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    P2103NVG Search Results

    P2103NVG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P2103NVG Niko Semiconductor N- & P-Channel Enhancement Mode Field Effect Transistor Original PDF

    P2103NVG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P2103NVG

    Abstract: P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor
    Text: NIKO-SEM P2103NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P2103NVG MAY-21-2004 P2103NVG P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    复合

    Abstract: ELM34601AA
    Text: 复合沟道 MOSFET ELM34601AA-N •概要 ■特点 ELM34601AA-N 是低输入电容低工 作电压、低导通电阻的大电流 MOSFET。 N 沟道 •Vds=30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 21mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)


    Original     		PDF ELM34601AA-N P2103NVG MAY-21-2004 复合 ELM34601AA

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		PDF ELM34601AA-N ELM34601AA-N P2103NVG MAY-21-2004

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


    Original     		PDF ELM34601AA-N P2103NVG MAY-21-2004