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    P3503QVG Search Results

    P3503QVG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P3503QVG Niko Semiconductor N- and P-Channel Enhancement FET Original PDF

    P3503QVG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SEM 2004

    Abstract: P3503QVG NIKO-SEM p3503 Field Effect Transistor Niko Semiconductor nikos
    Text: NIKO-SEM P3503QVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 25mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		P3503QVG OCT-08-2004 SEM 2004 P3503QVG NIKO-SEM p3503 Field Effect Transistor Niko Semiconductor nikos PDF

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34605AA-N •概要 ■特長 ELM34605AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


    Original     		ELM34605AA-N -55Id P3503QVG OCT-08-2004 PDF

    复合

    Abstract: ELM34605AA
    Text: 复合沟道 MOSFET ELM34605AA-N •概要 ■特点 ELM34605AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 25mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)


    Original     		ELM34605AA-N FieldELM34605AA-N P3503QVG OCT-08-2004 复合 ELM34605AA PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34605AA-N •General Description ■Features ELM34605AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)


    Original     		ELM34605AA-N ELM34605AA-N FieldELM34605AA-N P3503QVG OCT-08-2004 PDF

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G PDF

    nikos

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34605AA-N •General Description ■Features ELM34605AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)


    Original     		ELM34605AA-N ELM34605AA-N FieldELM34605AA-N P3503QVG OCT-08-2004 nikos PDF