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    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)


    Original     		PDF ELM34411AA-N ELM34411AA-N Therm100 P1403EVG JAN-17-2006

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)


    Original     		PDF ELM34411AA-N ELM34411AA-N P1403EVG JAN-17-2006

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM34411AA-N •概要 ■特長 ELM34411AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 14mΩ (Vgs=-10V) ・ Rds(on) < 22mΩ (Vgs=-4.5V)


    Original     		PDF ELM34411AA-N P1403EVG JAN-17-2006 ModeELM34411AA-N

    ELM34411AA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM34411AA-N •概要 ■特点 ELM34411AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-12A ·Rds on < 14mΩ (Vgs=-10V) ·Rds(on) < 22mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM34411AA-N 4411AA-N P1403EVG JAN-17-2006 ELM34411AA