Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)
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ELM34411AA-N
ELM34411AA-N
Therm100
P1403EVG
JAN-17-2006
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APW7141
Abstract: KAV60 LA-5141P KAV60 LS-5143P kb926 jlvds1 kav60 LA 5141P KB926D ISL6251 sis412 apl5607ki
Text: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document
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DAZ08400100
KAV60
LA-5141P
LS-5141P/5142P/5143P
DA60000BO10
DA20000FM10
LS-5141P
DA60000BU10
LS-5142P
APW7141
KAV60 LA-5141P
LS-5143P
kb926
jlvds1 kav60 LA 5141P
KB926D
ISL6251
sis412
apl5607ki
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KB926
Abstract: LA-4781P ALC272X ISL6251 AR8132 KAV10 RTS5159 2N7002DW SLG8SP556VTR FBMA-L11-201209-221LMA30T
Text: A B C D E 1 1 Compal Confidential 2 2 KAV10 Schematics Document Intel Diamondville Processor with Calistoga 945GSE + DDRII + ICH7M 2008-12-30 3 3 REV: 1.0 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/8/18
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KAV10
945GSE)
A4781
KB926
LA-4781P
ALC272X
ISL6251
AR8132
RTS5159
2N7002DW
SLG8SP556VTR
FBMA-L11-201209-221LMA30T
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kav60 la-5141p
Abstract: APW7141 KAV60 APL3510B LS-5143P LA-5141P jlvds1 kav60 LA 5141P KB926D APL5607KI-TRG APL5607
Text: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document
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PDF
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DAZ08400100
KAV60
LA-5141P
LS-5141P/5142P/5143P
DA60000BO10
DA20000FM10
LS-5141P
DA60000BU10
LS-5142P
kav60 la-5141p
APW7141
APL3510B
LS-5143P
jlvds1 kav60 LA 5141P
KB926D
APL5607KI-TRG
APL5607
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)
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ELM34411AA-N
ELM34411AA-N
P1403EVG
JAN-17-2006
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P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
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O-263
P45N02LSG
P45N03LTG
P75N02LSG
P75N02LTG
P0903BSG
P0903BTG
P3055LSG
P3055LTG
P50N03LSG
P70N02LDG
p0603bdg
P60N03LDG
PA102FDG
P2503NPG
P45N02LDG
P0603BD
P1703BDG
P0403BDG
P3004ND5G
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SLG8SP556VTR
Abstract: KB926Qf KAV10 LA 4781P p1403evg p1403ev RTS5159 KB926 FCBGA998 AR8132 OZ813LN
Text: A B C D E 1 1 Compal Confidential 2 2 KAV10 Schematics Document Intel Diamondville Processor with Calistoga 945GSE + DDRII + ICH7M 2009-01-21 3 3 REV: 1.0 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/8/18
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KAV10
945GSE)
A4781
SLG8SP556VTR
KB926Qf
KAV10 LA 4781P
p1403evg
p1403ev
RTS5159
KB926
FCBGA998
AR8132
OZ813LN
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KB926
Abstract: QG82945GSE 7A25000012 RTL8103EL 8103EL LA-5241P RTS5159 Compal Electronics KB926D FBMA-L11-201209-221LMA30T
Text: A B C D E ZZZ1 PCB 1 1 PJP1 45@ DCIN Compal Confidential 2 2 KTV00 Schematics Document Intel Diamondville Processor with Calistoga 945GSE + DDRII + ICH7M 3 3 2009-05-07 REV: 1.0 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2006/08/18
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KTV00
945GSE)
LA-5241P
KB926
QG82945GSE
7A25000012
RTL8103EL
8103EL
LA-5241P
RTS5159
Compal Electronics
KB926D
FBMA-L11-201209-221LMA30T
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Untitled
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM34411AA-N •概要 ■特長 ELM34411AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 14mΩ (Vgs=-10V) ・ Rds(on) < 22mΩ (Vgs=-4.5V)
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ELM34411AA-N
P1403EVG
JAN-17-2006
ModeELM34411AA-N
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ELM34411AA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM34411AA-N •概要 ■特点 ELM34411AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-12A ·Rds on < 14mΩ (Vgs=-10V) ·Rds(on) < 22mΩ (Vgs=-4.5V) ■绝对最大额定值
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ELM34411AA-N
4411AA-N
P1403EVG
JAN-17-2006
ELM34411AA
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