04210 XP4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XP04210 XP4210) UNR1210 UN1210) UN1210 XP04210 XP4210 panasonic VF-8Z

    UN1210

    Abstract: UNR1210 XP02210 XP2210
    Text: Composite Transistors XP02210 XP2210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1210(UN1210) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP02210 XP2210) UNR1210 UN1210) UN1210 XP02210 XP2210

    UN1210

    Abstract: XP4210
    Text: Composite Transistors XP4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1210 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage


    Original     		PDF XP4210 UN1210 UN1210 XP4210

    UN1210

    Abstract: UNR1210 XN02210 XN2210
    Text: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1210(UN1210) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN02210 XN2210) UNR1210 UN1210) UN1210 XN02210 XN2210

    UN1210

    Abstract: XP6210
    Text: Composite Transistors XP6210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UN1210 x 2 elements 0 to 0.1 ● 0.12 –0.02 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP6210 UN1210 UN1210 XP6210

    UN1210

    Abstract: UNR1210 XP01210 XP1210
    Text: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.7±0.1


    Original     		PDF XP01210 XP1210) UNR1210 UN1210) UN1210 XP01210 XP1210

    XN421

    Abstract: UN1210 UNR1210 XN04210 XN4210 panasonic VF-8Z
    Text: Composite Transistors XN04210 XN4210 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6


    Original     		PDF XN04210 XN4210) UNR1210 UN1210) XN421 UN1210 XN04210 XN4210 panasonic VF-8Z

    UN1210

    Abstract: UNR1210 XN01210 XN1210
    Text: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit


    Original     		PDF XN01210 XN1210) UNR1210 UN1210) UN1210 XN01210 XN1210

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ


    Original     		PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    UN1210

    Abstract: XN4210
    Text: Composite Transistors XN4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 +0.1 +0.1 0 to 0.05 0.4±0.2 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage


    Original     		PDF XN4210 UN1210 XN4210

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR121x UN121x UNR1210 UNR1211 UNR1212 UNR1213

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 4 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN02210 XN2210) UNR1210 UN1210)

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    UN1210

    Abstract: XN1210
    Text: Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings 1 : Collector Tr1 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings


    Original     		PDF XN1210 UN1210 UN1210 XN1210

    UN1210

    Abstract: UNR1210 XP01210 XP1210
    Text: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP01210 XP1210) UNR1210 UN1210) UN1210 XP01210 XP1210

    UN1212

    Abstract: UN1219 UN1210 UN1211 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 1.25±0.05 0.45±0.05 • Resistance by Part Number


    Original     		PDF 121D/121E/121F/121K/121L UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN1212 UN1219 UN1210 UN1211 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218

    UN1210

    Abstract: UNR1210 XN02210 XN2210
    Text: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 1.50+0.25 –0.05 5 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor)


    Original     		PDF XN02210 XN2210) UN1210 UNR1210 XN02210 XN2210

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


    OCR Scan     		PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211

    UN1219

    Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
    Text: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10


    OCR Scan     		PDF UN921E UN921F UN921K UN921L UN1110 UN1111 UN1213 10K/47K UNI114 UN1214 UN1219 12Z2 UN1113 UN1115

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202