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    VENKEL LTD HPTF1210-UN-1211DT

    High Power Thin Film CR;1210;1/3W;�10PPM;1.21K;�0.5%
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    Venkel Ltd. HPTF1210-UN-1211DT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF2010-UN-1211DT

    High Power Thin Film CR;2010;1/3W;�10PPM;1.21K;�0.5%
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    Venkel Ltd. HPTF2010-UN-1211DT Reel 5 Weeks, 5 Days 4,000
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    VENKEL LTD HPTF1210-UN-1211CT

    High Power Thin Film CR;1210;1/3W;�10PPM;1.21K;�0.25%
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    Venkel Ltd. HPTF1210-UN-1211CT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF2010-UN-1211CT

    High Power Thin Film CR;2010;1/3W;�10PPM;1.21K;�0.25%
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    Venkel Ltd. HPTF2010-UN-1211CT Reel 5 Weeks, 5 Days 4,000
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    VENKEL LTD HPTF2010-UN-1211UT

    High Power Thin Film CR;2010;1/3W;�10PPM;1.21K;�0.01%
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    Venkel Ltd. HPTF2010-UN-1211UT Reel 5 Weeks, 5 Days 4,000
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    UN1211 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UN1211 Panasonic Silicon NPN Transistor with integrated resistor Original PDF
    UN1211 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN1211 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN1211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    UN1211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UNR1218

    Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1218 UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214

    UN1211

    Abstract: XN2211
    Text: Composite Transistors XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN2211 UN1211 UN1211 XN2211

    XN1211

    Abstract: UN1211
    Text: Composite Transistors XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1211 UN1211 XN1211 UN1211

    5 pin IC 7z

    Abstract: UN1211 XP6211
    Text: Composite Transistors XP6211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1211 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings


    Original     		PDF XP6211 UN1211 5 pin IC 7z UN1211 XP6211

    121f

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) 121f UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    UN1211

    Abstract: UNR1211 XP04211 XP4211
    Text: Composite Transistors XP04211 XP4211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XP04211 XP4211) UNR1211 UN1211) UN1211 XP04211 XP4211

    UN1111

    Abstract: UN1211 UNR1111 UNR1211 XP03311
    Text: Composite Transistors XP03311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1211(UN1211)+UNR1111(UN1111) • Absolute Maximum Ratings Parameter


    Original     		PDF XP03311 UNR1211 UN1211) UNR1111 UN1111) UN1111 UN1211 XP03311

    UN1211

    Abstract: UNR1211 XP06211 XP6211
    Text: Composite Transistors XP06211 XP6211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter


    Original     		PDF XP06211 XP6211) UNR1211 UN1211) UN1211 XP06211 XP6211

    UN1111

    Abstract: UN1211 UNR1111 UNR1211 XP04311 XP4311
    Text: Composite Transistors XP04311 XP4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) + UNR1111(UN1111) • Absolute Maximum Ratings Parameter


    Original     		PDF XP04311 XP4311) UNR1211 UN1211) UNR1111 UN1111) UN1111 UN1211 XP04311 XP4311

    UN1211

    Abstract: UNR1211 XN01211 XN1211
    Text: Composite Transistors XN01211 XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1211(UN1211) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01211 XN1211) UNR1211 UN1211) UN1211 XN01211 XN1211

    UN1211

    Abstract: UNR1211 XP01211 XP1211
    Text: Composite Transistors XP01211 XP1211 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1211(UN1211) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP01211 XP1211) UNR1211 UN1211) UN1211 XP01211 XP1211

    UN1211

    Abstract: UNR1211 XP02211 XP2211
    Text: Composite Transistors XP02211 XP2211 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1211(UN1211) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP02211 XP2211) UNR1211 UN1211) UN1211 XP02211 XP2211

    UN1212

    Abstract: UN1219 UN1210 UN1211 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 1.25±0.05 0.45±0.05 • Resistance by Part Number


    Original     		PDF 121D/121E/121F/121K/121L UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN1212 UN1219 UN1210 UN1211 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218

    XP4311

    Abstract: UN1111 UN1211
    Text: Composite Transistors XP4311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1211+UN1111 • Absolute Maximum Ratings Parameter (Ta=25˚C) Ratings Unit Collector to base voltage


    Original     		PDF XP4311 UN1211 UN1111 XP4311 UN1111

    XN1211

    Abstract: UN1211 UNR1211 XN01211
    Text: Composite Transistors XN01211 XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1211(UN1211) x 2 elements


    Original     		PDF XN01211 XN1211) UNR1211 UN1211) XN1211 UN1211 XN01211

    UN1211

    Abstract: XP2211
    Text: Composite Transistors XP2211 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1211 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


    Original     		PDF XP2211 UN1211 UN1211 XP2211

    UN1211

    Abstract: UNR1211 XN02211 XN2211
    Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1211(UN1211) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN02211 XN2211) UNR1211 UN1211) UN1211 XN02211 XN2211

    121F

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 121F UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    XP4211

    Abstract: UN1211
    Text: Composite Transistors XP4211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1211 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage


    Original     		PDF XP4211 UN1211 XP4211 UN1211

    UN1111

    Abstract: UN1211 XP03311
    Text: Composite Transistors XP03311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UN1211+UN1111 • Absolute Maximum Ratings Parameter 1 : Emitter(Tr1)


    Original     		PDF XP03311 UN1211 UN1111 UN1111 XP03311

    UN1211

    Abstract: UNR1211 XN02211 XN2211
    Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1211(UN1211) x 2 elements


    Original     		PDF XN02211 XN2211) UNR1211 UN1211) UN1211 XN02211 XN2211

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 5 2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XN02211 XN2211) UNR1211 UN1211)

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ


    Original     		PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    UN1211

    Abstract: XN4211
    Text: Composite Transistors XN4211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating Collector to emitter voltage of element Collector current +0.1 +0.1 Ta=25˚C Symbol Ratings


    Original     		PDF XN4211 UN1211 XN4211